%0 Journal Article
%T Energy-loss rates for hot electrons and holes in GaAs quantum wells
%A Shah, Jagdeep
%A Pinczuk, A.
%A Gossard, A. C.
%A Wiegmann, W.
%J Phys. Rev. Lett.
%D 1985
%V 54
%F Shah_etal1985
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=633), last updated on Mon, 24 May 2021 14:34:18 -0500
%X We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
%K 2DEG
%K GaAs/AlGaAs
%K heat flow
%K electron-phonon
%K hole-phonon
%K carrier-phonon
%K interactions
%P 2045-2048