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| Author | Shcheslavskiy, V.; Morozov, P.; Divochiy, A.; Vakhtomin, Y.; Smirnov, K.; Becker, W. | ||||
| Title | Erratum: “Ultrafast time measurements by time-correlated single photon counting coupled with superconducting single photon detector” [Rev. Sci. Instrum. 87, 053117 (2016)] | Type | Miscellaneous | ||
| Year | 2016 | Publication | Rev. Sci. Instrum. | Abbreviated Journal | Rev. Sci. Instrum. |
| Volume | 87 | Issue | 6 | Pages | 069901 |
| Keywords | SSPD, SNSPD, TCSPC, jitter | ||||
Abstract  |
In the original paper1the Ref. 10 should be M. Sanzaro, N. Calandri, A. Ruggeri, C. Scarcella, G. Boso, M. Buttafava, and A. Tosi, Proc. SPIE9370, 93701T (2015). | ||||
| Address | Becker & Hickl GmbH, Nahmitzer Damm 30, Berlin 12277, Germany | ||||
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| ISSN | 0034-6748 | ISBN | Medium | ||
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| Notes | PMID:27370512 | Approved | no | ||
| Call Number | Serial | 1810 | |||
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| Author | Krause, S.; Mityashkin, V.; Antipov, S.; Gol'tsman, G.; Meledin, D.; Desmaris, V.; Belitsky, V.; Rudzinski, M. | ||||
| Title | Study of IF bandwidth of NbN hot electron bolometers on GaN buffer layer using a direct measurement method | Type | Conference Article | ||
| Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | |
| Volume | Issue | Pages | 30-32 | ||
| Keywords | NbN HEB, GaN buffer layer | ||||
| Abstract |
In this paper, we present a reliable measurement method to study the influence of the GaN buffer layer on phonon-escape time in comparison with commonly used Si substrates and, in consequence, on the IF bandwidth of HEBs. One of the key aspects is to operate the HEB mixer at elevated bath temperatures close to the critical temperature of the NbN ultra-thin film, where contributions from electron-phonon processes and self-heating effects are relatively small, therefore IF roll-off will be governed by the phonon-escape.Two independent experiments were performed at GARD and MSPU on a similar experimental setup at frequencies of approximately 180 and 140 GHz, respectively, and have shown reproducible and consistent results. The entire IF chain was characterized by S-parameter measurements. We compared the measurement results of epitaxial NbN grown onto GaN buffer-layer with Tc of 12.5 K (4.5nm) with high quality polycrystalline NbN films on Si substrate with Tc of 10.5K (5nm) and observed a strong indication of an enhancement of phonon escape to the substrate by a factor of two for the NbN/GaN material combination. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1202 | |||
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| Author | Khasminskaya, S.; Pyatkov, F.; Słowik, K.; Ferrari, S.; Kahl, O.; Kovalyuk, V.; Rath, P.; Vetter, A.; Hennrich, F.; Kappes, M. M.; Gol'tsman, G.; Korneev, A.; Rockstuhl, C.; Krupke, R.; Pernice, W. H. P. | ||||
| Title | Fully integrated quantum photonic circuit with an electrically driven light source | Type | Journal Article | ||
| Year | 2016 | Publication | Nat. Photon. | Abbreviated Journal | Nat. Photon. |
| Volume | 10 | Issue | 11 | Pages | 727-732 |
| Keywords | Carbon nanotubes and fullerenes, Integrated optics, Single photons and quantum effects, Waveguide integrated single-photon detector | ||||
| Abstract |
Photonic quantum technologies allow quantum phenomena to be exploited in applications such as quantum cryptography, quantum simulation and quantum computation. A key requirement for practical devices is the scalable integration of single-photon sources, detectors and linear optical elements on a common platform. Nanophotonic circuits enable the realization of complex linear optical systems, while non-classical light can be measured with waveguide-integrated detectors. However, reproducible single-photon sources with high brightness and compatibility with photonic devices remain elusive for fully integrated systems. Here, we report the observation of antibunching in the light emitted from an electrically driven carbon nanotube embedded within a photonic quantum circuit. Non-classical light generated on chip is recorded under cryogenic conditions with waveguide-integrated superconducting single-photon detectors, without requiring optical filtering. Because exclusively scalable fabrication and deposition methods are used, our results establish carbon nanotubes as promising nanoscale single-photon emitters for hybrid quantum photonic devices. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1105 | ||
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| Author | Iomdina, E. N.; Seliverstov, S.; Sianosyan, A.; Teplyakova, K.; Rusova, A.; Goltsman, G. | ||||
