PT Journal
AU He, R
   Sazio, PJA
   Peacock, AC
   Healy, N
   Sparks, JR
   Krishnamurthi, M
   Gopalan, V
   Badding, JV
TI Integration of gigahertz-bandwidth semiconductor devices inside microstructured optical fibres
SO Nature Photonics
JI Nat. Photon.
PY 2012
BP 174
EP 179
VL 6
IS 3
DE fromIPMRAS
AB The prospect of an all-fibre optical communications network in which light can be generated, modulated and detected within the fibre itself without the need for discrete optoelectronic devices is an appealing one. However, to become a reality, this approach requires the incorporation of optoelectronic materials and functionalities into silica fibres to create a new breed of semiconductor-fibre hybrid devices for performing various tasks. Here, we report the integration of precisely doped semiconductor materials and high-quality rectifying semiconductor junctions into microstructured optical fibres, enabling high-speed, in-fibre functionalities such as photodetection at telecommunications wavelengths. These semiconductor-fibre hybrid devices exhibit a bandwidth of up to 3 GHz and seamless coupling to standard single-mode optical fibres.
ER