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Author Sáysz, Wojciech; Guziewicz, Marek; Bar, Jan; Wegrzecki, Maciej; Grabiec, Piotr; Grodecki, Remigiusz; Wegrzecka, Iwona; Zwiller, Val; Milosnaya, Irina; Voronov, Boris; Gol’tsman, Gregory; Kitaygorsky, Jen; Sobolewski, Roman
Title Superconducting NbN nanostructures for single photon quantum detectors Type Abstract
Year 2008 Publication Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons Abbreviated Journal (up) Proc. 7-th Int. Conf. Ion Implantation and Other Applications of Ions and Electrons
Volume Issue Pages 160
Keywords SSPD, SNSPD
Abstract Practical quantum systems such as quantum communication (QC) or quantum measurement systems require detectors with high speed, high sensitivity, high quantum efficiency (QE), and short deadtimes along with precise timing characteristics and low dark counts. Superconducting single photon detectors (SSPDs) based on ultrathin meander type NbN nanostripes (operated at T=2-5K) are a new and highly promising type of devices fulfilling above requirements. In this paper we present results of the SSPDs nanostructure technological optimization. The base for our detector is thin-film (4nm) NbN layer deposited on 350- P m-thick sapphire substrate The active element of the detector is a meander- nanostructure made of 4-nm-thick and 100-nm-wide NbN stripe, covering 10 u 10 P m 2 area with the filling factor ~0,5. The NbN superconducting films were deposited on sapphire substrates by DC reactive magnetron sputtering whereas the meander element of the detector was patterned by the direct electron-beam lithography followed by reactive-ion etching. To enhance the SSPD efficiency at Ȝ = 1.55 P m, we have performed an approach to increase the absorption of the detector by integrating it with optical resonant cavity. An optical microcavity optimized for absorption of 1.55 P m photons was designed as an one-mirror resonator consisting of a Ȝ/4 dielectric layer and a metallic mirror. The microcavity was deposited on the top of the NbN SSPD meander. The resonator was formed by the dielectric SiO 2 layer and metal mirror made of gold or palladium. Microcavity layers were deposited using a magnetron sputtering system.
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Call Number Serial 1409
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Author Yagubov, P.; Gol'tsman, G.; Voronov, B.; Seidman, L.; Siomash, V.; Cherednichenko, S.; Gershenzon, E.
Title The bandwidth of HEB mixers employing ultrathin NbN films on sapphire substrate Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up) Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 290-302
Keywords NbN HEB mixers, fabrication process
Abstract We report on some unusual features observed during fabrication of ultrathin NbN films with high Tc. The films were used to fabricate HEB mixers, which were evaluated for IF bandwidth measurements at 140 GHz. Ultrathin films were fabricated using reactive dc magnetron sputtering with a discharge current source. Reproducible parameters of the films are assured keeping constant the difference between the discharge voltage in pure argon, and in a gas mixture, for the same current. A maximum bandwidth of 4 GHz at optimal LO and dc bias was obtained for mixer chip based on NbN film 35 A thick with Tc = 11 K.
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Corporate Author Thesis
Publisher Place of Publication Charlottesville, Virginia, USA Editor
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Notes Approved no
Call Number Serial 266
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Author Kawamura, J.; Blundell, R.; Tong, C.-Y. E.; Golts'man, G.; Gershenzon, E.; Voronov B.
Title Superconductive NbN hot-electron bolometric mixer performance at 250 GHz Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up) Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 331-336
Keywords NbN HEB mixers
Abstract Thin film NbN (<40 A) strips are used as waveguide mixer elements. The electron cooling mechanism for the geometry is the electron-phonon interaction. We report a receiver noise temperature of 750 K at 244 GHz, with / IF = 1.5 GHz, Af= 500 MHz, and Tphysical = 4 K. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator (LO) power is 0.5 1.tW with 3 dB-uncertainty. The mixer is linear to 1 dB up to an input power level 6 dB below the LO power. We report the first detection of a molecular line emission using this class of mixer, and that the receiver noise temperature determined from Y-factor measurements reflects the true heterodyne sensitivity.
