@Article{Gershenzon_etal1979,
author="Gershenzon, E. M.
and Il{\textquoteright}in, V. A.
and Litvak-Gorskaya, L. B.
and Filonovich, S. R.",
title="Character of submillimeter photoconductivity in n-lnSb",
journal="Sov. Phys. JETP",
year="1979",
volume="49",
number="1",
pages="121--128",
abstract="A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8).",
optnote="exported from refbase (https://db.rplab.ru/refbase/show.php?record=985), last updated on Fri, 28 May 2021 18:45:01 -0500"
}