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Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. |
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Title |
Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light |
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Journal Article |
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Year |
1992 |
Publication |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
Abbreviated Journal |
Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
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5 |
Issue |
5 |
Pages |
955-960 |
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Keywords |
NbN HEB detectors |
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Abstract  |
Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect. |
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Russian |
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0131-5366 |
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1670 |
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Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. |
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Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum |
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Journal Article |
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Year |
1987 |
Publication |
JETP Lett. |
Abbreviated Journal |
JETP Lett. |
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Volume |
46 |
Issue |
5 |
Pages |
237-238 |
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Keywords |
YBCO HTS detectors |
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For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. |
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1703 |
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Dube, I.; Jiménez, D.; Fedorov, G.; Boyd, A.; Gayduchenko, I.; Paranjape, M.; Barbara, P. |
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Title |
Understanding the electrical response and sensing mechanism of carbon-nanotube-based gas sensors |
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Journal Article |
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Year |
2015 |
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Carbon |
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Carbon |
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87 |
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330-337 |
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Keywords |
carbon nanotubes, CNT detectors, field effect transistors, FET |
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Abstract |
Gas sensors based on carbon nanotube field effect transistors (CNFETs) have outstanding sensitivity compared to existing technologies. However, the lack of understanding of the sensing mechanism has greatly hindered progress on calibration standards and customization of these nano-sensors. Calibration requires identifying fundamental transistor parameters and establishing how they vary in the presence of a gas. This work focuses on modeling the electrical response of CNTFETs in the presence of oxidizing (NO2) and reducing (NH3) gases and determining how the transistor characteristics are affected by gas-induced changes of contact properties, such as the Schottky barrier height and width, and by the doping level of the nanotube. From the theoretical fits of the experimental transfer characteristics at different concentrations of NO2 and NH3, we find that the CNTFET response can be modeled by introducing changes in the Schottky barrier height. These changes are directly related to the changes in the metal work function of the electrodes that we determine experimentally, independently, with a Kelvin probe. Our analysis yields a direct correlation between the ON – current and the changes in the electrode metal work function. Doping due to molecules adsorbed at the carbon-nanotube/metal interface also affects the transfer characteristics. |
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0008-6223 |
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1778 |
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Author |
Korneeva, Yuliya; Florya, Irina; Vdovichev, Sergey; Moshkova, Mariya; Simonov, Nikita; Kaurova, Natalia; Korneev, Alexander; Goltsman, Gregory |
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Title |
Comparison of hot-spot formation in NbN and MoN thin superconducting films after photon absorption |
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Conference Article |
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Year |
2017 |
Publication |
IEEE Transactions on Applied Superconductivity |
Abbreviated Journal |
IEEE Transactions on Applied Superconductiv |
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27 |
Issue |
4 |
Pages |
5 |
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Keywords |
Thin film devices, Superconducitng photoncounting devices, Nanowire single-photon detectors |
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Abstract |
In superconducting single-photon detectors SSPD
the efficiency of local suppression of superconductivity and hotspot
formation is controlled by diffusivity and electron-phonon
interaction time. Here we selected a material, 3.6-nm-thick MoNx
film, which features diffusivity close to those of NbN traditionally
used for SSPD fabrication, but with electron-phonon interaction
time an order of magnitude larger. In MoNx detectors we study
the dependence of detection efficiency on bias current, photon
energy, and strip width and compare it with NbN SSPD. We
observe non-linear current-energy dependence in MoNx SSPD
and more pronounced plateaus in dependences of detection
efficiency on bias current which we attribute to longer electronphonon
interaction time. |
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no |
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RPLAB @ kovalyuk @ |
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1114 |
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Author |
Goltsman, G. N. |
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Title |
Ultrafast nanowire superconducting single-photon detector with photon number resolving capability |
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Conference Article |
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Year |
2009 |
Publication |
Proc. SPIE |
Abbreviated Journal |
Proc. SPIE |
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7236 |
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72360D (1 to 11) |
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Keywords |
PNR NbN SSPD, SNSPD, superconducting single-photon detectors, photon number resolving detectors, ultrathin NbN films |
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Abstract |
In this paper we present a review of the state-of-the-art superconducting single-photon detector (SSPD), its characterization and applications. We also present here the next step in the development of SSPD, i.e. photon-number resolving SSPD which simultaneously features GHz counting rate. We have demonstrated resolution up to 4 photons with quantum efficiency of 2.5% and 300 ps response pulse duration providing very short dead time. |
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SPIE |
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Arakawa, Y.; Sasaki, M.; Sotobayashi, H. |
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1403 |
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Author |
Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. |
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Title |
A microwave reflection readout scheme for hot electron bolometric direct detector |
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Journal Article |
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2015 |
Publication |
IEEE Trans. THz Sci. Technol. |
Abbreviated Journal |
IEEE Trans. THz Sci. Technol. |
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5 |
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81-84 |
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HEB detectors |
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In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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RPLAB @ atomics90 @ |
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950 |
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Author |
Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K. |
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Achieving high counting rates in superconducting nanowire single-photon detectors |
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Conference Article |
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2006 |
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CLEO/QELS |
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CLEO/QELS |
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JTuD3 (1 to 2) |
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SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors |
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Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies |
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1451 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
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Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
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Conference Article |
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2003 |
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CLEO/QELS |
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CLEO/QELS |
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Cmv4 |
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NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
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Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1518 |
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Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
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Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
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Conference Article |
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1993 |
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Proc. SPIE |
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Proc. SPIE |
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2104 |
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183-184 |
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YBCO HTS HEB detectors |
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Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 |
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10.1117/12.2298489 |
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1653 |
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Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried |
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Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers |
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2011 |
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Nanoscale Research Letters |
Abbreviated Journal |
Nanoscale res lett |
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6 |
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1 |
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6 |
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Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes |
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Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV. |
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RPLAB @ gujma @ |
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712 |
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