PT Unknown
AU Khosropanah, P
   Merkel, H
   Yngvesson, S
   Adam, A
   Cherednichenko, S
   Kollberg, E
TI A distributed device model for phonon-cooled HEB mixers predicting IV characteristics, gain, noise and IF bandwidth
SE Proc. 11[super:th] Int. Symp. Space Terahertz Technol.
PY 2000
BP 474
EP 488
DE HEB mixer numerical model; diffusion cooling channel; diffusion channel; distributed HEB model; distributed model
AB A distributed model for phonon-cooled superconductor hot electron bolometer (HEB) mixers is given, which is based on solving the one-dimensional heat balance equation for the electron temperature profile along the superconductor strip. In this model it is assumed that the LO power is absorbed uniformly along the bridge but the DC power absorption depends on the local resistivity and is thus not uniform. The electron temperature dependence of the resistivity is assumed to be continuous and has a Fermi form. These assumptions are used in setting up the non-linear heat balance equation, which is solved numerically for the electron temperature profile along the bolometer strip. Based on this profile the resistance of the device and the IV curves are calculated. The IV curves are in excellent agreement with measurement results. Using a small signal model the conversion gain of the mixer is obtained. The expressions for Johnson noise and thermal fluctuation noise are derived. The calculated results are in close agreement with measurements, provided that one of the parameters used is adjusted.
PI University of Michigan, Ann Arbor, MI USA
ER