TY  - JOUR
AU  - Freer, Erik M.
AU  - Grachev, Oleg
AU  - Duan, Xiangfeng
AU  - Martin, Samuel
AU  - Stumbo, David P.
PY  - 2010
DA  - 2010//
TI  - High-yield self-limiting single-nanowire assembly with dielectrophoresis
T2  - Nat. Nanotech.
JO  - Nature Nanotechnology
SP  - 525–530
VL  - 5
IS  - 7
AB  - Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
N1  - SSPD
ID  - Freer_etal2010
ER  -