PT Journal
AU Cao, Q
   Yoon, SF
   Tong, CZ
   Ngo, CY
   Liu, CY
   Wang, R
   Zhao, HX
TI Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
SO Applied Physics Letters
JI Appl. Phys. Lett.
PY 2009
BP 3
VL 95
IS 19
DE 2DEG
AB The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
ER