TY  - JOUR
AU  - Mannino, Giovanni
AU  - Spinella, Corrado
AU  - Ruggeri, Rosa
AU  - La Magna, Antonino
AU  - Fisicaro, Giuseppe
AU  - Fazio, Enza
AU  - Neri, Fortunato
AU  - Privitera, Vittorio
PY  - 2010
DA  - 2010//
TI  - Crystallization of implanted amorphous silicon during millisecond annealing by infrared laser irradiation
T2  - Appl. Phys. Lett.
JO  - Applied Physics Letters
SP  - 3
VL  - 97
IS  - 2
KW  - Annealing
AB  - We investigated the homogenous nucleation of crystalline grains in amorphous Si during transient temperature pulse of few milliseconds IR laser irradiation. The crystallized volume fraction is ~80%. Significant crystallization occurs in nonsteady regime because of the rapid temperature variation (106 °C/s). Our model combines the time evolution of the crystal grain population with the consumption of the amorphous volume due to the growth of grains. Thanks to the experimental approach based on a laser source to heat α-Si and the theoretical model we extended the description of the spontaneous crystallization up to 1323 K or 250 K above the temperature investigated by conventional annealing.
N1  - Annealing
ID  - Mannino_etal2010
ER  -