TY  - JOUR
AU  - Ryabchun, S. A.
AU  - Tretyakov, I. V.
AU  - Pentin, I. V.
AU  - Kaurova, N. S.
AU  - Seleznev, V. A.
AU  - Voronov, B. M.
AU  - Finkel, M. I.
AU  - Maslennikov, S. N.
AU  - Gol'tsman, G. N.
PY  - 2009
DA  - 2009//
TI  - Low-noise wide-band hot-electron bolometer mixer based on an NbN film
JO  - Radiophys. Quant. Electron.
SP  - 576
EP  - 582
VL  - 52
IS  - 8
KW  - HEB mixer
KW  - in-situ contacts
KW  - noise temperature
KW  - conversion gain bandwidth
KW  - diffusion cooling channel
AB  - We develop and study a hot-electron bolometer mixer made of a two-layer NbN–Au film in situ deposited on a silicon substrate. The double-sideband noise temperature of the mixer is 750 K at a frequency of 2.5 THz. The conversion efficiency measurements show that at the superconducting transition temperature, the intermediate-frequency bandwidth amounts to about 6.5 GHz for a mixer 0.112 μm long. These record-breaking characteristics are attributed to the improved contacts between a sensitive element and a helical antenna and are reached due to using the in situ deposition of NbN and Au layers at certain stages of the process.
UR  - https://doi.org/10.1007/s11141-010-9162-7
DO  - 10.1007/s11141-010-9162-7
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=599), last updated on Thu, 02 Jun 2016 17:35:31 -0500
ID  - Ryabchun_etal2009
ER  -