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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mel'nikov, A. P. | ||||
| Title | Binding energy of a carrier with a neutral impurity atom in germanium and in silicon | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 5 | Pages | 185-186 |
| Keywords | Ge, Si, neutral impurity atom, binding energy | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1739 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N. | ||||
| Title | Transitions of electrons between excited states of donors in germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 2 | Pages | 63-65 |
| Keywords | Ge, donors, excited states | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1740 | |||
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| Author | Gershenzon, E. M.; Goltsman, G.; Orlova, S.; Ptitsina, N.; Gurvich, Y. | ||||
| Title | Germanium hot-electron narrow-band detector | Type | Journal Article | ||
| Year | 1971 | Publication | Sov. Radio Engineering And Electronic Physics | Abbreviated Journal | Sov. Radio Engineering And Electronic Physics |
| Volume | 16 | Issue | 8 | Pages | 1346 |
| Keywords | Ge HEB detectors | ||||
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| Publisher | Scripps Clinic Res Foundation 476 Prospect St, La Jolla, Ca 92037 | Place of Publication | Editor | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1741 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Emtsev, V. V.; Mashovets, T. V.; Ptitsyna, N. G.; Ryvkin, S. M. | ||||
| Title | Role of impurities of groups III and V in the formation of defects following γ irradiation of germanium | Type | Journal Article | ||
| Year | 1971 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 14 | Issue | 6 | Pages | 241 |
| Keywords | Ge, gamma irradiation, defects, impurities | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1742 | |||
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| Author | Гершензон, Е. М.; Семенов, И. Т.; Фогельсон, М. С. | ||||
| Title | Спин-решеточная релаксация доноров фосфора в кремнии при одноосной деформации образца | Type | Journal Article | ||
| Year | 1985 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 19 | Issue | 9 | Pages | 1696-1698 |
| Keywords | uniaxial pressure, Ge, phosphorus donors, spin-lattice relaxation | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1760 | |||
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| Author | Банная, В. Ф.; Веселова, Л. И.; Гершензон, Е. М. | ||||
| Title | Об одном способе определения концентрации глубоких примесей в германии | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1896-1898 |
| Keywords | Ge, deep impurities | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1762 | |||
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| Author | Гершензон, Е. М.; Литвак-Горская, Л. Б.; Рабинович, Р. И. | ||||
| Title | Отрицательное магнитосопротивление в случае проводимости по верхней зоне Хаббарда | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 10 | Pages | 1873-1876 |
| Keywords | compensated n-InSb, Hubbard upper zone conductivity, negative magnetoresistance | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1763 | |||
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| Author | Гершензон, Е. М.; Мельников, А. П.; Рабинович, Р. И.; Смирнова, В. Б. | ||||
| Title | О возможности создания инверсной функции распределения свободных носителей в полупроводниках при захвате на мелкие нейтральные примеси | Type | Journal Article | ||
| Year | 1983 | Publication | Физика и техника полупроводников | Abbreviated Journal | Физика и техника полупроводников |
| Volume | 17 | Issue | 3 | Pages | 499-501 |
| Keywords | shallow neutral impurities, capture, inverse distribution function, Si | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1764 | |||
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| Author | Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Scattering of electrons by charged impurities in Ge under cyclotron resonance conditions | Type | Journal Article | ||
| Year | 1976 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 10 | Issue | Pages | 1379-1383 | |
| Keywords | Ge, cyclotron resonance, charged impurities, | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1772 | |||
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| Author | Gershenzon, E. M.; Orlov, L. A.; Ptitsina, N. G. | ||||
| Title | Absorption spectra in electron transitions between excited states of impurities in germanium | Type | Journal Article | ||
| Year | 1975 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 22 | Issue | 4 | Pages | 95-97 |
| Keywords | Ge, impurities, excited states, absorption spectra | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1773 | |||
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| Author | Bondarenko, O. I.; Gershenzon, E. M.; Gurvich, Y. A.; Orlova, S. L.; Ptitsina, N. G. | ||||
| Title | Measurement of the width of the cyclotron resonance line of n-type Ge in quantizing magnetic fields | Type | Journal Article | ||
| Year | 1972 | Publication | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников | Abbreviated Journal | Presumably: Sov. Phys. Semicond. | Физика и техника полупроводников |
| Volume | 6 | Issue | Pages | 362-363 | |
| Keywords | Ge, cyclotron resonance, quantizing magnetic fields | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1774 | |||
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| Author | Райтович, А. А.; Пентин, И. В.; Золотов, Ф. И.; Селезнев, В. А.; Вахтомин, Ю. Б.; Смирнов, К. В. | ||||
| Title | Время энергетической релаксации электронов в сверхпроводниковых VN наноструктурах | Type | Conference Article | ||
| Year | 2018 | Publication | Сборник трудов 13 Всероссийской конференции молодых ученых | Abbreviated Journal | |
| Volume | Issue | Pages | 236-238 | ||
| Keywords | VN films | ||||
| Abstract |
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| Address | Саратовский филиал ИРЭ им. В.А. Котельникова РАН | ||||
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| Publisher | Техно-Декор | Place of Publication | Editor | ||
| Language | Russian | Summary Language | Original Title | ||
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| Area | Expedition | Conference | Наноэлектроника, нанофотоника и нелинейная физика | ||
| Notes | http://nnnph.ru/data/documents/Sborni-trudov-NNNF-2018.pdf | Approved | no | ||
| Call Number | Serial | 1807 | |||
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| Author | Lobanov, Y. V.; Vakhtomin, Y. B.; Pentin, I. V.; Khabibullin, R. A.; Shchavruk, N. V.; Smirnov, K. V.; Silaev, A. A. | ||||
| Title | Characterization of the THz quantum cascade laser using fast superconducting hot electron bolometer | Type | Journal Article | ||
| Year | 2018 | Publication | EPJ Web Conf. | Abbreviated Journal | EPJ Web Conf. |
| Volume | 195 | Issue | Pages | 04004 (1 to 2) | |
| Keywords | NbN HEB, QCL | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2100-014X | ISBN | Medium | ||
| Area | Expedition | Conference | 3rd International Conference “Terahertz and Microwave Radiation: Generation, Detection and Applications” (TERA-2018) | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1808 | |||
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| Author | Смирнов, К. В. | ||||
| Title | AlGaAs/GaAs смеситель на эффекте разогрева двумерных электронов для тепловизора субмиллиметрового диапазона | Type | Abstract | ||
| Year | 2003 | Publication | Тезисы докладов VI Российской конференции по физике полупроводников | Abbreviated Journal | |
| Volume | Issue | Pages | 181 | ||
| Keywords | 2DEG, AlGaAs/GaAs heterostructures, mixer | ||||
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| Address | ФТИ им. А. Ф. Иоффе, Санк-Петербург | ||||
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| Area | Expedition | Conference | VI Российской конференции по физике полупроводников (27-31 октября) | ||
| Notes | Unconfirmed; Сама конференция, однако, была -- её упоминают: [http://www.nsc.ru/HBC/article.phtml?nid=271&id=17], [https://www.isp.nsc.ru/institut/nauchnye-podrazdeleniya/lab-20/publikatsii/2003], [http://www.ioffe.ru/sem_tech/sem%5Fteh%5Fmovpe%5Fpublications%5Fru.htm#R2003], [https://istina.ips.ac.ru/collections/828771/] | Approved | no | ||
| Call Number | Serial | 1837 | |||
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| Author | Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J. M.; Delorme, Y.; Feret, A.; Hübers, H. W.; Semenov, A. D.; Gol'tsman, G. N. | ||||
| Title | 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 6275 | Issue | Pages | 62750I (1 to 11) | |
| Keywords | HEB, mixer, membrane | ||||
| Abstract |
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5 µm thick Si3N4/SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4/SiO2 membranes was found to be 0.7÷0.9 GHz, which is much smaller than for similar devices on silicon. Application of buffer layers and use of alternative types of membranes (e.g. silicon-on-insulator) is under investigation. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 561 | |||
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| Author | Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A. D.; Gol’tsman, G. N. | ||||
| Title | 2.5 THz multipixel heterodyne receiver based on NbN HEB mixers | Type | Abstract | ||
| Year | 2007 | Publication | Proc. 18th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 18th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 112 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract |
A 16 pixel heterodyne receiver for 2.5 THz has been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Spherical mirrors (one per pixel) and backshort distance from the antenna have been used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. Measurements of the mixers sensitivity and the input RF band are presented, and compared against calculations. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1419 | |||
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| Author | Cherednichenko, S.; Drakinskiy, V.; Lecomte, B.; Dauplay, F.; Krieg, J.-M.; Delorme, Y.; Feret, A.; Hübers, H.-W.; Semenov, A.D.; Gol’tsman, G.N. | ||||
| Title | Terahertz heterodyne array based on NbN HEB mixers | Type | Abstract | ||
| Year | 2008 | Publication | Proc. 19th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | |
| Volume | Issue | Pages | 43 | ||
| Keywords | NbN HEB mixers array | ||||
| Abstract |
A 16 pixel heterodyne receiver for 2.5 THz is been developed based on NbN superconducting hot-electron bolometer (HEB) mixers. The receiver uses a quasioptical RF coupling approach where HEB mixers are integrated into double dipole antennas on 1.5μm thick Si3N4 / SiO2 membranes. Miniature mirrors (one per pixel) and back short for the antenna were used to design the output mixer beam profile. The camera design allows all 16 pixel IF readout in parallel. The gain bandwidth of the HEB mixers on Si3N4 / SiO 2 membranes was found to be about 3 GHz, when an MgO buffer layers is applied on the membrane. We will also present the progress in the camera heterodyne tests. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1411 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Mirskii, G. I. | ||||
