@Article{Shaha_etal1985,
author="Shaha, Jagdeep
and Pinczukb, A.
and Gossardb, A. C.
and Wiegmannb, W.",
title="Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes",
journal="Phys. B+C",
year="1985",
volume="134",
number="1-3",
pages="174--178",
optkeywords="2DEG; GaAs/AlGaAs; heat flow; electron-phonon; hole-phonon; carrier-phonon; interactions",
abstract="The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=634), last updated on Mon, 24 May 2021 14:34:35 -0500"
}