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	Author	Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A.
	Title	Technology for NbN HEB based multipixel matrix of THz range			Type	Conference Article
	Year	2018	Publication	EPJ Web Conf.	Abbreviated Journal	EPJ Web Conf.
	Volume	195	Issue		Pages	05011
	Keywords	NbN HEB
	Abstract	The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices.
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	Series Volume		Series Issue		Edition
	ISSN	2100-014X	ISBN		Medium
	Area		Expedition		Conference
	Notes				Approved	no
	Call Number				Serial	1318
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