@Article{Uchiki_etal1987,
author="Uchiki, Hisao
and Kobayashi, Takayoshi
and Sakaki, Hiroyuki",
title="Photoluminescence and energy{\^a}{\texteuro}loss rates in GaAs quantum wells under high{\^a}{\texteuro}density excitation",
journal="J. Appl. Phys.",
year="1987",
volume="62",
number="3",
pages="1010--1016",
optkeywords="2DEG; GaAs/AlGaAs; heat flow; electron-phonon; hole-phonon; carrier-phonon; interactions",
abstract="The time{\^a}{\texteuro}resolved luminescence spectra from excited conduction subbands in three samples of multi{\^a}{\texteuro}quantum{\^a}{\texteuro}well GaAs/AlxGa1-xAs (x=0.3 and 1) semiconductors with several well widths and barrier heights were obtained under high{\^a}{\texteuro}density excitations by a 30{\^a}{\texteuro}ps pulsed laser at 532 nm, which generated electron--hole pairs to the concentration of 1010--1013/cm2 per well per pulse at 77 K. The temperature and the Fermi energy of electron were determined by fitting best the constructed time{\^a}{\texteuro}resolved spectrum to the observed, and the time{\^a}{\texteuro}dependent electron energy was obtained by using these parameters. The energy{\^a}{\texteuro}loss rates of hot electrons are at least twice smaller than the calculated ones induced by the electron{\^a}{\texteuro}polar phonon scattering, including the screening effect due to the high carrier density.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=635), last updated on Sun, 22 May 2016 17:40:50 -0500"
}