| Records |
| Author |
Смирнов, Константин Владимирович |
| Title |
Энергетическая релаксация электронов в 2D-канале гетеропереходов GAAS/ALGAAS и транспортные процессы в структурах полупроводник-сверхпроводник на их основе |
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Manuscript |
| Year |
2000 |
Publication |
М. МПГУ |
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Pages |
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| Keywords |
2DEG, AlGaAs/GaAs heterostructures, NbN films |
| Abstract |
Диссертация посвящена изучению электрон-фононного взаимодействия в двумерном электронном газе, образующемся на границе раздела полупроводников AlGaAs и GaAs, а также созданию на основе гетероперехода GaAs/AlGaAs и сверхпроводника NbN гибридных структур сверхпроводник-полупроводник-сверхпроводник и изучению их электрофизических свойств. |
| Address |
Москва, МПГУ |
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Thesis |
Ph.D. thesis |
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no |
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Serial |
1830 |
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| Author |
Смирнов, К. В. |
| Title |
AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона |
Type |
Abstract |
| Year |
2003 |
Publication |
Тезисы докладов VI Российской конференции по физике полупроводников |
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Issue |
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Pages |
181 |
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2DEG, AlGaAs/GaAs heterostructures, mixer |
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ФТИ им. А. Ф. Иоффе, Санк-Петербург |
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VI Российской конференции по физике полупроводников (27-31 октября) |
| Notes |
Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] |
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1837 |
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| Author |
An, Zhenghua; Chen, Jeng-Chung; Ueda, T.; Komiyama, S.; Hirakawa, K. |
| Title |
Infrared phototransistor using capacitively coupled two-dimensional electron gas layers |
Type |
Journal Article |
| Year |
2005 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
86 |
Issue |
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Pages |
172106 - 172106-3 |
| Keywords |
2DEG |
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no |
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RPLAB @ akorneev @ |
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603 |
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| Author |
Cao, Q.; Yoon, S. F.; Tong, C. Z.; Ngo, C. Y.; Liu, C. Y.; Wang, R.; Zhao, H. X. |
| Title |
Two-state competition in 1.3 μm multilayer InAs/InGaAs quantum dot lasers |
Type |
Journal Article |
| Year |
2009 |
Publication |
Applied Physics Letters |
Abbreviated Journal |
Appl. Phys. Lett. |
| Volume |
95 |
Issue |
19 |
Pages |
3 |
| Keywords |
2DEG |
| Abstract |
The competition of ground state (GS) and excited state (ES) is investigated from the as-grown and thermally annealed 1.3 μm ten-layer p-doped InAs/GaAs quantum dot (QD) lasers. The modal gain competition between GS and ES are measured and analyzed around the ES threshold characteristics. Our results show that two-state competition is more significant in devices with short cavity length operating at high temperature. By comparing the as-grown and annealed devices, we demonstrate enhanced GS and suppressed ES lasing from the QD laser annealed at 600 °C for 15 s. |
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no |
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RPLAB @ gujma @ |
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673 |
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| Author |
Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I. |
| Title |
Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures |
Type |
Journal Article |
| Year |
2010 |
Publication |
Bull. Russ. Acad. Sci. Phys. |
Abbreviated Journal |
Bull. Russ. Acad. Sci. Phys. |
| Volume |
74 |
Issue |
1 |
Pages |
100-102 |
| Keywords |
2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth |
| Abstract |
The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering. |
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1062-8738 |
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no |
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1217 |
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