| Records |
| Author |
Kahl, O.; Ferrari, S.; Kovalyuk, V.; Vetter, A.; Lewes-Malandrakis, G.; Nebel, C.; Korneev, A.; Goltsman, G.; Pernice, W. |
| Title |
Spectrally resolved single-photon imaging with hybrid superconducting – nanophotonic circuits |
Type |
Miscellaneous |
| Year |
2016 |
Publication |
arXiv |
Abbreviated Journal |
arXiv |
| Volume |
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Issue |
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Pages |
1-20 |
| Keywords |
waiveguide SSPD, SNSPD, imaging |
Abstract  |
The detection of individual photons is an inherently binary mechanism, revealing either their absence or presence while concealing their spectral information. For multi-color imaging techniques, such as single photon spectroscopy, fluorescence resonance energy transfer microscopy and fluorescence correlation spectroscopy, wavelength discrimination is essential and mandates spectral separation prior to detection. Here, we adopt an approach borrowed from quantum photonic integration to realize a compact and scalable waveguide-integrated single-photon spectrometer capable of parallel detection on multiple wavelength channels, with temporal resolution below 50 ps and dark count rates below 10 Hz. We demonstrate multi-detector devices for telecommunication and visible wavelengths and showcase their performance by imaging silicon vacancy color centers in diamond nanoclusters. The fully integrated hybrid superconducting-nanophotonic circuits enable simultaneous spectroscopy and lifetime mapping for correlative imaging and provide the ingredients for quantum wavelength division multiplexing on a chip. |
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no |
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1334 |
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| Author |
Elezov, M. S.; Semenov, A. V.; An, P. P.; Tarkhov, M. A.; Goltsman, G. N.; Kardakova, A. I.; Kazakov, A. Y. |
| Title |
Investigating the detection regimes of a superconducting single-photon detector |
Type |
Journal Article |
| Year |
2013 |
Publication |
J. Opt. Technol. |
Abbreviated Journal |
J. Opt. Technol. |
| Volume |
80 |
Issue |
7 |
Pages |
435 |
| Keywords |
SSPD, quantum efficiency |
| Abstract |
The detection regimes of a superconducting single-photon detector have been investigated. A technique is proposed for determining the regions in which “pure regimes” predominate. Based on experimental data, the dependences of the internal quantum efficiency on the bias current are determined in the one-, two-, and three-photon detection regimes. |
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| ISSN |
1070-9762 |
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no |
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Serial |
1172 |
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| Author |
Ozhegov, R. V.; Gorshkov, K. N.; Vachtomin, Y. B.; Smirnov, K. V.; Finkel, M. I.; Goltsman, G. N.; Kiselev, O. S.; Kinev, N. V.; Filippenko, L. V.; Koshelets, V. P. |
| Title |
Terahertz imaging system based on superconducting heterodyne integrated receiver |
Type |
Conference Article |
| Year |
2014 |
Publication |
Proc. THz and Security Applications |
Abbreviated Journal |
Proc. THz and Security Applications |
| Volume |
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Issue |
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Pages |
113-125 |
| Keywords |
SIS mixer, SIR, THz imaging |
| Abstract |
The development of terahertz imaging instruments for security systems is on the cutting edge of terahertz technology. We are developing a THz imaging system based on a superconducting integrated receiver (SIR). An SIR is a new type of heterodyne receiver based on an SIS mixer integrated with a flux-flow oscillator (FFO) and a harmonic mixer which is used for phase-locking the FFO. Employing an SIR in an imaging system means building an entirely new instrument with many advantages compared to traditional systems.
In this project we propose a prototype THz imaging system using an 1 pixel SIR and 2D scanner. At a local oscillator frequency of 500 GHz the best noise equivalent temperature difference (NETD) of the SIR is 10 mK at an integration time of 1 s and a detection bandwidth of 4 GHz. The scanner consists of two rotating flat mirrors placed in front of the antenna consisting of a spherical primary reflector and an aspherical secondary reflector. The diameter of the primary reflector is 0.3 m. The operating frequency of the imaging system is 600 GHz, the frame rate is 0.1 FPS, the scanning area is 0.5 × 0.5 m2, the image resolution is 50 × 50 pixels, the distance from an object to the scanner was 3 m. We have obtained THz images with a spatial resolution of 8 mm and a NETD of less than 2 K. |
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Springer Netherlands |
Place of Publication |
Dordrecht |
Editor |
Corsi, C.; Sizov, F. |
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978-94-017-8828-1 |
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no |
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1368 |
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| Author |
Shurakov, A.; Lobanov, Y.; Goltsman, G. |
| Title |
Superconducting hot-electron bolometer: from the discovery of hot-electron phenomena to practical applications |
Type |
Journal Article |
| Year |
2015 |
Publication |
Supercond. Sci. Technol. |
Abbreviated Journal |
Supercond. Sci. Technol. |
| Volume |
29 |
Issue |
2 |
Pages |
023001 |
| Keywords |
HEB |
| Abstract |
The discovery of hot-electron phenomena in a thin superconducting film in the last century was followed by numerous experimental studies of its appearance in different materials aiming for a better understanding of the phenomena and consequent implementation of terahertz detection systems for practical applications. In contrast to the competitors such as superconductor-insulator-superconductor tunnel junctions and Schottky diodes, the hot electron bolometer (HEB) did not demonstrate any frequency limitation of the detection mechanism. The latter, in conjunction with a decent performance, rapidly made the HEB mixer the most attractive candidate for heterodyne observations at frequencies above 1 THz. The successful operation of practical instruments (the Heinrich Hertz Telescope, the Receiver Lab Telescope, APEX, SOFIA, Hershel) ensures the importance of the HEB technology despite the lack of rigorous theoretical routine for predicting the performance. In this review, we provide a summary of experimental and theoretical studies devoted to understanding the HEB physics, and an overview of various fabrication routes and materials. |
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0953-2048 |
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no |