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Notes Approved no
Call Number Serial 945
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Author Yagoubov, P.; Gol'tsman, G.; Voronov, B.; Svechnikov, S.; Cherednichenko, S.; Gershenzon, E.; Belitsky, V.; Ekström, H.; Semenov, A.; Gousev, Yu.; Renk, K.
Title Quasioptical phonon-cooled NbN hot-electron bolometer mixer at THz frequencies Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up) Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 303-317
Keywords NbN HEB mixers
Abstract In our experiments we tested phonon-cooled hot-electron bolometer (HEB) quasioptical mixer based on spiral antenna designed for 0.5-1.2 THz frequency band and fabricated on sapphire, Si-coated sapphire and high resistivity silicon substrates. HEB devices were produced from thin superconducting NbN film 3.5-6 nm thick with the critical temperature of about 11-12 K. For these devices we achieved the receiver noise temperature T R (DSB) = 3000 K in the 500-700 GHz frequency range and an IF bandwidth of 3-4 GHz. Prelimanary measurements at frequencies 1-1.2 THz resulted the receiver noise temperature about 9000 K (DSB).
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Call Number Serial 1614
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Author Trifonov, V. A.; Karasik, B. S.; Zorin, M. A.; Gol'tsman, G. N.; Gershenzon, E. M.; Lindgren, M.; Danerud, M.; Winkler, D.
Title 9.6 μm wavelength mixing in a patterned YBa2Cu3O7-δ thin film Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up) Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 337-348
Keywords YBCO HTS HEB mixers
Abstract Hot-electron bolometric (HEB) mixing of 9.6 gm infrared radiation from two lasers in high-quality YBa2Cu307_3 (YBCO) patterned thin film has been demonstrated. A heterodyne measurement showed an intermediate frequency (IF) bandwidth of 18 GHz, limited by our measurement system. An intrinsic limit of 100 GHz is predicted. Between 0.1 and 1 GHz intermediate frequency, temperature fluctuations with an equivalent output noise temperature Tfl up to -150 K, contributed to the mixer noise while Johnson noise dominated above 1 GHz. The overall conversion loss at 77 K at low intermediate frequencies was measured to be -25 dB, of which 13 dB was due to the coupling loss. The IIEB mixer is very promising for use in heterodyne receivers within the whole infrared range.
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Notes Approved no
Call Number Serial 1615
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Author Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S.; Mueller, E. R.; Waldman, J.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenco, S. I.; Svechnikov, S. I.; Yagoubov, P. A.; Gershenzon, E. M.
Title Optimization of hot eleciron bolometer mixing efficiency in NbN at 119 micrometer wavelength Type Conference Article
Year 1996 Publication Proc. 7th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up) Proc. 7th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 584-600
Keywords NbN HEB mixers
Abstract We describe an investigation of a NbN HEB mixer for 2.5 THz. An intrinsic conversion loss of 23 dB has been measured with a two-laser measurement technique. The conversion loss was limited by the LO power available and is expected to decrease to 10 dB or less when sufficient LO power is available. For this initial experiment we used a prototype device which is directly coupled to the laser beams. We present results for a back-short technique that improves the optical coupling to the device and describe our progress for an antenna-coupled device with a smaller dimension. Based on our measured data for conversion loss and device output noise level, we predict that NbN HEB mixers will be capable of achieving DSB receiver noise temperatures of ten times the quantum noise limit in the THz range.
