@Article{Freer_etal2010,
author="Freer, Erik M.
and Grachev, Oleg
and Duan, Xiangfeng
and Martin, Samuel
and Stumbo, David P.",
title="High-yield self-limiting single-nanowire assembly with dielectrophoresis",
journal="Nature Nanotechnology",
year="2010",
volume="5",
number="7",
pages="525--530",
abstract="Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5{\%} yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.",
optnote="SSPD",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=683), last updated on Fri, 16 Dec 2011 17:50:33 -0600"
}