| Title | Submillimeter backward-wave-tube spectrometer-relaxometer | Type | Journal Article | ||
| Year | 1987 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | 30 | Issue | 4 | Pages | 131-137 |
| Keywords | BWO, applications | ||||
| Abstract |
A backward-wave-tube (BWT) spectrometer-relaxometer is described that is designed for study of the relaxation characteristics of photoconductors in the wavelength range of 2-0.25 mm – in particular, to measure the relaxation times of the submillimeter photoconductivity of germanium in the range of 10[sup:-4]-10[sup:-9] sec and to determine from these data the concentration of compensating impurities of from 10[sup:10] to 10[sup:14] cm[sup:-3]. The instrument uses the beats of the oscillations of two BWTs and records the amplitude-frequency response of the specimen with variation of the beat frequency from 10[sup:4] to 10[sup:8] Hz with accumulation of the desired signal for less than or equal to1 sec by means of a quadrature synchronous detector. The beat frequency is stabilized and the quadrature voltages of the synchronous detector are formed by means of phase-locked loops. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1699 | |||
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| Author | Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. | ||||
| Title | Erratum: “Single photon experiments at telecom wavelengths using nanowire superconducting detectors” [Appl. Phys. Lett. 91, 031106 (2007)] | Type | Journal Article | ||
| Year | 2010 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 96 | Issue | 8 | Pages | 089901 |
| Keywords | SSPD, SNSPD, erratum | ||||
| Abstract |
A calculation error was made in the original publication of this letter. The error was in the calculation of the noise equivalent power (NEP) values for the avalanche photodiode detector (APD) and the superconducting single photon detector (SSPD), the incorrect values were plotted on the right axis in Fig. 1(b). The correct NEP values were calculated with the same equation reported in the original letter and the revised Fig. 1(b) is shown below. The other conclusions of the paper remain unaltered. | ||||
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| ISSN | 0003-6951 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1395 | |||
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| Author | Il’in, K.S.; Ptitsina, N.G.; Sergeev, A.V.; Gol’tsman, G.N.; Gershenzon, E.M.; Karasik, B.S.; Pechen, E.V.; Krasnosvobodtsev, S.I. | ||||
| Title | Interrelation of resistivity and inelastic electron-phonon scattering rate in impure NbC films | Type | Journal Article | ||
| Year | 1998 | Publication | Phys. Rev. B | Abbreviated Journal | Phys. Rev. B |
| Volume | 57 | Issue | 24 | Pages | 15623-15628 |
| Keywords | NbC films | ||||
| Abstract |
A complex study of the electron-phonon interaction in thin NbC films with electron mean free path l=2–13nm gives strong evidence that electron scattering is significantly modified due to the interference between electron-phonon and elastic electron scattering from impurities. The interference T2 term, which is proportional to the residual resistivity, dominates over the Bloch-Grüneisen contribution to resistivity at low temperatures up to 60 K. The electron energy relaxation rate is directly measured via the relaxation of hot electrons heated by modulated electromagnetic radiation. In the temperature range 1.5–10 K the relaxation rate shows a weak dependence on the electron mean free path and strong temperature dependence ∼Tn, with the exponent n=2.5–3. This behavior is explained well by the theory of the electron-phonon-impurity interference taking into account the electron coupling with transverse phonons determined from the resistivity data. | ||||
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| ISSN | 0163-1829 | ISBN | Medium | ||
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| Notes | Approved | no | |||
| Call Number | Serial | 1585 | |||
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| Author | Gershenzon, E. M.; Il'in, V. A.; Litvak-Gorskaya, L. B.; Filonovich, S. R. | ||||
| Title | Character of submillimeter photoconductivity in n-lnSb | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 49 | Issue | 1 | Pages | 121-128 |
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| Abstract |
A comprehensive investigation was made of the submillimeter photoconductivity of n -1nSb in the range of wavelengths L = 0.6-8 mm, magnetic fields H = 0-30 kOe, electric fields E = 0.01-0.5 V/cm, and temperatures T = 1.3-30 K. The kinetics of the photoconductivity processes as a function of T, E; and H is investigated. It is shown that impurity photoconductivity does exist for any degree of compensation of extremely purified n-InSb. Particular attention is paid to the hopping photoconductivity realized in strongly compensated n-1nSb (K > 0.8). | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ phisix @ | Serial | 985 | ||
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| Author | Svechnikov, S. I.; Okunev, O. V.; Yagoubov, P. A.; Gol'tsman, G. N.; Voronov, B. M.; Cherednichenko, S. I.; Gershenzon, E. M.; Gerecht, E.; Musante, C. F.; Wang, Z.; Yngvesson, K. S. | ||||
| Title | 2.5 THz NbN hot electron mixer with integrated tapered slot antenna | Type | Journal Article | ||
| Year | 1997 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 7 | Issue | 2 | Pages | 3548-3551 |
| Keywords | NbN HEB mixers | ||||
| Abstract |
A Hot Electron Bolometer (HEB) mixer for 2.5 THz utilizing a NbN thin film device, integrated with a Broken Linearly Tapered Slot Antenna (BLTSA), has been fabricated and is presently being tested. The NbN HEB device and the antenna were fabricated on a SiO2membrane. A 0.5 micrometer thick SiO2layer was grown by rf magnetron reactive sputtering on a GaAs wafer. The HEB device (phonon-cooled type) was produced as several parallel strips, 1 micrometer wide, from an ultrathin NbN film 4-7 nm thick, that was deposited onto the SiO2layer by dc magnetron reactive sputtering. The BLTSA was photoetched in a multilayer Ti-Au metallization. In order to strengthen the membrane, the front-side of the wafer was coated with a 5 micrometer thick polyimide layer just before the membrane formation. The last operation was anisotropic etching of the GaAs in a mixture of HNO3and H2O2. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1595 | |||
| Permanent link to this record | |||||
| Author | Cherednichenko, S.; Kroug, M.; Merkel, H.; Khosropanah, P.; Adam, A.; Kollberg, E.; Loudkov, D.; Gol'tsman, G.; Voronov, B.; Richter, H.; Huebers, H.-W. | ||||
| Title | 1.6 THz heterodyne receiver for the far infrared space telescope | Type | Journal Article | ||
| Year | 2002 | Publication | Phys. C: Supercond. | Abbreviated Journal | Phys. C: Supercond. |
| Volume | 372-376 | Issue | Pages | 427-431 | |
| Keywords | NbN HEB mixers, applications | ||||
| Abstract |
A low noise heterodyne receiver is being developed for the terahertz range using a phonon-cooled hot-electron bolometric mixer based on 3.5 nm thick superconducting NbN film. In the 1–2 GHz intermediate frequency band the double-sideband receiver noise temperature was 450 K at 0.6 THz, 700 K at 1.6 THz and 1100 K at 2.5 THz. In the 3–8 GHz IF band the lowest receiver noise temperature was 700 K at 0.6 THz, 1500 K at 1.6 THz and 3000 K at 2.5 THz while it increased by a factor of 3 towards 8 GHz. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0921-4534 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1527 | |||
| Permanent link to this record | |||||
| Author | Boyarskii, D. A.; Gershenzon, V. E.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Tikhonov, V. V.; Chulkova, G. M. | ||||
| Title | On the possibility of determining the microstructural parameters of an oil-bearing layer from radiophysical measurement data | Type | Journal Article | ||
| Year | 1996 | Publication | J. of Communications Technology and Electronics | Abbreviated Journal | J. of Communications Technology and Electronics |
| Volume | 41 | Issue | 5 | Pages | 408-414 |
| Keywords | submillimeter waves, transmission | ||||
| Abstract |
A method for the reconstruction of microstructural properties of an oil-bearing rock from the spectral dependence of the transmission factor of submillimeter waves is proposed. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1064-2269 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Радиотехника и электроника 41, no. 4 (1996): 441-447 | Approved | no | ||
| Call Number | Serial | 1611 | |||
| Permanent link to this record | |||||
| Author | Cherednichenko, S.; Khosropanah, P.; Berg, T.; Merkel, H.; Kollberg, E.; Drakinskiy, V.; Voronov, B.; Gol’tsman, G. | ||||
| Title | Optimization of HEB mixer for the Herschel Space Observatory | Type | Abstract | ||
| Year | 2004 | Publication | Proc. 15th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 15th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 16 | ||
| Keywords | NbN HEB mixers, applications | ||||
| Abstract |
A mixer development for the HIFI instrument of the Herschel Space Observatory has come to the final stage. In our paper and conference presentation we will describe the most important details of the Band 6 Low and High Mixer Unit design. Special attention will be given to the optimization of the hot- electron bolometer mixer chip, which is based on 3.5nm NbN superconducting film on silicon. As the HEB’s local oscillator power requirements depend on the bolometer size, we have compared mixer noise temperature for different bolometer width- to- length ratio. A trade- off between mixer performance and local oscillator power requirements results in the mixer units equipped with optimized mixer chips, providing the largest coverage of the Band6 RF band with the lowest possible receiver noise. A short account of the beam pattern measurements of Band6 mixers will be given as well. | ||||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1490 | |||
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| Author | Dauler, E. A.; Robinson, B. S.; Kerman, A. J.; Yang, J. K. W.; Rosfjord, E. K. M.; Anant, V.; Voronov, B.; Gol'tsman, G.; Berggren, K. K. | ||||
| Title | Multi-element superconducting nanowire single-photon detector | Type | Journal Article | ||
| Year | 2007 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 17 | Issue | 2 | Pages | 279-284 |
| Keywords | SSPD, SNSPD | ||||
| Abstract |
A multi-element superconducting nanowire single photon detector (MESNSPD) is presented that consists of multiple independently-biased superconducting nanowire single photon detector (SNSPD) elements that form a continuous active area. A two-element SNSPD has been fabricated and tested, showing no measurable crosstalk between the elements, sub-50-ps relative timing jitter, and four times the maximum counting rate of a single SNSPD with the same active area. The MESNSPD can have a larger active area and higher speed than a single-element SNSPD and the input optics can be designed so that the detector provides spatial, spectral or photon number resolution. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1428 | |||
