@Article{Ryabchun_etal2009,
author="Ryabchun, S. A.
and Tretyakov, I. V.
and Pentin, I. V.
and Kaurova, N. S.
and Seleznev, V. A.
and Voronov, B. M.
and Finkel, M. I.
and Maslennikov, S. N.
and Gol{\textquoteright}tsman, G. N.",
title="Low-noise wide-band hot-electron bolometer mixer based on an NbN film",
journal="Radiophys. Quant. Electron.",
year="2009",
volume="52",
number="8",
pages="576--582",
optkeywords="HEB mixer; in-situ contacts; noise temperature; conversion gain bandwidth; diffusion cooling channel",
abstract="We develop and study a hot-electron bolometer mixer made of a two-layer NbN--Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 $\mu$m long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=599), last updated on Thu, 02 Jun 2016 17:35:31 -0500",
doi="10.1007/s11141-010-9162-7",
opturl="https://doi.org/10.1007/s11141-010-9162-7"
}