TY  - JOUR
AU  - Shaha, Jagdeep
AU  - Pinczukb, A.
AU  - Gossardb, A. C.
AU  - Wiegmannb, W.
PY  - 1985
DA  - 1985//
TI  - Hot carrier energy loss rates in GaAs quantum wells: large differences between electrons and holes
JO  - Phys. B+C
SP  - 174
EP  - 178
VL  - 134
IS  - 1-3
KW  - 2DEG
KW  - GaAs/AlGaAs
KW  - heat flow
KW  - electron-phonon
KW  - hole-phonon
KW  - carrier-phonon
KW  - interactions
AB  - The first direct and separate determination of the hot electron and hot hole energy loss rates to the lattice shows unexpectedly large differences between electrons and holes in GaAs quantum wells. This large difference results from an anomalously low electron energy loss rate, which we attribute to the presence of non-equilibrium optical phonon rather than the effects of reduced dimensionality or dynamic screening. A model calculation of hot phonon effects is presented.
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=634), last updated on Mon, 24 May 2021 14:34:35 -0500
ID  - Shaha_etal1985
ER  -