@Article{Jang_etal2010,
author="Jang, Young Rae
and Yoo, Keon-Ho
and Park, Seung Min",
title="Rapid thermal annealing of ZnO thin films grown at room temperature",
journal="J. Vac. Sci. Technol. A",
year="2010",
volume="28",
number="2",
pages="4",
optkeywords="Annealing",
abstract="The authors successfully obtained high quality ZnO thin films by growing them at room temperature (RT) and postannealing by rapid thermal annealing (RTA). The thin films were grown by pulsed laser deposition on Si (100) substrates at RT, and RTA was performed under various temperatures and ambient conditions. Based on the UV emission to visible emission ratio in RT photoluminescence (PL) spectra, the optimum film was obtained at annealing temperature {\textasciitilde}700~{\textdegree}C in an ambient of Ar, N2, or O2 at 0.1 Torr, while the optimum annealing temperature was above 1100~{\textdegree}C in the air ambient at atmospheric pressure. The morphology and structure of the films in different RTA conditions were investigated by using field emission scanning electron microscopy and grazing incidence x-ray diffraction, and were discussed in conjunction with the PL data.",
optnote="Annealing",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=692), last updated on Sun, 22 May 2016 17:26:54 -0500"
}