@Article{Cherednichenko_etal2007,
author="Cherednichenko, S.
and Drakinskiy, V.
and Baubert, J.
and Krieg, J-M
and Voronov, B.
and Gol{\textquoteright}tsman, G.
and Desmaris, V.",
title="Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5~$\mu$m Si$_{3}$N$_{4}$~/~SiO$_{2}$ membranes",
journal="J. Appl. Phys.",
year="2007",
volume="101",
number="12",
pages="124508 (1 to 6)",
optkeywords="HEB; mixer; membrane",
abstract="The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6--0.9 GHz for mixers on 1.5 $\mu$m Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=560), last updated on Sun, 16 May 2021 15:11:40 -0500",
issn="0021-8979",
doi="10.1063/1.2749302",
opturl="https://aip.scitation.org/doi/abs/10.1063/1.2749302",
opturl="https://doi.org/10.1063/1.2749302"
}