| Permanent link to this record | |||||
| Author | Polyakova, O. N.; Tikhonov, V. V.; Dzardanov, A. L.; Boyarskii, D. A.; Gol’tsman, G. N. | ||||
| Title | Dielectric characteristics of ore minerals in a 10–40 GHz frequency range | Type | Journal Article | ||
| Year | 2008 | Publication | Tech. Phys. Lett. | Abbreviated Journal | Tech. Phys. Lett. |
| Volume | 34 | Issue | 11 | Pages | 967-970 |
| Keywords | ore minerals, complex permittivity, sphalerite, magnetite, labradorite | ||||
| Abstract |
A new approach to investigation of the complex dielectric permittivity of both nonmetallic and ore minerals in the microwave frequency range is proposed. Using this approach, data on the complex permittivity of sphalerite, magnetite, and labradorite in a 10–40 GHz frequency range have been obtained for the first time. A method is proposed for calculating the complex permittivity from experimentally measured frequency dependences of the reflection and transmission coefficients of a plane-parallel plate of a given mineral. Approximate expressions that can be used for calculations of the complex refractive index and permittivity of minerals are presented. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7850 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1406 | |||
| Permanent link to this record | |||||
| Author | Tong, C.-Y. E.; Trifonov, A.; Shurakov, A.; Blundell, R.; Gol’tsman, G. | ||||
| Title | A microwave-operated hot-electron-bolometric power detector for terahertz radiation | Type | Journal Article | ||
| Year | 2015 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 25 | Issue | 3 | Pages | 2300604 (1 to 4) |
| Keywords | NbN HEB mixer | ||||
| Abstract |
A new class of microwave-operated THz power detectors based on the NbN hot-electron-bolometer (HEB) mixer is proposed. The injected microwave signal ( 1 GHz) serves the dual purpose of pumping the HEB element and enabling the read-out of the internal state of the device. A cryogenic amplifier amplifies the reflected microwave signal from the device and a homodyne scheme recovers the effects of the incident THz radiation. Two modes of operation have been identified, depending on the level of incident radiation. For weak signals, we use a chopper to chop the incident radiation against a black body reference and a lock-in amplifier to perform synchronous detection of the homodyne readout. The voltage measured is proportional to the incident power, and we estimate an optical noise equivalent power of 5pW/ √Hz at 0.83 THz. At higher signal levels, the homodyne circuit recovers the stream of steady relaxation oscillation pulses from the HEB device. The frequency of these pulses is in the MHz frequency range and bears a linear relationship with the incident THz radiation over an input power range of 15 dB. A digital frequency counter is used to measure THz power. The applicable power range is between 1 nW and 1 μW. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1558-2515 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1354 | |||
| Permanent link to this record | |||||
| Author | Verevkin, A.; Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Chulkova, G. M.; Smirnov, K. S.; Sobolewski, R. | ||||
| Title | Direct measurements of energy relaxation times in two-dimensional structures under quasi-equilibrium conditions | Type | Conference Article | ||
| Year | 2002 | Publication | Mater. Sci. Forum | Abbreviated Journal | Mater. Sci. Forum |
| Volume | 384-3 | Issue | Pages | 107-116 | |
| Keywords | 2DEG, AlGaAs/GaAs | ||||
| Abstract |
A new microwave technique was successfully applied for direct studies of energy relaxation times in two-dimensional AlGaAs/GaAs structures under quasi-equilibrium conditions in the nanosecond and picosecond time scale. We report our results of energy relaxation time measurements in the temperature range 1.6-50 K, in quantum Hall effect regime in magnetic fields up to 4 T. | ||||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Materials Science Forum | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1536 | |||
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| Author | Men’shchikov, E. M.; Gogidze, I. G.; Sergeev, A. V.; Elant’ev, A. I.; Kuminov, P. B.; Gol’tsman, G. N.; Gershenzon, E. M. | ||||
| Title | Superconducting fast detector based on the nonequilibrium inductance response of a film of niobium nitride | Type | Journal Article | ||
| Year | 1997 | Publication | Tech. Phys. Lett. | Abbreviated Journal | Tech. Phys. Lett. |
| Volume | 23 | Issue | 6 | Pages | 486-488 |
| Keywords | NbN KID | ||||
| Abstract |
A new type of fast detector is proposed, whose operation is based on the variation of the kinetic inductance of a superconducting film caused by nonequilibrium quasiparticles created by the electromagnetic radiation. The speed of the detector is determined by the rate of multiplication of photo-excited quasiparticles, and is nearly independent of the temperature, being less than 1 ps for NbN. Models based on the Owen-Scalapino scheme give a good description of the experimentally determined dependence of the power-voltage sensitivity of the detector on the modulation frequency. The lifetime of the quasiparticles is determined, and it is shown that the reabsorption of nonequilibrium phonons by the condensate has a substantial effect even in ultrathin NbN films 5 nm thick, and results in the maximum possible quantum yield. A low concentration of equilibrium quasiparticles and a high quantum yield result in a detectivity D*=1012 W−1·Hz1/2 at a temperature T=4.2 K and D*=1016 W−1·cm· Hz1/2 at T=1.6 K. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7850 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1593 | |||
| Permanent link to this record | |||||
| Author | Gol’tsman, G.; Okunev, O.; Chulkova, G.; Lipatov, A.; Dzardanov, A.; Smirnov, K.; Semenov, A.; Voronov, B.; Williams, C.; Sobolewski, R. | ||||
| Title | Fabrication and properties of an ultrafast NbN hot-electron single-photon detector | Type | Journal Article | ||
| Year | 2001 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 11 | Issue | 1 | Pages | 574-577 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract |
A new type of ultra-high-speed single-photon counter for visible and near-infrared wavebands based on an ultrathin NbN hot-electron photodetector (HEP) has been developed. The detector consists of a very narrow superconducting stripe, biased close to its critical current. An incoming photon absorbed by the stripe produces a resistive hotspot and causes an increase in the film’s supercurrent density above the critical value, leading to temporary formation of a resistive barrier across the device and an easily measurable voltage pulse. Our NbN HEP is an ultrafast (estimated response time is 30 ps; registered time, due to apparatus limitations, is 150 ps), frequency unselective device with very large intrinsic gain and negligible dark counts. We have observed sequences of output pulses, interpreted as single-photon events for very weak laser beams with wavelengths ranging from 0.5 /spl mu/m to 2.1 /spl mu/m and the signal-to-noise ratio of about 30 dB. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1558-2515 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1547 | |||
| Permanent link to this record | |||||
| Author | Somani, S.; Kasapi, S.; Wilsher, K.; Lo, W.; Sobolewski, R.; Gol’tsman, G. | ||||
| Title | New photon detector for device analysis: Superconducting single-photon detector based on a hot electron effect | Type | Journal Article | ||
| Year | 2001 | Publication | J. Vac. Sci. Technol. B | Abbreviated Journal | J. Vac. Sci. Technol. B |
| Volume | 19 | Issue | 6 | Pages | 2766-2769 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract |
A novel superconducting single-photon detector (SSPD), intrinsically capable of high quantum efficiency (up to 20%) over a wide spectral range (ultraviolet to infrared), with low dark counts (<1 cps), and fast (<40 ps) timing resolution, is described. This SSPD has been used to perform timing measurements on complementary metal–oxide–semiconductor integrated circuits (ICs) by detecting the infrared light emission from switching transistors. Measurements performed from the backside of a 0.13 μm geometry flip–chip IC are presented. Other potential applications for this detector are in telecommunications, quantum cryptography, biofluorescence, and chemical kinetics. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0734211X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1542 | |||
| Permanent link to this record | |||||
| Author | Semenov, Alexei D.; Hübers, Heinz-Wilhelm; Richter, Heiko; Smirnov, Konstantin; Gol'tsman, Gregory N.; Voronov, Boris M. | ||||
| Title | Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers | Type | Abstract | ||
| Year | 2004 | Publication | Proc. 15th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 15th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 164 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract |
A number of on-going astronomical and atmospheric research programs are aimed to the Terahertz (THz) spectral region. At frequencies above about 1.4 THz heterodyne receivers planned for these missions will use superconducting hot-electron bolometers as a mixers. We present current results on the development of superconducting NbN hot- electron bolometer mixer and quasioptical radiation coupling scheme for GREAT (German Receiver for Astronomy at Terahertz Frequencies, to be used aboard of SOFIA) and TELIS (Terahertz Limb Sounder). The mixer is incorporated into hybrid antenna consisting of a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and hyperhemispherical silicon lens. For the log-spiral feed antenna, the double side-band receiver noise temperature of 5500 K was achieved at 4.3 THz. The noise temperature shows less than 3 dB increase in the intermediate frequency band from 4 GHz to 7 GHz. The hybrid antenna had almost frequency independent and symmetric radiation pattern with the beam-width slightly broader than expected for a diffraction limited pattern. Results of FTS measurements in the direct detection regime agreed with the spectral dependence of the noise temperature for spiral antennas with different spacing of inner terminals. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1492 | |||
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| Author | Semenov, Alexei D.; Hiibers, Heinz-Wilhelm; Richter, Heiko; Smirnov, Konstantin; Gol'tsman, Gregory N.; Kaurova, Natalia; Voronov, Boris M. | ||||
| Title | Superconducting hot-electron bolometer mixer for terahertz heterodyne receivers | Type | Conference Article | ||
| Year | 2003 | Publication | Proc. 14th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 14th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 33-40 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract |
