PT Unknown
AU Li, C
   Chen, T
   Ni, T
   Lu, W
   Chiu, C
   Chen, C
   Chang, Y
   Wang, MS
TI Development of SIS mixers for SMA 400-520 GHz band
SE Proc. 20[super:th] Int. Symp. Space Terahertz Technol.
PY 2009
BP 24
EP 30
DE SIS mixer; noise temperature; SMA
AB SIS junction mixers were developed for SMA 400-520 GHz band. The results show receiver noise temperature around 100 K across the band, with noise contribution from RF loss and IF estimated to be around 50 K and 20K, respectively. Two schemes were used to tune out junction's parasitic capacitance. When a parallel inductor is employed, the input impedance is close to Rn, which facilitates impedance matching between the junction and the waveguide probe. Waveguide probes were designed to achieve a low feed-point impedance to match to the junction resistance. Optimum embedding impedances for lower receiver noise temperature were investigated. Performances of two schemes and composition of receiver noise were also discussed.
ER