@Article{Cao_etal2009,
author="Cao, Q.
and Yoon, S. F.
and Tong, C. Z.
and Ngo, C. Y.
and Liu, C. Y.
and Wang, R.
and Zhao, H. X.",
title="Two-state competition in 1.3~$\mu$m multilayer InAs/InGaAs quantum dot lasers",
journal="Applied Physics Letters",
year="2009",
volume="95",
number="19",
pages="3",
optkeywords="2DEG",
abstract="The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3~$\mu$m ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600~{\textdegree}C for 15 s.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=673), last updated on Thu, 15 Dec 2011 19:36:31 -0600"
}