| Title | The prospects of using the radiation for the assessment of corneal and scleral hydration | Type | Abstract | ||
| Year | 2016 | Publication | Acta Ophthalmol. | Abbreviated Journal | Acta Ophthalmol. |
| Volume | 94 | Issue | Pages | ||
| Keywords | BWO, avalanche transit‐time diode, medicine, biology | ||||
| Abstract |
Purpose An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells – the cornea and the sclera. THz systems creating images in reflected beams are likely to become ideal instruments of noninvasive testing of corneal and scleral hydration degree as THz radiation is highly sensitive to water content. The paper aims at studying the transmittance and reflectance spectra of the cornea and the sclera of rabbit and human eyes, as well as those of the whole rabbit eye, in the frequency range of 0.13–0.32 THz. Methods The experiments were carried out on 3 corneas and 3 rabbit scleras, 2 whole rabbit eyes, and 3 human healthy adult scleras using a specially developed THz system based on reliable and easy‐to‐use continuous wave sources: a backward‐wave oscillator and an avalanche transit‐time diode. Results The transmittance spectra of the cornea and the sclera and the dependence of the reflection coefficient of these tissues in THz range on water percentage content were determined. Comparison of the rabbit cornea hydrated from 73.2% to 76.3% concentration by mass demonstrated an approximately linear relationship between THz reflectivity and water concentration. The decrease of free water concentration by 1% leads to a drop of the reflectance coefficient by 13%. The parameters studied displayed noticeable differences between the sclera and the cornea of rabbits and between rabbit sclera and human sclera. Conclusions Preliminary results demonstrate that the proposed technique, based on continuous THz radiation, may be used to create a device for noninvasive testing of corneal and scleral hydration, which has good potential of wide‐scale practical application. The work was supported by the Russian Foundation of Basic Research (grant No.15‐29‐03843) |
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| ISSN | 1755375X | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1333 | |||
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| Author | Tret'yakov, I. V.; Kaurova, N. S.; Voronov, B. M.; Anfert'ev, V. A.; Revin, L. S.; Vaks, V. L.; Gol'tsman, G. N. | ||||
| Title | The influence of the diffusion cooling on the noise band of the superconductor NbN hot-electron bolometer operating in the terahertz range | Type | Journal Article | ||
| Year | 2016 | Publication | Tech. Phys. Lett. | Abbreviated Journal | |
| Volume | 42 | Issue | 6 | Pages | 563-566 |
| Keywords | HEB, noise bandwidth, conversion gain bandwidth, noise temperature, Andreev reflection | ||||
| Abstract |
Results of an experimental study of the noise temperature (Tn) and noise bandwidth (NBW) of the superconductor NbN hot-electron bolometer (HEB) mixer as a function of its temperature (Tb) are presented. It was determined that the NBW of the mixer is significantly wider at temperatures close to the critical ones (Tc) than are values measured at 4.2 K. The NBW of the mixer measured at the heterodyne frequency of 2.5 THz at temperature Tb close to Tc was ~13 GHz, as compared with 6 GHz at Tb = 4.2 K. This experiment clearly demonstrates the limitation of the thermal flow from the NbN bridge at Tb â‰<aa> Tc for mixers manufactured by the in situ technique. This limitation is close in its nature to the Andreev reflection on the superconductor/ metal boundary. In this case, the noise temperature of the studied mixer increased from 1100 to 3800 K. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1106 | |||
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| Author | Beebe, M. R.; Beringer, D. B.; Burton, M. C.; Yang, K.; Lukaszew, R. A. | ||||
| Title | Stoichiometry and thickness dependence of superconducting properties of niobium nitride thin films | Type | Journal Article | ||
| Year | 2016 | Publication | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films | Abbreviated Journal | Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films |
| Volume | 34 | Issue | 2 | Pages | 021510 (1 to 4) |
| Keywords | potential plagiarism, possible plagiarism, NbN films | ||||
| Abstract |
