%0 Journal Article
%T High-yield self-limiting single-nanowire assembly with dielectrophoresis
%A Freer, Erik M.
%A Grachev, Oleg
%A Duan, Xiangfeng
%A Martin, Samuel
%A Stumbo, David P.
%J Nature Nanotechnology
%D 2010
%V 5
%N 7
%F Freer_etal2010
%O SSPD
%O exported from refbase (https://db.rplab.ru/refbase/show.php?record=683), last updated on Fri, 16 Dec 2011 17:50:33 -0600
%X Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
%P 525–530