PT Journal
AU Cherednichenko, S
   Drakinskiy, V
   Baubert, J
   Krieg, J
   Voronov, B
   Gol'tsman, G
   Desmaris, V
TI Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si[sub:3]N[sub:4] / SiO[sub:2] membranes
SO J. Appl. Phys.
JI J. Appl. Phys.
PY 2007
BP 124508 (1 to 6)
VL 101
IS 12
DI 10.1063/1.2749302
DE HEB; mixer; membrane
AB The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
ER