The current technology used in linear particle accelerators is based on superconducting radio frequency (SRF) cavities fabricated from bulk niobium (Nb), which have smaller surface resistance and therefore dissipate less energy than traditional nonsuperconducting copper cavities. Using bulk Nb for the cavities has several advantages, which are discussed elsewhere; however, such SRF cavities have a material-dependent accelerating gradient limit. In order to overcome this fundamental limit, a multilayered coating has been proposed using layers of insulating and superconducting material applied to the interior surface of the cavity. The key to this multilayered model is to use superconducting thin films to exploit the potential field enhancement when these films are thinner than their London penetration depth. Such field enhancement has been demonstrated in MgB2 thin films; here, the authors consider films of another type-II superconductor, niobium nitride (NbN). The authors present their work correlating stoichiometry and superconducting properties in NbN thin films and discuss the thickness dependence of their superconducting properties, which is important for their potential use in the proposed multilayer structure. While there are some previous studies on the relationship between stoichiometry and critical temperature TC, the authors are the first to report on the correlation between stoichiometry and the lower critical field HC1. | ||||
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| ISSN | 0734-2101 | ISBN | Medium | ||
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| Notes | Potential plagiarism for 1503 | Approved | no | ||
| Call Number | Serial | 1504 | |||
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| Author | Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. | ||||
| Title | Spectrally resolved single-photon imaging with hybrid superconducting – nanophotonic circuits | Type | Miscellaneous | ||
| Year | 2016 | Publication | arXiv | Abbreviated Journal | arXiv |
| Volume | Issue | Pages | 1-20 | ||
| Keywords | waiveguide SSPD, SNSPD, imaging | ||||
| Abstract |
The detection of individual photons is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multi-color imaging techniques, such as single photon spectroscopy, fluorescence resonance energy transfer microscopy and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz. We demonstrate multi-detector devices for telecommunication and visible wavelengths and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting-nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength division multiplexing on a chip. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1334 | |||
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| Author | Trifonov, A.; Tong, C.-Y. E.; Lobanov, Y.; Kaurova, N.; Blundell, R.; Goltsman, G. | ||||
| Title | Gap frequency and photon absorption in a hot electron bolometer | Type | Conference Article | ||
| Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 27th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 121 | ||
| Keywords | NbN HEB; Si membrane | ||||
| Abstract |
The superconducting energy gap is a crucial parameter of a superconductor when used in mixing applications. In the case of the SIS mixer, the mixing process is efficient for frequencies below the energy gap, whereas, in the case of the HEB mixer, the mixing process is most efficient at frequencies above the gap, where photon absorption takes place more readily. We have investigated the photon absorption phenomenon around the gap frequency of HEB mixers based on NbN films deposited on silicon membranes. Apart from studying the pumped I-V curves of HEB devices, we have also probed them with microwave radiation, as previously described [1]. At frequencies far below the gap frequency, the pumped I-V curves show abrupt switching between the superconducting and resistive states. For the NbN HEB mixers we tested, which have critical temperatures of ~9 K, this is true for frequencies below about 400 GHz. As the pump frequency is increased beyond 400 GHz, the resistive state extends towards zero bias and at some point a small region of negative differential resistance appears close to zero bias. In this region, the microwave probe reveals that the device impedance is changing randomly with time. As the pump frequency is further increased, this random impedance change develops into relaxation oscillations, which can be observed by the demodulation of the reflected microwave probe. Initially, these oscillations take the form of several frequencies grouped together under an envelope. As we approach the gap frequency, the multiple frequency relaxation oscillations coalesce into a single frequency of a few MHz. The resultant square-wave nature of the oscillation is a clear indication that the device is in a bi-stable state, switching between the superconducting and normal state. Above the gap frequency, it is possible to obtain a pumped I-V curve with no negative differential resistance above a threshold pumping level. Below this pumping level, the device demonstrates bi-stability, and regular relaxation oscillation at a few MHz is observed as a function of pump power. The threshold pumping level is clearly related to the amount of power absorbed by the device and its phonon cooling. From the above experiment, we can derive the gap frequency of the NbN film, which is 585 GHz for our 6 μm thin silicon membrane-based device. We also confirm that the HEB mixer is not an efficient photon absorber for radiation below the gap frequency. 