A number of on-going astronomical and atmospheric research programs are aimed to the Terahertz (THz) spectral region. At frequencies above about 1.4 THz heterodyne receivers planned for these missions will use superconducting hot-electron bolometers as a mixers. We present recent results of the terahertz antenna development of superconducting NbN hot-electron bolometer mixer for GREAT (German Receiver for Astronomy at Terahertz Frequencies, to be used aboard of SOFIA) and TELIS (Terahertz Limb Sounder). The mixer is incorporated into hybrid antenna consisting of a planar feed antenna, which has either logarithmic spiral or double-slot configuration, and hyper hemispherical silicon lens. The hybrid antenna showed almost frequency independent and symmetric radiation pattern with the beam-width slightly broader than expected for diffraction limited antenna. The noise temperature as well as its spectral dependence changes with the bolometer sizes that provides additional tool for mixer optimization. FTS spectra measured in the direct detection regime agreed with the noise temperature spectra. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1498 | |||
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| Author | Tong, C.-Y. Edward; Kawamura, Jonathan; Todd, R. Hunter; Papa, D. Cosmo; Blundell, Raymond.; Smith, Michael; Patt, Ferdinand; Gol'tsman, Gregory; Gershenzon, Eugene | ||||
| Title | Successful operation of a 1 THz NbN hot-electron bolometer receiver | Type | Conference Article | ||
| Year | 2000 | Publication | Proc. 11th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 11th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 49-59 | ||
| Keywords | NbN HEB mixers, applications | ||||
| Abstract |
A phonon-cooled NbN superconductive hot-electron bolometer receiver covering the frequency range 0.8-1.04 THz has successfully been used for astronomical observation at the Sub-Millimeter Telescope Observatory on Mount Graham, Arizona. This waveguide heterodyne receiver is a modified version of our fixed-tuned 800 GHz HEB receiver to allow for operation beyond 1 THz. The measured noise temperature of this receiver is about 1250 K at 0.81 THz, 560 K at 0.84 THz, and 1600 K at 1.035 THz. It has a 1 GHz wide IF bandwidth, centered at 1.8 GHz. This receiver has recently been used to detect the CO (9-8) molecular line emission at 1.037 THz in the Orion nebula. This is the first time a ground-based heterodyne receiver has been used to detect a celestial source above 1 THz. | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 303 | |||
| Permanent link to this record | |||||
| Author | Dauler, Eric; Kerman, Andrew; Robinson, Bryan; Yang, Joel; Voronov, Boris; Goltsman, Gregory; Hamilton, Scott; Berggren, Karl | ||||
| Title | Photon-number-resolution with sub-30-ps timing using multi-element superconducting nanowire single photon detectors | Type | Journal Article | ||
| Year | 2009 | Publication | J. Modern Opt. | Abbreviated Journal | J. Modern Opt. |
| Volume | 56 | Issue | 2 | Pages | 364-373 |
| Keywords | PNR SSPD; SNSPD; photon-number-resolution; superconducting nanowire single photon detector; timing jitter; system detection efficiency | ||||
| Abstract |
A photon-number-resolving detector based on a four-element superconducting nanowire single photon detector is demonstrated to have sub-30-ps resolution in measuring the arrival time of individual photons. This detector can be used to characterize the photon statistics of non-pulsed light sources and to mitigate dead-time effects in high-speed photon counting applications. Furthermore, a 25% system detection efficiency at 1550 nm was demonstrated, making the detector useful for both low-flux source characterization and high-speed photon-counting and quantum communication applications. The design, fabrication and testing of this detector are described, and a comparison between the measured and theoretical performance is presented. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 700 | ||
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| Author | Семенов, А. В.; Девятов, И. А.; Рябчун, С. А.; Масленников, С. Н.; Масленникова, А. С.; Ларионов, П. А.; Воронов, Б. М.; Чулкова, Г. М. | ||||
| Title | Поглощение терагерцового электромагнитного излучения в “грязной” сверхпроводниковой пленке при произвольном виде спектральных функций | Type | Journal Article | ||
| Year | 2011 | Publication | Ж. Радиоэлектрон. | Abbreviated Journal | |
| Volume | 10 | Issue | Pages | 7 | |
| Keywords | terahertz electromagnetic radiation; superconductors; detectors of terahertz range | ||||
| Abstract |
A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. В технике Келдыша рассмотрена задача о поглощении мощности высокочастотного электромагнитного поля в сверхпроводнике, удовлетворяющем условию грязного предела. Получено выражение для члена источника в кинетическом уравнении для функции распределения квазичастиц, справедливое при произвольном виде спектральных функций. Этот результат имеет значение для развития последовательной микроскопической теории сверхпроводниковых детекторов излучения терагерцового диапазона, в частности, перспективных детекторов на кинетической индуктивности смещённой током сверхпроводниковой полоски и джозефсоновской индуктивности туннельного контакта. |
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| Notes | Duplicated as 1117 | Approved | no | ||
| Call Number | RPLAB @ gujma @ | Serial | 713 | ||
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| Author | Semenov, A. V.; Devyatov, I. A.; Ryabchun, S. A.; Maslennikov, S. N.; Maslennikova, A. S.; Larionov, P. A.; Voronov, B. M.; Chulkova, G. M. | ||||
| Title | Absorption of terahertz electromagnetic radiation in dirty superconducting film at arbitrary type of the spectral functions | Type | Journal Article | ||
| Year | 2011 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 10 | Pages | ||
| Keywords | terahertz electromagnetic radiation; superconductors; detectors of terahertz range | ||||
| Abstract |
A problem of absorption of high-frequency electromagnetic field in dirty superconductor is treated within Keldysh technic. Expression for the source term in the kinetic equation for quasiparticle distribution function is derived. The result is significant for deriving a consistent microscopic theory of superconducting detectors for terahertz frequency range, perspective detectors on kinetic inductance of current-biased superconducting strip and on Josephson inductance of tunnel. | ||||
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| Notes | 7 pages | Approved | no | ||
| Call Number | Serial | 1117 | |||
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| Author | Zhang, Wen; Li, Ning; Jiang, Ling; Miao, Wei; Lin, Zhen-Hui; Yao, Qi-Jun; Shi, Sheng-Cai; Chen, Jian; Wu, Pei-Heng; Svechnikov, S. I.; Vachtomin, Y. B.; Antipov, S. V.; Voronov, B. M.; Gol'tsman, G. N. | ||||
| Title | Noise behaviour of a THz superconducting hot-electron bolometer mixer | Type | Journal Article | ||
| Year | 2007 | Publication | Chinese Phys. Lett. | Abbreviated Journal | Chinese Phys. Lett. |
| Volume | 24 | Issue | 6 | Pages | 1778-1781 |
| Keywords | NbN HEB mixers | ||||
| Abstract |
A quasi-optical superconducting NbN hot-electron bolometer (HEB) mixer is measured in the frequency range of 0.5–2.5 THz for understanding of the frequency dependence of noise temperature of THz coherent detectors. It has been found that noise temperature increasing with frequency is mainly due to the coupling loss between the quasi-optical planar antenna and the superconducting HEB bridge when taking account of non-uniform distribution of high-frequency current. With the coupling loss corrected, the superconducting HEB mixer demonstrates a noise temperature nearly independent of frequency. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0256-307X | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1430 | |||
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| Author | Chen, J.; Kang, L.; Jin, B. B.; Xu, W. W.; Wu, P. H.; Zhang, W.; Jiang, L.; Li, N.; Shi, S. C.; Gol'tsman, G. N. | ||||
| Title | Properties of terahertz superconducting hot electron bolometer mixers | Type | Journal Article | ||
| Year | 2008 | Publication | Int. J. Terahertz Sci. Technol. | Abbreviated Journal | Int. J. Terahertz Sci. Technol. |
| Volume | 1 | Issue | 1 | Pages | 37-41 |
| Keywords | NbN HEB mixers, noise temperature | ||||
| Abstract |
A quasi-optical superconducting niobium nitride (NbN) hot electron bolometer (HEB) mixer has been fabricated and measured in the terahertz (THz) frequency range of 0.5~2.52 THz. A receiver noise temperature of 2000 K at 2.52 THz has been obtained for the mixer without corrections. Also, the effect of a Parylene C anti-reflection (AR) coating on the silicon (Si) lens has been studied. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1417 | |||
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| Author | Korneeva, Yu. P.; Trifonov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
| Title | Design of resonator for superconducting single-photon detector | Type | Journal Article | ||
| Year | 2011 | Publication | Rus. J. Radio Electron. | Abbreviated Journal | Rus. J. Radio Electron. |
| Volume | Issue | 12 | Pages | ||
| Keywords | SSPD optical resonator, SNSPD | ||||
| Abstract |
A resonator for superconducting single-photon detector is designed. Near 60% coupling with a radiation propagating from a dielectric substrate of optical fiber is demonstrated to be achieved for typical values of the detector’s film sheet resistance. | ||||
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| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
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| Notes | 6 pages | Approved | no | ||
| Call Number | Serial | 1827 | |||
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| Author | Minaeva, O.; Divochiy, A.; Korneev, A.; Sergienko, A. V.; Goltsman, G. N. | ||||
| Title | High speed infrared photon counting with photon number resolving superconducting single-photon detectors (SSPDs) | Type | Conference Article | ||
| Year | 2009 | Publication | CLEO/Europe – EQEC | Abbreviated Journal | CLEO/Europe – EQEC |
| Volume | Issue | Pages | |||
| Keywords | SSPD, SNSPD | ||||
| Abstract |
A review of development and characterization of the nanostructures consisting of several meander sections, all connected in parallel was presented. Such geometry leads to a significant decrease of the kinetic inductance, without a decrease of the SSPD active area. A new type of SSPDs possess the QE of large-active- area devices, but, simultaneously, allows achieving short response times and the GHz-counting rate. This new generation of superconducting detectors has another significant advantage for quantum key distribution, they have a photon number resolving capability and can distinguish more photons. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1399 | |||
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| Author | Tretyakov, I.; Svyatodukh, S.; Chumakova, A.; Perepelitsa, A.; Kaurova, N.; Shurakov, A.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Room temperature silicon detector for IR range coated with Ag2S quantum dots | Type | Conference Article | ||
