PT Journal
AU Shah, J
   Pinczuk, A
   Gossard, AC
   Wiegmann, W
TI Energy-loss rates for hot electrons and holes in GaAs quantum wells
SO Phys. Rev. Lett.
JI Phys. Rev. Lett.
PY 1985
BP 2045
EP 2048
VL 54
DE 2DEG; GaAs/AlGaAs; heat flow; electron-phonon; hole-phonon; carrier-phonon; interactions
AB We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
ER