%0 Journal Article
%T Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
%A Cao, Q.
%A Yoon, S. F.
%A Tong, C. Z.
%A Ngo, C. Y.
%A Liu, C. Y.
%A Wang, R.
%A Zhao, H. X.
%J Applied Physics Letters
%D 2009
%V 95
%N 19
%F Cao_etal2009
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=673), last updated on Thu, 15 Dec 2011 19:36:31 -0600
%X The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
%K 2DEG
%P 3