TY  - JOUR
AU  - Shah, Jagdeep
AU  - Pinczuk, A.
AU  - Gossard, A. C.
AU  - Wiegmann, W.
PY  - 1985
DA  - 1985//
TI  - Energy-loss rates for hot electrons and holes in GaAs quantum wells
T2  - Phys. Rev. Lett.
JO  - Phys. Rev. Lett.
SP  - 2045
EP  - 2048
VL  - 54
KW  - 2DEG
KW  - GaAs/AlGaAs
KW  - heat flow
KW  - electron-phonon
KW  - hole-phonon
KW  - carrier-phonon
KW  - interactions
AB  - We report the first direct determination of carrier-energy-loss rates in a semiconductor. These measurements provide fundamental insight into carrier-phonon interactions in semiconductors. Unexpectedly large differences are found in the energy-loss rates for electrons and holes in GaAs/AlGaAs quantum wells. This large difference results from an anomalously low electron-energy-loss rate, which we attribute to the presence of nonequilibrium optical phonons rather than the effects of reduced dimensionality or dynamic screening.
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=633), last updated on Mon, 24 May 2021 14:34:18 -0500
ID  - Shah_etal1985
ER  -