%0 Journal Article
%T Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si[sub:3]N[sub:4] / SiO[sub:2] membranes
%A Cherednichenko, S.
%A Drakinskiy, V.
%A Baubert, J.
%A Krieg, J-M
%A Voronov, B.
%A Gol'tsman, G.
%A Desmaris, V.
%J J. Appl. Phys.
%D 2007
%V 101
%N 12
%@ 0021-8979
%F Cherednichenko_etal2007
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=560), last updated on Sun, 16 May 2021 15:11:40 -0500
%X The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
%K HEB
%K mixer
%K membrane
%R 10.1063/1.2749302
%U https://aip.scitation.org/doi/abs/10.1063/1.2749302
%U https://doi.org/10.1063/1.2749302
%P 124508 (1 to 6)