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	Author	Shangina, E. L.; Smirnov, K. V.; Morozov, D. V.; Kovalyuk, V. V.; Gol’tsman, G. N.; Verevkin, A. A.; Toropov, A. I.
	Title	Concentration dependence of the intermediate frequency bandwidth of submillimeter heterodyne AlGaAs/GaAs nanostructures			Type	Journal Article
	Year	2010	Publication	Bull. Russ. Acad. Sci. Phys.	Abbreviated Journal	Bull. Russ. Acad. Sci. Phys.
	Volume	74	Issue	1	Pages	100-102
	Keywords	2DEG AlGaAs/GaAs heterostructures, THz heterodyne detectors, IF bandwidth
	Abstract	The concentration dependence of the intermediate frequency bandwidth of heterodyne AlGaAs/GaAs detectors with 2D electron gas is measured using submillimeter spectroscopy with high time resolution at T= 4.2 K. The intermediate frequency bandwidth f3dBfalls from 245 to 145 MHz with increasing concentration of 2D electrons n s = (1.6-6.6) × 10[su11] cm-2. The dependence f3dB ≈ n s – 0.04±is observed in the studied concentration range; this dependence is determined by electron scattering by the deformation potential of acoustic phonons and piezoelectric scattering.
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	Language		Summary Language		Original Title
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	Series Volume		Series Issue		Edition
	ISSN	1062-8738	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1217
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