%0 Conference Proceedings
%T Development of SIS mixers for SMA 400-520 GHz band
%A Li, Chao-Te
%A Chen, Tse-Jun
%A Ni, Tong-Liang
%A Lu, Wei-Chun
%A Chiu, Chuang-Ping
%A Chen, Chong-Wen
%A Chang, Yung-Chin
%A Wang, Ming-Jye Shi
%S Proc. 20[super:th] Int. Symp. Space Terahertz Technol.
%D 2009
%F Li_etal2009
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=617), last updated on Fri, 21 May 2021 14:08:38 -0500
%X SIS junction mixers were developed for SMA 400-520 GHz band. The results show receiver noise temperature around 100 K across the band, with noise contribution from RF loss and IF estimated to be around 50 K and 20K, respectively. Two schemes were used to tune out junction's parasitic capacitance. When a parallel inductor is employed, the input impedance is close to Rn, which facilitates impedance matching between the junction and the waveguide probe. Waveguide probes were designed to achieve a low feed-point impedance to match to the junction resistance. Optimum embedding impedances for lower receiver noise temperature were investigated. Performances of two schemes and composition of receiver noise were also discussed.
%K SIS mixer
%K noise temperature
%K SMA
%P 24-30