@Article{Shah_etal1985,
author="Shah, Jagdeep
and Pinczuk, A.
and Gossard, A. C.
and Wiegmann, W.",
title="Energy-loss rates for hot electrons and holes in GaAs quantum wells",
journal="Phys. Rev. Lett.",
year="1985",
volume="54",
pages="2045--2048",
optkeywords="2DEG; GaAs/AlGaAs; heat flow; electron-phonon; hole-phonon; carrier-phonon; interactions",
abstract="We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=633), last updated on Mon, 24 May 2021 14:34:18 -0500"
}