| Year | 2019 | Publication | IRMMW-THz | Abbreviated Journal | |
| Volume | Issue | Pages | |||
| Keywords | Ag2S quantum dots | ||||
| Abstract |
A silicon has been the chief technological semiconducting material of modern microelectronics and has had a strong influence on all aspects of society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared ranges. The expansion of the Si absorption to shorter wavelengths of the infrared range is of considerable interest to optoelectronic applications. By creating impurity states in Si it is possible to cause sub-band gap photon absorption. Here, we present an elegant and effective technology of extending the photoresponse of towards the IR range. Our approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si. The specific sensitivity of the Ag 2 S/Si heterostructure is 10 11 cm√HzW -1 at 1.55μm. Our findings open a path towards the future study and development of Si detectors for technological applications. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 2162-2035 | ISBN | 978-1-5386-8285-2 | Medium | |
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 8874267 | Serial | 1286 | ||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Semenov, A. D. | ||||
| Title | Submillimeter backward wave tube spectrometer for measuring superconducting film transmission | Type | Journal Article | ||
| Year | 1983 | Publication | Pribory i Tekhnika Eksperimenta | Abbreviated Journal | Pribory i Tekhnika Eksperimenta |
| Volume | 26 | Issue | 5 | Pages | 134-137 |
| Keywords | BWO spectroscopy, spectrometer, transmission | ||||
| Abstract |
A spectrometer employing six backward wave tubes is described. It is intended for investigation of superconductors in the 0.2-3 mm range of wave lengths. During the measurement of the transmission spectrum it is possible to determine the energy gap for superconduct1ng films 50 to 4000 A thick. The transmission factor can vary from 10-1 to 10-9. Spectrum of relation of film transmission factors in superconducting and normal states is measured for determining the energy gap 2 Δ. The transmission spectrum obtained by means of a computer for vanadium film 300 A thick is given as an example. The energy gap 2 Δ = 1.4 MeV | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0032-8162 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Субмиллиметровый спектрометр с лампами обратной волны для измерения пропускания сверхпроводниковых пленок | Approved | no | ||
| Call Number | Serial | 1713 | |||
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| Author | Schwaab, G. W.; Hübers, H.-W.; Schubert, J.; Erichsen, Patrik; Gol'tsman, G.; Semenov, A.; Verevkin, A.; Cherednichenko, S.; Gershenzon, E. | ||||
| Title | A high resolution spectrometer for the investigation of molecular structures in the THZ range | Type | Conference Article | ||
| Year | 1999 | Publication | Proc. 10th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 10th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 530-538 | ||
| Keywords | antireflection coatings, dielectric mirrors | ||||
| Abstract |
A status report on the design study of a novel tunable far-infrared (TuFTR) spectrometer for the investigation of the structure of weakly bound molecular complexes is given. The goal is a sensitive TuFIR spectrometer with full frequency coverage from 1-6 THz. To hit the goal, advanced sources (e.g. p-Ge lasers) and detectors (e.g. superconducting hot electron bolometric (HEB) mixers) shall be employed to extend the technique of cavity ringdown spectroscopy, that is currently used at optical and infrared frequencies to the FIR spectral range. Critical for such a system are high-Q resonators that still allow good optical coupling, and wideband antireflection coatings to increase detector sensitivity and decrease optical path losses. 2 nd order effective media theory and an iterative multilayer algorithm have been employed to design wideband antireflection coatings for dielectrics with large dielectric constants like Ge or Si. Taking into account 6 layers, for Si bandwidths of 100% of the center frequency could be obtained with power reflectivities below 1% for both polarizations simultaneously. Wideband dielectric mirrors including absorption losses were also studied yielding a bandwidth of about 50% with reflectivities larger than 99.5%. | ||||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1577 | |||
| Permanent link to this record | |||||
| Author | Karasik, B. S.; Zorin, M. A.; Milostnaya, I. I.; Elantev, A. I.; Gol’tsman, G. N.; Gershenzon, E. M. | ||||
| Title | Subnanosecond switching of YBaCuO films between superconducting and normal states induced by current pulse | Type | Journal Article | ||
| Year | 1995 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 77 | Issue | 8 | Pages | 4064-4070 |
| Keywords | YBCO HTS switches | ||||
| Abstract |
A study is reported of the current switching in high‐quality YBaCuO films deposited onto NdGaO3 and ZrO2 substrates between superconducting (S) and normal (N) states. The films 60–120 nm thick prepared by laser ablation were structured into single strips between gold contacts. The time dependence of the resistance after application of the voltage step to the film was monitored. Experiment performed within certain ranges of voltage amplitudes and temperatures has shown the occurrence of the fast stage (shorter than 400 ps) both in S‐N and N‐S transitions. A fraction of the film resistance changing within this stage in the S‐N transition increases with the current amplitude. A subnanosecond N‐S stage becomes more pronounced for shorter pulses. The fast switching is followed by the much slower change of resistance. The mechanism of switching is discussed in terms of the hot‐electron phenomena in YBaCuO. The contributions of other thermal processes (e.g., a phonon escape from the film, a heat diffusion in the film and substrate, a resistive domain formation) in the subsequent stage of the resistance dynamic have been also discussed. The basic limiting characteristics (average dissipated power, energy needed for switching, maximum repetition rate) of a picosecond switch which is proposed to be developed are estimated. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1623 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gershenzon, M. E.; Goltsman, G. N.; Lulkin, A.; Semenov, A. D.; Sergeev, A. V. | ||||
| Title | Electron-phonon interaction in ultrathin Nb films | Type | Journal Article | ||
| Year | 1990 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 70 | Issue | 3 | Pages | 505-511 |
| Keywords | Nb films | ||||
| Abstract |
A study was made of the heating of electrons in normal resistive states of superconducting thin Nb films. The directly determined relaxation time of the resistance of a sample and the rise of the electron temperature were used to find the electron-phonon interaction time rep,, The dependence of rep, on the mean free path of electrons re,, a 1-'demonstrated, in agreement with the theoretical predictions, that the contribution of the inelastic scattering of electrons by impurities to the energy relaxation process decreased at low temperatures and the observed temperature dependence rep, a T 2 was due to a modification of the phonon spectrum in thin fllms. 1. Much new information on the electron-phonon interaction time?;,, in thin films of normal metals and superconductors has been published recently. This information has been obtained mainly as a result of two types of measurement. One includes experiments on weak electron localization investigated by the method of quantum interference corrections to the conductivity of disordered conductors, which can be used to find the relaxation time T, of the phase of the electron wave function. In the absence of the scattering of electrons by paramagnetic impurities the relaxation time T, is associated with the most effective process of energy relaxation: T;= TL+ rep;, where T,, is the electronelectron relaxation time. At low temperatures, when the dependence T; a T is exhibited by thin disordered films, the dominant channel is that of the electron-electron relaxation and there is a lower limit to the temperature range in which rep, can be investigated. |
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 241 | |||
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| Author | Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gubkina, T. O.; Semash, V. D. | ||||
| Title | Superconductive properties of ultrathin NbN films on different substrates | Type | Journal Article | ||
| Year | 1994 | Publication | Sverkhprovodimost': Fizika, Khimiya, Tekhnika | Abbreviated Journal | Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume | 7 | Issue | 6 | Pages | 1097-1102 |
| Keywords | NbN films | ||||
| Abstract |
A study was made on dependence of surface resistance, critical temperature and width of superconducting transition on application temperature and thickness of NbN films, which varied within the range of 3-10 nm. Plates of sapphire, fused and monocrystalline quartz, MgO, as well as Si and silicon oxide were used as substrates. NbN films with 160 μθ·cm specific resistance and 16.5 K (Tc) critical temperature were obtained on sapphire substrates. Intensive growth of ΔTc was noted for films, applied on fused quartz, with increase of precipitation temperature. This is explained by occurrence of high tensile stresses in NbN films, caused by sufficient difference of thermal coefficients of expansion of NbN and quartz. | ||||
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| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0131-5366 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Сверхпроводниковые свойства ультратонких пленок NbN на различных подложках | Approved | no | ||
| Call Number | Serial | 1631 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Dzardanov, A. L.; Elant'ev, A. I.; Zorin, M. A.; Markin, A. G.; Semenov, A. D. | ||||
| Title | S-N switching of niobium and YBCO films: limit time and perspective of fast key element creation | Type | Journal Article | ||
| Year | 1992 | Publication | Sverkhprovodimost': Fizika, Khimiya, Tekhnika | Abbreviated Journal | Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume | 5 | Issue | 12 | Pages | 2386-2402 |
| Keywords | YBCO HTS switches | ||||
| Abstract |
A study was made on processes of switching of thin niobium film strips between superconducting and normal states under the effect of optical radiation pulse and voltage step. The results are described satisfactorily by the model of spatial homogeneous electron heating. It is shown that limiting switching times can be equal to several shares of nanosecond at 4.2 K. Preliminary results for YBa2Cu3O-7-x films are presented. Prospects and advantages of creation of ducting structures of narrow streps, are discussed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0131-5366 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1674 | |||
| Permanent link to this record | |||||
| Author | Tong, C. E.; Blundell, R.; Papa, D. C.; Smith, M.; Kawamura, J.; Gol'tsman, G.; Gershenzon, E.; Voronov, B. | ||||