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Notes Approved no
Call Number Serial 1616
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Author Hübers, Heinz-Wilhelm; Semenov, Alexei; Schubert, Josef; Gol'tsman, Gregory; Voronov, Boris; Gershenzon, Evgeni
Title Performance of the phonon-cooled hot-electron bolometric mixer between 0.7 THz and 5.2 THz Type Conference Article
Year 2000 Publication Proc. 8-th Int. Conf. on Terahertz Electronics Abbreviated Journal (up) Proc. 8-th Int. Conf. on Terahertz Electronics
Volume Issue Pages 117-119
Keywords NbN HEB mixers
Abstract We report on the phonon cooled NbN hot electron bolometer as mixer in the terahertz frequency range. Its hybrid antenna consists of a hyperhemispheric silicon lens and a logarithmic-spiral feed antenna. Noise temperatures have been measured between 0.7 THz and 5.2 THz. A quarter wavelength layer of Parylene works as antireflection coating for the silicon lens and reduces the noise temperature by about 30. It was found that the antenna pattern at 2.5 THz is determined by the feed antenna and not by the diameter of the lens.
Address Darmstadt, Germany
Corporate Author Thesis
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Area Expedition Conference International Conference on Terahertz Electronics [8th], Held inDarmstadt, Germany on 28-29 September 2000
Notes Approved no
Call Number Serial 1553
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Author Romanov, N. R.; Zolotov, P. I.; Smirnov, K. V.
Title Development of disordered ultra-thin superconducting vanadium nitride films Type Conference Article
Year 2019 Publication Proc. 8th Int. Conf. Photonics and Information Optics Abbreviated Journal (up) Proc. 8th Int. Conf. Photonics and Information Optics
Volume Issue Pages 425-426
Keywords VN films
Abstract We present the results of development and research of superconducting vanadium nitride VN films ~10 nm thick having different level of disorder. It is showed that both silicon substrate temperature T sub in process of magnetron sputtering and total gas pressure P affect superconducting transition temperature of sputtered films and R 300 /R 20 ratio defining their level of disorder. VN films suitable for development of superconducting single-photon detectors on their basis are obtained.
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN 978-5-7262-2536-4 Medium
Area Expedition Conference
Notes http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf Approved no
Call Number Serial 1802
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Author Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V.
Title Characterization of topologies of superconducting photon number resolving detectors Type Conference Article
Year 2019 Publication Proc. 8th Int. Conf. Photonics and Information Optics Abbreviated Journal (up) Proc. 8th Int. Conf. Photonics and Information Optics
Volume Issue Pages 465-466
Keywords PNR SSPD
Abstract Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated.
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Publisher Place of Publication Editor
Language Russian Summary Language Original Title
Series Editor Series Title Abbreviated Series Title
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ISSN ISBN 978-5-7262-2536-4 Medium
Area Expedition Conference
Notes http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf Approved no
Call Number Serial 1803
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Author Cherednichenko, S.; Yagoubov, P.; Il'In, K.; Gol'tsman, G.; Gershenzon, E.
Title Large bandwidth of NbN phonon-cooled hot-electron bolometer mixers on sapphire substrates Type Conference Article
Year 1997 Publication Proc. 8th Int. Symp. Space Terahertz Technol. Abbreviated Journal (up) Proc. 8th Int. Symp. Space Terahertz Technol.
Volume Issue Pages 245-257
Keywords NbN HEB mixers, fabrication process
Abstract The bandwidth of NbN phonon-cooled hot electron bolometer mixers has been systematically investigated with respect to the film thickness and film quality variation. The films, 2.5 to 10 mm thick, were fabricated on sapphire substrates using DC reactive magnetron sputtering. All devices consisted of several parallel strips, each 1 1.1 wide and 211 long, placed between Ti-Au contact pads. To measure the gain bandwidth we used two identical BWOs operating in the 120-140 GHz frequency range, one functioning as a local oscillator and the other as a signal source. The majority of the measurements were made at an ambient temperature of 4.5 K with optimal LO and DC bias. The maximum 3 dB bandwidth (about 4 GHz) was achieved for the devices made of films which were 2.5-3.5 nm thick, had a high critical temperature, and high critical current density. A theoretical analysis of bandwidth for these mixers based on the two-temperature model gives a good description of the experimental results if one assumes that the electron temperature is equal to the critical temperature.
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Notes Approved no
Call Number Serial 276
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