%0 Journal Article
%T Low-noise wide-band hot-electron bolometer mixer based on an NbN film
%A Ryabchun, S. A.
%A Tretyakov, I. V.
%A Pentin, I. V.
%A Kaurova, N. S.
%A Seleznev, V. A.
%A Voronov, B. M.
%A Finkel, M. I.
%A Maslennikov, S. N.
%A Gol'tsman, G. N.
%J Radiophys. Quant. Electron.
%D 2009
%V 52
%N 8
%F Ryabchun_etal2009
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=599), last updated on Thu, 02 Jun 2016 17:35:31 -0500
%X We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
%K HEB mixer
%K in-situ contacts
%K noise temperature
%K conversion gain bandwidth
%K diffusion cooling channel
%R 10.1007/s11141-010-9162-7
%U https://doi.org/10.1007/s11141-010-9162-7
%P 576-582