| Title | An all solid-state superconducting heterodyne receiver at terahertz frequencies | Type | Journal Article | ||
| Year | 1999 | Publication | IEEE Microw. Guid. Wave Lett. | Abbreviated Journal | IEEE Microw. Guid. Wave Lett. |
| Volume | 9 | Issue | 9 | Pages | 366-368 |
| Keywords | waveguide NbN HEB mixers | ||||
| Abstract |
A superconducting hot-electron bolometer mixer-receiver operating from 1 to 1.26 THz has been developed. This heterodyne receiver employs two solid-state local oscillators each consisting of a Gunn oscillator followed by two stages of varactor frequency multiplication. The measured receiver noise temperature is 1350 K at 1.035 THz and 2700 K at 1.26 THz. This receiver demonstrates that tunable solid-state local oscillators, supplying only a few micro-watts of output power, can be used in terahertz receiver applications. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8207 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1565 | |||
| Permanent link to this record | |||||
| Author | Karasik, B. S.; Elantiev, A. I. | ||||
| Title | Analysis of the noise performance of a hot-electron superconducting bolometer mixer | Type | Conference Article | ||
| Year | 1995 | Publication | Proc. 6th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 6th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 229-246 | ||
| Keywords | HEB mixers | ||||
| Abstract |
A theoretical analysis for the noise temperature of hot–electron superconducting mixer has been presented. Thecontributions of both Johnson noise and electron temperature fluctuations have been evaluated. A set of criteriaensuring low noise performance of the mixer has been stated and a simple analytic expression for the noisetemperature of the mixer device has been suggested. It has been shown that an improvement of the mixer sensitivitydoes not necessarily follow by a decrease of the bandwidth. An SSB noise temperature limit due to the intrinsic noisemechanisms has been estimated to be as low as 40–90 K for a mixer device made from Nb or NbN thin film.Furthermore, the conversion gain bandwidth can be as wide as is allowed by the intrinsic electron temperaturerelaxation time if an appropriate choice of the mixer resistance has been made. The intrinsic mixer noise bandwidthis of 3 GHz for Nb device and of 5 GHz for NbN device. An additional improvement of the theory has been madewhen a distinction between the impedance measured at high intermediate frequency (larger than the mixerbandwidth) and the mixer ohmic resistance has been taken into account.Recently obtained experimental data on Nb and NbNbolometer mixer devices are viewed in connection with thetheoretical predictions.The noise temperature limit has also been specified for the mixer device where an outdiffusion coolingmechanism rather than the electron–phonon energy relaxation determines the mixer bandwidth. A consideration ofthe noise performance of a bolometer mixer made from YBaCuO film utilizing a hot–electron effect has been done. | ||||
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| Publisher | Place of Publication | Pasadena, Ca | Editor | ||
| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 258 | |||
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| Author | Gershenzon, E. M.; Gol’tsman, G. N.; Gousev, Y. P.; Elant’ev, A. I.; Semenov, A. D. | ||||
| Title | Electromagnetic radiation mixer based on electron heating in resistive state of superconductive Nb and YBaCuO films | Type | Journal Article | ||
| Year | 1991 | Publication | IEEE Trans. Magn. | Abbreviated Journal | IEEE Trans. Magn. |
| Volume | 27 | Issue | 2 | Pages | 1317-1320 |
| Keywords | YBCO, HTS, Nb HEB mixers | ||||
| Abstract |
A theory of an electron-heating mixer which makes it possible to calculate all the characteristics of the device is developed. It is shown that positive conversion gain is possible for such a mixer in the millimeter to near-infrared wavelength range. The dynamic range and the optimum heterodyne power can be selected from a very wide interval by varying the mixing element volume. Measurements made for Nb within the frequency range of 120-750 GHz confirm the theory. The conversion loss obtained at T=1.6 K and normalized to the element reaches 0.3 dB in the intermediate frequency band of 40 MHz; the possible noise temperature is 50 K. The estimation of noise temperature and output band for YBaCuO at T=77 yields 200 K and more than 10 GHz, respectively. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1941-0069 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1681 | |||
| Permanent link to this record | |||||
| Author | Lusche, R.; Semenov, A.; Ilin, K.; Siegel, M.; Korneeva, Y.; Trifonov, A.; Korneev, A.; Goltsman, G.; Vodolazov, D.; Hübers, H.-W. | ||||
| Title | Effect of the wire width on the intrinsic detection efficiency of superconducting-nanowire single-photon detectors | Type | Journal Article | ||
| Year | 2014 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 116 | Issue | 4 | Pages | 043906 (1 to 9) |
| Keywords | NbN SSPD, SNSPD, TaN | ||||
| Abstract |
A thorough spectral study of the intrinsic single-photon detection efficiency in superconducting TaN and NbN nanowires with different widths has been performed. The experiment shows that the cut-off of the intrinsic detection efficiency at near-infrared wavelengths is most likely controlled by the local suppression of the barrier for vortex nucleation around the absorption site. Beyond the cut-off quasi-particle diffusion in combination with spontaneous, thermally activated vortex crossing explains the detection process. For both materials, the reciprocal cut-off wavelength scales linearly with the wire width where the scaling factor agrees with the hot-spot detection model. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1357 | |||
| Permanent link to this record | |||||
| Author | Karasik, B.S.; Milostnaya, I.I.; Zorin, M.A.; Elantev, A.I.; Gol'tsman, G.N.; Gershenzon, E.M. | ||||
| Title | Subnanosecond S-N and N-S switching of YBCO film induced by current pulse | Type | Journal Article | ||
| Year | 1994 | Publication | Phys. C: Supercond. | Abbreviated Journal | Phys. C: Supercond. |
| Volume | 235-240 | Issue | Pages | 1981-1982 | |
| Keywords | YBCO HTS switches | ||||
| Abstract |
A transition of YBCO bridge 60 nm thick from superconducting to normal state induced by an abrupt current step has been studied. A subnanosecond stage has been observed during both S-N and N-S transition. The data obtained can be explained by hot-electron phenomena. On the basis of experimental results a prediction of picosecond switch performance has been made. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0921-4534 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1633 | |||
| Permanent link to this record | |||||
| Author | Tret’yakov, I. V.; Ryabchun, S. A.; Kaurova, N. S.; Larionov, P. A.; Lobastova, A. A.; Voronov, B. M.; Finkel, M. I.; Gol’tsman, G. N. | ||||
| Title | Optimum absorbed heterodyne power for superconducting NbN hot-electron bolometer mixer | Type | Journal Article | ||
| Year | 2010 | Publication | Tech. Phys. Lett. | Abbreviated Journal | Tech. Phys. Lett. |
| Volume | 36 | Issue | 12 | Pages | 1103-1105 |
| Keywords | NbN HEB mixer | ||||
| Abstract |
Absorbed heterodyne power has been measured in a low-noise broadband hot-electron bolometer (HEB) mixer for the terahertz range, operating on the effect of electron heating in the resistive state of an ultrathin superconducting NbN film. It is established that the optimum absorbed heterodyne power for the HEB mixer operating at 2.5 THz is about 100 nW. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7850 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1389 | |||
| Permanent link to this record | |||||
| Author | Chuprina, I. N.; An, P. P.; Zubkova, E. G.; Kovalyuk, V. V.; Kalachev, A. A.; Gol'tsman, G. N. | ||||
| Title | Optimisation of spontaneous four-wave mixing in a ring microcavity | Type | Conference Article | ||
| Year | 2017 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 47 | Issue | 10 | Pages | 887-891 |
| Keywords | ring microcavity | ||||
| Abstract |
Abstract. A theory of spontaneous four-wave mixing in a ring microcavity is developed. The rate of emission of biphotons for pulsed and monochromatic pumping with allowance for the disper- sion of group velocities is analytically calculated. In the first case, pulses in the form of an increasing exponential are considered, which are optimal for excitation of an individual resonator mode. The behaviour of the group velocity dispersion as a function of the width and height of the waveguide is studied for a specific case of a ring microcavity made of silicon nitride. The results of the numeri- cal calculation are in good agreement with the experimental data. The ring microcavity is made of two types of waveguides: com- pletely etched and half etched. It is found that the latter allow for better control over the parameters in the manufacturing process, making them more predictable. | ||||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1142 | ||
| Permanent link to this record | |||||
| Author | Shcherbatenko, M.; Lobanov, Y.; Semenov, A.; Kovalyuk, V.; Korneev, A.; Ozhegov, R.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
| Title | Coherent detection of weak signals with superconducting nanowire single photon detector at the telecommunication wavelength | Type | Conference Article | ||
| Year | 2017 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 10229 | Issue | Pages | 0G (1 to 12) | |
| Keywords | SSPD mixer, SNSPD, coherent detection, weak signal detection, superconducting nanostructures | ||||
| Abstract |
Achievement of the ultimate sensitivity along with a high spectral resolution is one of the frequently addressed problems, as the complication of the applied and fundamental scientific tasks being explored is growing up gradually. In our work, we have investigated performance of a superconducting nanowire photon-counting detector operating in the coherent mode for detection of weak signals at the telecommunication wavelength. Quantum-noise limited sensitivity of the detector was ensured by the nature of the photon-counting detection and restricted by the quantum efficiency of the detector only. Spectral resolution given by the heterodyne technique and was defined by the linewidth and stability of the Local Oscillator (LO). Response bandwidth was found to coincide with the detector’s pulse width, which, in turn, could be controlled by the nanowire length. In addition, the system noise bandwidth was shown to be governed by the electronics/lab equipment, and the detector noise bandwidth is predicted to depend on its jitter. As have been demonstrated, a very small amount of the LO power (of the order of a few picowatts down to hundreds of femtowatts) was required for sufficient detection of the test signal, and eventual optimization could lead to further reduction of the LO power required, which would perfectly suit for the foreseen development of receiver matrices and the need for detection of ultra-low signals at a level of less-than-one-photon per second. | ||||
