| Records |
| Author |
Kawakami, A; Saito, S.; Hyodo, M. |
| Title |
Fabrication of nano-antennas for superconducting Infrared detectors |
Type |
Journal Article |
| Year |
2011 |
Publication |
IEEE Trans. Appl. Supercond. |
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| Volume |
21 |
Issue |
3 |
Pages |
632-635 |
| Keywords |
optical antennas, NbN/MgO/NbN/TiN/Al HEB, dipole antennas, IR, infrared |
Abstract  |
To improve the response performance of superconducting infrared detectors, we have developed a fabrication process for nano-antennas. A nano-antenna consists of a dipole antenna, and a superconducting thin film strip placed in the antenna's center. By measuring the transition temperature of the superconducting strips, we confirmed that their superconductivity maintained a good condition after the nano-antenna fabrication process. We also evaluated nano-antenna characteristics using Fourier transform infrared spectroscopy. The evaluated antenna length and width were respectively set at around 2400 nm and 400 nm, and the antennas were placed at intervals of several micrometers around the area of 1 mm2 . In an evaluation of spectral transmission characteristics, clear absorption caused by antenna effects was observed at around 1400 cm-1. High polarization dependencies were also observed. |
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761 |
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Parrott, Edward P. J.; Zeitler, J. Axel; Fris<cc><152>c<cc><152>ic<cc><81>, Tomislav; Pepper, Michael; Jones, William; Day, Graeme M.; Gladden, Lynn F. |
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Testing the sensitivity of terahertz spectroscopy to changes in molecular and supramolecular structure: a study of structurally similar cocrystals |
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Journal Article |
| Year |
2009 |
Publication |
Crystal Growth & Design |
Abbreviated Journal |
Crystal Growth & Design |
| Volume |
9 |
Issue |
3 |
Pages |
1452-1460 |
| Keywords |
supramolecular recognition, infrared, terahertz, IR, THz, TDS |
| Abstract |
Terahertz time-domain-spectroscopy (THz-TDS) has emerged as a versatile spectroscopic technique, and an alternative to powder X-ray diffraction in the characterization of molecular crystals. We tested the ability of terahertz spectroscopy to distinguish between chiral and racemic hydrogen-bonded cocrystals that are similar in molecular and supramolecular structure. Terahertz spectroscopy readily distinguished between the isostructural cocrystals of theophylline with chiral and racemic forms of malic acid which are almost identical in molecular structure and supramolecular architecture. Similarly, the cocrystals of theophylline with chiral and racemic forms of tartaric acid, which are similar at the molecular level but dissimilar in crystal packing, were distinguished unequivocally. The investigation of the same cocrystals using X-ray powder diffraction and Raman spectroscopy suggested that THz-TDS is comparable in sensitivity to diffraction methods and more sensitive than Raman spectroscopy to changes in cocrystal architecture. The differences in spectra acquired by THz-TDS could be further enhanced by cooling the samples to 109 K. |
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1528-7483 |
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567 |
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Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried |
| Title |
Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers |
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Journal Article |
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2011 |
Publication |
Nanoscale Research Letters |
Abbreviated Journal |
Nanoscale res lett |
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6 |
Issue |
1 |
Pages |
6 |
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Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes |
| Abstract |
Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV. |
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RPLAB @ gujma @ |
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712 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
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Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
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Conference Article |
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2003 |
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CLEO/QELS |
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CLEO/QELS |
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Cmv4 |
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NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
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Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1518 |
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Tretyakov, I.; Svyatodukh, S.; Perepelitsa, A.; Ryabchun, S.; Kaurova, N.; Shurakov, A.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. |
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Ag2S QDs/Si heterostructure-based ultrasensitive SWIR range detector |
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Journal Article |
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2020 |
Publication |
Nanomaterials (Basel) |
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Nanomaterials (Basel) |
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10 |
Issue |
5 |
Pages |
1-12 |
| Keywords |
detector; quantum dots; short-wave infrared range; silicon |
| Abstract |
In the 20(th) century, microelectronics was revolutionized by silicon-its semiconducting properties finally made it possible to reduce the size of electronic components to a few nanometers. The ability to control the semiconducting properties of Si on the nanometer scale promises a breakthrough in the development of Si-based technologies. In this paper, we present the results of our experimental studies of the photovoltaic effect in Ag2S QD/Si heterostructures in the short-wave infrared range. At room temperature, the Ag2S/Si heterostructures offer a noise-equivalent power of 1.1 x 10(-10) W/ radicalHz. The spectral analysis of the photoresponse of the Ag2S/Si heterostructures has made it possible to identify two main mechanisms behind it: the absorption of IR radiation by defects in the crystalline structure of the Ag2S QDs or by quantum QD-induced surface states in Si. This study has demonstrated an effective and low-cost way to create a sensitive room temperature SWIR photodetector which would be compatible with the Si complementary metal oxide semiconductor technology. |
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Laboratory of nonlinear optics, Zavoisky Physical-Technical Institute of the Russian Academy of Sciences, Kazan 420029, Russia |
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English |
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2079-4991 |
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PMID:32365694; PMCID:PMC7712218 |
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1151 |
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