TY  - JOUR
AU  - Cherednichenko, S.
AU  - Drakinskiy, V.
AU  - Baubert, J.
AU  - Krieg, J-M
AU  - Voronov, B.
AU  - Gol'tsman, G.
AU  - Desmaris, V.
PY  - 2007
DA  - 2007//
TI  - Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si[sub:3]N[sub:4] / SiO[sub:2] membranes
T2  - J. Appl. Phys.
JO  - J. Appl. Phys.
SP  - 124508 (1 to 6)
VL  - 101
IS  - 12
KW  - HEB
KW  - mixer
KW  - membrane
AB  - The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach.
SN  - 0021-8979
UR  - https://aip.scitation.org/doi/abs/10.1063/1.2749302
UR  - https://doi.org/10.1063/1.2749302
DO  - 10.1063/1.2749302
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=560), last updated on Sun, 16 May 2021 15:11:40 -0500
ID  - Cherednichenko_etal2007
ER  -