| Address | |||||
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| Publisher | Spie | Place of Publication | Editor | Prochazka, I.; Sobolewski, R.; James, R.B. | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Photon counting applications | ||
| Notes | Approved | no | |||
| Call Number | 10.1117/12.2267724 | Serial | 1201 | ||
| Permanent link to this record | |||||
| Author | Iomdina, E. N.; Goltsman, G. N.; Seliverstov, S. V.; Sianosyan, A. A.; Teplyakova, K. O.; Rusova, A. A. | ||||
| Title | Study of transmittance and reflectance spectra of the cornea and the sclera in the THz frequency range | Type | Journal Article | ||
| Year | 2016 | Publication | J. Biomed. Opt. | Abbreviated Journal | J. Biomed. Opt. |
| Volume | 21 | Issue | 9 | Pages | 97002 (1 to 5) |
| Keywords | BWO, IMPATT diode, Schottky diode, medicine, animals, cornea, physiology, humans, rabbits, sclera diagnostic imaging, physiology | ||||
| Abstract |
An adequate water balance (hydration extent) is one of the basic factors of normal eye function, including its external shells: the cornea and the sclera. Adequate control of corneal and scleral hydration is very important for early diagnosis of a variety of eye diseases, stating indications for and contraindications against keratorefractive surgeries and the choice of contact lens correction solutions. THz systems of creating images in reflected beams are likely to become ideal instruments of noninvasive control of corneal and scleral hydration degrees. This paper reports on the results of a study involving transmittance and reflectance spectra for the cornea and the sclera of rabbit and human eyes, as well as those of the rabbit eye, in the frequency range of 0.13 to 0.32 THz. The dependence of the reflectance coefficient of these tissues on water mass percentage content was determined. The experiments were performed on three corneas, three rabbit scleras, two rabbit eyes, and three human scleras. The preliminary results demonstrate that the proposed technique, based on the use of a continuous THz radiation, may be utilized to create a device for noninvasive control of corneal and scleral hydration, which has clear potential of broad practical application. | ||||
| Address | Moscow State Pedagogical University, Department of Physics, 29 Malaya Pirogovskaya Street, Moscow 119435, Russia | ||||
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| Language | English | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1083-3668 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:27626901 | Approved | no | ||
| Call Number | Serial | 1335 | |||
| Permanent link to this record | |||||
| Author | Glejm, A. V.; Anisimov, A. A.; Asnis, L. N.; Vakhtomin, Yu. B.; Divochiy, A. V.; Egorov, V. I.; Kovalyuk, V. V.; Korneev, A. A.; Kynev, S. M.; Nazarov, Yu. V.; Ozhegov, R. V.; Rupasov, A. V.; Smirnov, K. V.; Smirnov, M. A.; Goltsman, G. N.; Kozlov, S. A. | ||||
| Title | Quantum key distribution in an optical fiber at distances of up to 200 km and a bit rate of 180 bit/s | Type | Journal Article | ||
| Year | 2014 | Publication | Bulletin of the Russian Academy of Sciences. Physics | Abbreviated Journal | |
| Volume | 78 | Issue | 3 | Pages | 171-175 |
| Keywords | SSPD, SNSPD, applications | ||||
| Abstract |
An experimental demonstration of a subcarrier-wave quantum cryptography system with superconducting single-photon detectors (SSPDs) that distributes a secure key in a single-mode fiber at distance of 25 km with a bit rate of 800 kbit/s, a distance of 100 km with a bit rate of 19 kbit/s, and a distance of 200 km with a bit rate of 0.18 kbit/s is described. | ||||
| Address | |||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1062-8738 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ kovalyuk @ | Serial | 940 | ||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Elant'ev, A. I.; Karasik, B. S.; Potoskuev, S. E. | ||||
| Title | Intense electromagnetic radiation heating of superconductor electrons in resistive state | Type | Journal Article | ||
| Year | 1988 | Publication | Fizika Nizkikh Temperatur | Abbreviated Journal | Fizika Nizkikh Temperatur |
| Volume | 14 | Issue | 7 | Pages | 753-763 |
| Keywords | Nb HEB | ||||
| Abstract |
An experimental study is made of the effect of intense radiation in the millimeter and submillimeter ranges on thin and narrow Nb films in the resistive state. It is found that the excess resistance resulting from radiation and the dependence of its relaxation time on radiation intensity and transport current can be explained in terms of the effect of electron heating. Quantitative agreement is obtained between the experimental data and a homogeneous electron heating model. | ||||
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| Language | Summary Language | Original Title | |||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1697 | |||
| Permanent link to this record | |||||
| Author | Cherednichenko, S.; Kroug, M.; Yagoubov, P.; Merkel, H.; Kollberg, E.; Yngvesson, K. S.; Voronov, B.; Gol’tsman, G. | ||||
| Title | IF bandwidth of phonon cooled HEB mixers made from NbN films on MgO substrates | Type | Conference Article | ||
| Year | 2000 | Publication | Proc. 11th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 11th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 219-227 | ||
| Keywords | NbN HEB mixers, cinversion gain bandwidth, IF bandwidth | ||||
| Abstract |
An investigation of gain and noise bandwidth of phonon-cooled hot-electron bolometric (HEB) mixers is presented. The radiation coupling to the mixers is quasioptical through either a spiral or twin-slot antenna. A maximum gain bandwidth of 4.8 GHz is obtained for mixers based on a 3.5 nm thin NbN film with Tc= 10 K. The noise bandwidth is 5.6 GHz, at the moment limited by parasitic elements in the, device mount fixture. At 0.65 THz the DSB receiver noise temperature is 700-800 К in the IF band 1-2 GHz, and 1150-2700 К in the band 3.5-7 GHz. | ||||
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| Series Editor | Series Title | Abbreviated Series Title | |||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1557 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G. | ||||
| Title | Population and lifetime of excited states of shallow impurities in Ge | Type | Journal Article | ||
| Year | 1979 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 49 | Issue | 2 | Pages | 355-362 |
| Keywords | Ge, photothermal ionization, shallow impurities | ||||
| Abstract |
An investigation was made of the dependences of the intensities of photothermal ionization lines of excited states of shallow impurities in Ge on the intensity of impurity-absorbed background radiation and on temperature. The results obtained were used to find the density and lifetime of carriers of lower excited states of the impurity centers. The lifetimes of the excited states of donors in Ge were 10-~-10-" sec and the lifetime of the lower excited state of acceptors was -lo-' sec. In the presence of background radiation the population of the excited states was very different from the equilibrium value and, in particular, a population inversion of the 2pk, state relative to the 3p0 and 3s states was observed. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1719 | |||
| Permanent link to this record | |||||
| Author | Gousev, Yu. P.; Gol'tsman, G. N.; Semenov, A. D.; Gershenzon, E. M.; Nebosis, R. S.; Heusinger, M. A.; Renk, K. F. | ||||
| Title | Broadband ultrafast superconducting NbN detector for electromagnetic radiation | Type | Journal Article | ||
| Year | 1994 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 75 | Issue | 7 | Pages | 3695-3697 |
| Keywords | NbN HEB | ||||
| Abstract |
An ultrafast detector that is sensitive to radiation in a broad spectral range from submillimeter waves to visible light is reported. It consists of a structured NbN thin film cooled to a temperature below Tc (∼11 K). Using 20 ps pulses of a GaAs laser, we observed signal pulses with both rise and decay time of about 50 ps. From the analysis of a mixing experiment with submillimeter radiation we estimate an intrinsic response time of the detector of ∼12 ps. The sensitivity was found to be similar for the near‐infrared and submillimeter radiation. Broadband sensitivity and short response time are attributed to a quasiparticle heating effect. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 252 | |||
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| Author | Smirnov, K. V.; Vachtomin, Y. B.; Ozhegov, R. V.; Pentin, I. V.; Slivinskaya, E. V.; Korneev, A. A.; Goltsman, G. N. | ||||
| Title | Fiber coupled single photon receivers based on superconducting detectors for quantum communications and quantum cryptography | Type | Conference Article | ||
| Year | 2008 | Publication | Proc. SPIE | Abbreviated Journal | Proc. SPIE |
| Volume | 7138 | Issue | Pages | 713827 (1 to 6) | |
| Keywords | SSPD, SNSPD, superconducting single photon detector, ultra-thin superconducting films, optical fiber coupling, ready to use receiver | ||||
| Abstract |
At present superconducting detectors become increasingly attractive for various practical applications. In this paper we present results on the depelopment of fiber coupled receiver systems for the registration of IR single photons, optimized for telecommunication and quantum-cryptography. These receiver systems were developed on the basis of superconducting single photon detectors (SSPD) of VIS and IR wavelength ranges. The core of the SSPD is a narrow ( 100 nm) and long ( 0,5 mm) strip in the form of a meander which is patterned from a 4-nm-thick NbN film (TC=10-11 K, jC= 5-7•106 A/cm2); the sensitive area dimensions are 10×10 μm2. The main problem to be solved while the receiver system development was optical coupling of a single-mode fiber (9 microns in diameter) with the SSPD sensitive area. Characteristics of the developed system at the optical input are as follows: quantum efficiency >10 % (at 1.3 μm), >4 % (at 1.55 μm); dark counts rate ≤1 s-1; duration of voltage pulse ≤5 ns; jitter ≤40 ps. The receiver systems have either one or two identical channels (for the case of carrying out correlation measurements) and are made as an insert in a helium storage Dewar. | ||||
| Address | |||||
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| Publisher | Spie | Place of Publication | Editor | Tománek, P.; Senderáková, D.; Hrabovský, M. | |
| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1405 | |||
| Permanent link to this record | |||||
| Author | Shcherbatenko, M.; Lobanov, Y.; Kovalyuk, V.; Korneev, A.; Gol'tsman, G. N. | ||||
| Title | Photon counting detector as a mixer with picowatt local oscillator power requirement | Type | Conference Article | ||
| Year | 2016 | Publication | Proc. 27th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 27th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 110 | ||
| Keywords | SSPD mixer, SNSPD | ||||
| Abstract |
