TY  - JOUR
AU  - Cao, Q.
AU  - Yoon, S. F.
AU  - Tong, C. Z.
AU  - Ngo, C. Y.
AU  - Liu, C. Y.
AU  - Wang, R.
AU  - Zhao, H. X.
PY  - 2009
DA  - 2009//
TI  - Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers
T2  - Appl. Phys. Lett.
JO  - Applied Physics Letters
SP  - 3
VL  - 95
IS  - 19
KW  - 2DEG
AB  - The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s.
N1  - exported from refbase (https://db.rplab.ru/refbase/show.php?record=673), last updated on Thu, 15 Dec 2011 19:36:31 -0600
ID  - Cao_etal2009
ER  -