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| Author |
Bennett, Douglas A.; Schmidt, Daniel R.; Swetz, Daniel S.; Ullom, Joel N. |
| Title |
Phase-slip lines as a resistance mechanism in transition-edge sensors |
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Journal Article |
| Year |
2014 |
Publication |
Appl. Phys. Lett. |
Abbreviated Journal  |
Appl. Phys. Lett. |
| Volume |
104 |
Issue |
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Pages |
042602 |
| Keywords |
microbolometers, TES, phase-slip lines, PSL |
| Abstract |
The fundamental mechanism of resistance in voltage-biased superconducting films is poorly understood despite its importance as the basis of transition-edge sensors (TESs). TESs are utilized in state-of-the-art microbolometers and microcalorimeters covering a wide range of energies and applications. We present a model for the resistance of a TES based on phase-slip lines (PSLs) and compare the model to data. One of the model's predictions, discrete changes in the number of PSLs, is a possible explanation for the observed switching between discrete current states in localized regions of bias. |
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Recommended by Klapwijk |
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929 |
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| Author |
Galeazzi, Massimiliano |
| Title |
Fundamental noise processes in TES devices |
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Journal Article |
| Year |
2011 |
Publication |
IEEE Trans. Appl. Supercond. |
Abbreviated Journal |
IEEE Trans. Appl. Supercond. |
| Volume |
21 |
Issue |
3 |
Pages |
267-271 |
| Keywords |
TES, Johnson noise, phonon noise, excess noise, flux-flow noise, thermal fluctuation noise |
| Abstract |
Microcalorimeters and bolometers are noise-limited devices, therefore, a proper understanding of all noise sources is essential to predict and interpret their performance. In this paper, I review the fundamental noise processes contributing to Transition Edge Sensor (TES) microcalorimeters and bolometers and their effect on device performance. In particular, I will start with a simple, monolithic device model, moving to a more complex one involving discrete components, to finally move to today's more realistic, comprehensive model. In addition to the basic noise contribution (equilibrium Johnson noise and phonon noise), TES are significantly affected by extra noise, which is commonly referred to as excess noise. Different fundamental processes have been proposed and investigated to explain the origin of this excess noise, in particular near equilibrium non-linear Johnson noise, flux-flow noise, and internal thermal fluctuation noise. Experimental evidence shows that all three processes are real and contribute, at different levels, to the TES noise, although different processes become important at different regimes. It is therefore time to discard the term “excess noise” and consider these terms part of the “fundamental noise processes” instead. |
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Recommended by Klapwijk |
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914 |
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Gershenzon, E.; Goltsman, G.; Orlov, L.; Ptitsina, N. |
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Population of excited-states of small admixtures in germanium |
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Conference Article |
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1978 |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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Izv. Akad. Nauk SSSR, Seriya Fizicheskaya |
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42 |
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6 |
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1154-1159 |
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Ge, excited states, admixtures |
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Mezhdunarodnaya Kniga 39 Dimitrova Ul., 113095 Moscow, Russia |
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1723 |
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Gershenzon, E.M.; Gol'tsman, G.N.; Ptitsyna, N. G. |
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Carrier lifetime in excited states of shallow impurities in germanium |
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Journal Article |
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1977 |
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JETP Lett. |
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JETP Lett. |
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25 |
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12 |
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539-543 |
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Ge, shallow impurities, excited states |
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1726 |
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Gershenzon, E. M.; Gol'tsman, G. N. |
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Transitions of electrons between excited states of donors in germanium |
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Journal Article |
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1971 |
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JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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14 |
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2 |
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63-65 |
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Ge, donors, excited states |
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