@Article{Mitin_etal2011,
author="Mitin, Vladimir
and Antipov, Andrei
and Sergeev, Andrei
and Vagidov, Nizami
and Eason, David
and Strasser, Gottfried",
title="Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers",
journal="Nanoscale Research Letters",
year="2011",
volume="6",
number="1",
pages="6",
optkeywords="Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes",
abstract="Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases {\textasciitilde}30 times as the height of potential barriers changes from 30 to 130 meV.",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=712), last updated on Tue, 20 Dec 2011 17:32:58 -0600"
}