@Article{Mannino_etal2010,
author="Mannino, Giovanni
and Spinella, Corrado
and Ruggeri, Rosa
and La Magna, Antonino
and Fisicaro, Giuseppe
and Fazio, Enza
and Neri, Fortunato
and Privitera, Vittorio",
title="Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation",
journal="Applied Physics Letters",
year="2010",
volume="97",
number="2",
pages="3",
optkeywords="Annealing",
abstract="We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is {\textasciitilde}80{\%}. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106~{\textdegree}C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat {\^I}{\textpm}-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.",
optnote="Annealing",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=691), last updated on Fri, 16 Dec 2011 19:19:11 -0600"
}