PT Journal
AU Shaha, J
   Pinczukb, A
   Gossardb, AC
   Wiegmannb, W
TI Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes
SO Phys. B+C
PY 1985
BP 174
EP 178
VL 134
IS 1-3
DE 2DEG; GaAs/AlGaAs; heat flow; electron-phonon; hole-phonon; carrier-phonon; interactions
AB The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented.
ER