1. A. Trifonov et al., “Probing the stability of HEB mixers with microwave injection”, IEEE Trans. Appl. Supercond., vol. 25, no. 3, June 2015. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1204 | |||
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| Author | Arutyunov, K. Y.; Ramos-Álvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol’tsman, G. N. | ||||
| Title | Quasi-1-dimensional superconductivity in highly disordered NbN nanowires | Type | Miscellaneous | ||
| Year | 2016 | Publication | arXiv | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | narrow NbN nanowires, BCS | ||||
| Abstract |
The topic of superconductivity in strongly disordered materials has attracted a significant attention. In particular vivid debates are related to the subject of intrinsic spatial inhomogeneity responsible for non-BCS relation between the superconducting gap and the pairing potential. Here we report experimental study of electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. We find that conventional models based on phase slip concept provide reasonable fits for the shape of the R(T) transition curve. Temperature dependence of the critical current follows the text-book Ginzburg-Landau prediction for quasi-one-dimensional superconducting channel Ic~(1-T/Tc)^3/2. Hence, one may conclude that the intrinsic electronic inhomogeneity either does not exist in our structures, or, if exist, does not affect their resistive state properties. | ||||
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| Notes | Duplicated as 1332 | Approved | no | ||
| Call Number | Serial | 1338 | |||
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| Author | Arutyunov, K. Y.; Ramos-Alvarez, A.; Semenov, A. V.; Korneeva, Y. P.; An, P. P.; Korneev, A. A.; Murphy, A.; Bezryadin, A.; Gol'tsman, G. N. | ||||
| Title | Superconductivity in highly disordered NbN nanowires | Type | Journal Article | ||
| Year | 2016 | Publication | Nanotechnol. | Abbreviated Journal | Nanotechnol. |
| Volume | 27 | Issue | 47 | Pages | 47lt02 (1 to 8) |
| Keywords | NbN nanowires | ||||
| Abstract |
The topic of superconductivity in strongly disordered materials has attracted significant attention. These materials appear to be rather promising for fabrication of various nanoscale devices such as bolometers and transition edge sensors of electromagnetic radiation. The vividly debated subject of intrinsic spatial inhomogeneity responsible for the non-Bardeen-Cooper-Schrieffer relation between the superconducting gap and the pairing potential is crucial both for understanding the fundamental issues of superconductivity in highly disordered superconductors, and for the operation of corresponding nanoelectronic devices. Here we report an experimental study of the electron transport properties of narrow NbN nanowires with effective cross sections of the order of the debated inhomogeneity scales. The temperature dependence of the critical current follows the textbook Ginzburg-Landau prediction for the quasi-one-dimensional superconducting channel I c approximately (1-T/T c)(3/2). We find that conventional models based on the the phase slip mechanism provide reasonable fits for the shape of R(T) transitions. Better agreement with R(T) data can be achieved assuming the existence of short 'weak links' with slightly reduced local critical temperature T c. Hence, one may conclude that an 'exotic' intrinsic electronic inhomogeneity either does not exist in our structures, or, if it does exist, it does not affect their resistive state properties, or does not provide any specific impact distinguishable from conventional weak links. | ||||
| Address | National Research University Higher School of Economics, Moscow Institute of Electronics and Mathematics,109028, Moscow, Russia. P L Kapitza Institute for Physical Problems RAS, Moscow, 119334, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
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| ISSN | 0957-4484 | ISBN | Medium | ||
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| Notes | PMID:27782000 | Approved | no | ||
| Call Number | Serial | 1332 | |||
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