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1156 |
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Nikoghosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. |
| Title |
Effect of absorption on the efficiency of THz radiation generation in a nonlinear crystal placed into a waveguide |
Type |
Journal Article |
| Year |
2018 |
Publication |
Armenian J. Phys. |
Abbreviated Journal |
Armenian J. Phys. |
| Volume |
11 |
Issue |
4 |
Pages |
257-262 |
| Keywords |
THz, waveguide, nonlinear crystal |
| Abstract |
The effect of THz radiation absorption on the efficiency of generation of coherent THz radiation in a nonlinear optical crystal placed into a metal rectangular waveguide is studied. The efficiency of the nonlinear conversion of optical laser radiation to the THz band is also a function of the phase-matching (PM) condition inside the nonlinear crystal. The method of partial filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. Phase matching was obtained by the proper choice of the thickness of the nonlinear crystal, namely the degree of partial filling of the waveguide. We have studied the THz radiation attenuation caused by the losses in both the metal walls of the waveguide and in the crystal, taking into account the dimension of the cross section of the waveguide, the degree of partial filling and its dielectric constant. |
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| ISSN |
1829-1171 |
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no |
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1291 |
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| Author |
Kovaluyk, V.; Lazarenko, P.; Kozyukhin, S.; An, P.; Prokhodtsov, A.; Goltsman, G.; Sherchenkov, A. |
| Title |
Influence of the phase state of Ge2Sb2Te5 thin cover on the parameters of the optical waveguide structures |
Type |
Abstract |
| Year |
2019 |
Publication |
Proc. Amorphous and Nanostructured Chalcogenides |
Abbreviated Journal |
Proc. Amorphous and Nanostructured Chalcogenides |
| Volume |
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Issue |
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Pages |
47-48 |
| Keywords |
optical waveguides |
| Abstract |
The fast switching time of Ge-Sb-Te thin films between amorphous and crystalline states initiated by laser beam as well as significant change of their optical properties and the preservation of metastable states for tens of years open wide perspectives for the application of these materials to fully optical devices [1], including high-speed optical memory [2]. Here we study optical properties of the Ge2Sb2Te5 (GST225) thin films integrated with on-chip silicon nitride O-ring resonator. The rib waveguide of the resonator was formed the first stage of e-beam lithography and subsequent reactive-ion etching. We used the second stage of e-beam lithography combining with lift-off method for the formation of GST225 active region on the resonator ring surface. The amorphous GST225 thin films were prepared by magnetron sputtering, and were capped by thin silicon oxide on their tops. The length of the GST225 active region varied from 0.1 to 20 μ m. Crystallization of amorphous thin films was carried out at the temperature of 400 °C for 30 minutes. Auger electron spectroscopy and transmission electron microscopy were used for studying composition and structure of investigated GST225thin films, respectively. It was observed that crystallization of amorphous GST225 film lead to a decrease of the optical power, transmitted through the waveguide. Comparison of the optical transmittance of O-ring resonators before and after the GST225 deposition allowed to identify the change in the Q-factor and the wavelength peak shift. This can be explained by the differences of the complex refractive indexes of GST225 thin films in the amorphous and crystalline states. From the measurement data, the GST225 effective refractive index was extracted depending on the ring waveguide width of the resonator for a telecommunication wavelength of 1550 nm. |
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Technical University of Moldova |
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Poster |
Approved |
no |
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Serial |
1281 |
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| Author |
Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
| Title |
Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
Type |
Journal Article |
| Year |
2020 |
Publication |
J. Luminescence |
Abbreviated Journal |
J. Luminescence |
| Volume |
220 |
Issue |
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Pages |
117008 (1 to 7) |
| Keywords |
Ag2S QD, quantum dots |
| Abstract |
The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. |
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0022-2313 |
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no |
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1267 |
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| Author |
Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
| Title |
Fast-response superconducting electron bolometer |
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Journal Article |
| Year |
1989 |
Publication |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
Abbreviated Journal |
Pisma v Zhurnal Tekhnicheskoi Fiziki |
| Volume |
15 |
Issue |
3 |
Pages |
88-92 |
| Keywords |
Nb HEB |
| Abstract |
The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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Russian |
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no |
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1694 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
| Title |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
Type |
Conference Article |
| Year |
2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
132 |
Issue |
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Pages |
02001 (1 to 2) |
| Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
| Abstract |
The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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no |
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Serial |
1328 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
| Title |
Technology for NbN HEB based multipixel matrix of THz range |
Type |
Conference Article |
| Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
| Volume |
195 |
Issue |
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Pages |
05011 |
| Keywords |
NbN HEB |
| Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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no |
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1318 |
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