At the current stage of the heterodyne receiver technology, great attention is paid to the development of detector arrays and matrices comprising many detectors on a single wafer. However, any traditional THz detector (such as SIS, HEB, or Schottky diode) requires quite a noticeable amount of Local Oscillator (LO) power which scales with the matrix size, and the total amount of the LO power needed is much greater than that available from compact and handy solid state sources. Substantial reduction of the LO power requirement may be obtained with a photon-counting detector used as a mixer. This approach, mentioned earlier in [1,2] provides a number of advantages. Thus, sensitivity of such a detector would be at the quantum limit (because of the photon-counting nature of the detector) and just a few LO photons for the mixing would be required leading to a possible breakthrough in the matrix receiver development. In addition, the receiver could be easily tuned from the heterodyne to the direct detection mode without any loss in its sensitivity with the latter limited only by the quantum efficiency of the detector used. We demonstrate such a technique with the use of the Superconducting Nanowire Single Photon Detector(SNSPD)[3] irradiated by both 1.5 μm LO with a tiny amount of power (from a few picowatts down to femtowatts) facing the detector, and the test signal with a power significantly less than that of the LO. The SNSPD was operated in the current mode and the bias current was slightly below its critical value. Irradiating the detector with either the LO or the signal source produced voltage pulses which are statistically evenly distributed and could be easily counted by a lab counter or oscilloscope. Irradiating the detector by the both lasers simultaneously produced pulses at the frequency f m which is the exact difference between the frequencies at which the two lasers operate. f m could be deduced form either counts statistics integrated over a sufficient time interval or with the help of an RF spectrum analyzer. In addition to the chip SNSPD with normal incidence coupling, we use the detectors with a travelling wave geometry design [4]. In this case a niobium nitride nanowire is placed on the top of a nanophotonic waveguide, thus increasing the efficient interaction length. Integrated device scheme allows us to measure the optical losses with high accuracy. Our approach is fully scalable and, along with a large number of devices integrated on a single chip can be adapted to the mid and far IR ranges. This work was supported in part by the Ministry of Education and Science of the Russian Federation, contract no. 14.B25.31.0007 and by RFBR grant # 16-32-00465. 1. Leaf A. Jiang and Jane X. Luu, ―Heterodyne detection with a weak local oscillator, Applied Optics Vol. 47, Issue 10, pp. 1486-1503 (2008) 2. Matsuo H. ―Requirements on Photon Counting Detectors for Terahertz Interferometry J Low Temp Phys (2012) 167:840–845 3. A. Semenov, G. Gol'tsman, A. Korneev, “Quantum detection by current carrying superconducting film”, Physica C, 352, pp. 349-356 (2001) 4. O. Kahl, S. Ferrari, V. Kovalyuk, G. N. Goltsman, A. Korneev, and W. H. P. Pernice, ―Waveguide integrated superconducting single-photon detectors with high internal quantum efficiency at telecom wavelengths., Sci. Rep., vol. 5, p. 10941, (2015). | ||||
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| Notes | Approved | no | |||
| Call Number | Serial | 1203 | |||
| Permanent link to this record | |||||
| Author | Zolotov, P.; Semenov, A.; Divochiy, A.; Goltsman, G. | ||||
| Title | A comparison of VN and NbN thin films towards optimal SNSPD efficiency | Type | Journal Article | ||
| Year | 2021 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 31 | Issue | 5 | Pages | 1-4 |
| Keywords | NbN SSPD, SNSPD, WSi | ||||
| Abstract |
Based on early phenomenological ideas about the operation of superconducting single-photon detectors (SSPD or SNSPD), it was expected that materials with a lower superconducting gap should perform better in the IR range. The plausibility of this concept could be checked using two popular SSPD materials – NbN and WSi films. However, these materials differ strongly in crystallographic structure (polycrystalline B1 versus amorphous), which makes their dependence on disorder different. In our work we present a study of the single-photon response of SSPDs made from two disordered B1 structure superconductors – vanadium nitride and niobium nitride thin films. We compare the intrinsic efficiency of devices made from films with different sheet resistance values. While both materials have a polycrystalline structure and comparable diffusion coefficient values, VN films show metallic behavior over a wide range of sheet resistance, in contrast to NbN films with an insulator-like temperature dependence of resistivity, which may be partially due to enhanced Coulomb interaction, leading to different starting points for the normal electron density of states. The results show that even though VN devices are more promising in terms of theoretical predictions, their optimal performance was not reached due to lower values of sheet resistance. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1223 | |||
| Permanent link to this record | |||||
| Author | Dzardanov, A.; Ekstrom, H.; Gershenzon, E.; Gol'tsman, G.; Jacobsson, S.; Karasik, B.; Kollberg, E.; Okunev, O.; Voronov, B.; Yngvesson, S. | ||||
| Title | Hot-electron superconducting mixers for 20-500 GHz operation | Type | Conference Article | ||
| Year | 1994 | Publication | Proc. Int. Conf. on Millimeter and Submillimeter Waves and Appl. | Abbreviated Journal | |
| Volume | 2250 | Issue | 4D | Pages | 276-278 |
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| Abstract |
Bolometdcmucers based on Nb and NbN superconducting thin films in the resistive state have been prepared for 20, 100 GHz and 350-500 GHz operation. The mixing mechanism is presumably of electron heating origin. Our measurements indicate that a conversion loss of about 6-8 dB can rather easily be achieved, and that the noise is reasonably low. The requirements on the operation mode and on the film parameters in order to obtain small conversion losses or even gain are discussed. For NbN films the availability of nearly 1 GHz IF bandwidth is experimentally demonstrated. NbN hot-electron mucers combined with slot-line tapered antenna on Si membrane or with double-dipole antenna on SiO^ substrate have been fabricated. The devices we study are considered to be very promising for use in heterodyne receivers from microwaves to terahertz frequencies. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ phisix @ | Serial | 981 | ||
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| Author | Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Yu; Shcherbatenko, M.; Korneev, A; Pernice, W.; Goltsman, G. | ||||
| Title | Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application | Type | Conference Volume | ||
| Year | 2017 | Publication | Proc. SPBOPEN | Abbreviated Journal | Proc. SPBOPEN |
| Volume | Issue | Pages | 421-422 | ||
| Keywords | waveguide, SSPD, SNSPD | ||||
| Abstract |
By adopting a travelling-wave geometry approach, integrated superconductor- nanophotonic devices were fabricated. The architecture consists of a superconducting NbN- nanowire atop of a silicon nitride (Si 3 N 4 ) nanophotonic waveguide. NbN-nanowire was operated as a single-photon counting detector, with up to 92% on-chip detection efficiency (OCDE), in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 10^6 in C-band at 1550 nm wavelength. | ||||
| Address | St. Petersburg, Russia | ||||
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| Notes | Duplicated as 1140 | Approved | no | ||
| Call Number | Serial | 1256 | |||
| Permanent link to this record | |||||
| Author | Korneev, Alexander; Golt'sman, Gregory; Pernice, Wolfram | ||||
| Title | Photonic integration meets single-photon detection | Type | Miscellaneous | ||
| Year | 2015 | Publication | Laser Focus World | Abbreviated Journal | Laser Focus World |
| Volume | 51 | Issue | 5 | Pages | 47-50 |
| Keywords | optical waveguide SSPD, SNSPD | ||||
| Abstract |
By embedding superconducting nanowire single-photon detectors (SNSPDs) in nanophotonic circuits, these waveguide-integrated detectors are a key building block for future on-chip quantum computing applications. | ||||
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| Notes | Approved | no | |||
| Call Number | RPLAB @ akorneev @ | Serial | 1126 | ||
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| Author | Elvira, D.; Michon, A.; Fain, B.; Patriarche, G.; Beaudoin, G.; Robert-Philip, I.; Vachtomin, Y.; Divochiy, A. V.; Smirnov, K. V.; Gol’tsman, G. N.; Sagnes, I.; Beveratos, A. | ||||
| Title | Time-resolved spectroscopy of InAsP/InP(001) quantum dots emitting near 2 μm | Type | Journal Article | ||
| Year | 2010 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 97 | Issue | 13 | Pages | 131907 (1 to 3) |
| Keywords | SSPD, SNSPD, InAsP/InP quantum dots | ||||
| Abstract |
By using superconducting single photon detectors, we perform time-resolved characterization of a small ensemble of InAsP/InP quantum dots grown by metal organic vapor phase epitaxy, emitting at wavelengths between 1.6 and 2.2 μm. We demonstrate that alloying phosphorus with InAs allows to shift the emission wavelength toward higher wavelengths, while keeping the high optical quality of these quantum dots at room temperature, with no decrease in their radiative lifetime. This work was partially supported by Russian Ministry of Science and Education: Federal State Program “Scientific and Educational Cadres of Innovative” state Contract Nos. 02.740.0228, 14.740.11.0343, 14.740.11.0269, and P931, and RFBR Project No. 09-02-12364. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1238 | |||
| Permanent link to this record | |||||
| Author | Pyatkov, Felix; Khasminskaya, Svetlana; Fütterling, Valentin; Fechner, Randy; Słowik, Karolina; Ferrari, Simone; Kahl1, Oliver; Kovalyuk, Vadim; Rath, Patrik; Vetter, Andreas; Flavel, Benjamin S.; Hennrich, Frank; Kappes, Manfred M.; Gol’tsman, Gregory N.; Korneev, Alexander; Rockstuhl, Carsten; Krupke, Ralph; Pernice, Wolfram H. P. | ||||
| Title | Carbon nanotubes as exceptional electrically driven on-chip light sources | Type | Miscellaneous | ||
| Year | 2016 | Publication | 2Physics | Abbreviated Journal | 2Physics |
| Volume | Issue | Pages | |||
| Keywords | carbon nanotubes, CNT | ||||
| Abstract |
Carbon nanotubes (CNTs) belong to the most exciting objects of the nanoworld. Typically, around 1 nm in diameter and several microns long, these cylindrically shaped carbon-based structures exhibit a number of exceptional mechanical, electrical and optical characteristics [1]. In particular, they are promising ultra-small light sources for the next generation of optoelectronic devices, where electrical components are interconnected with photonic circuits. Few years ago, we demonstrated that electically driven CNTs can serve as waveguide-integrated light sources [2]. Progress in the field of nanotube sorting, dielectrophoretical site-selective deposition and efficient light coupling into underlying substrate has made CNTs suitable for wafer-scale fabrication of active hybrid nanophotonic devices [2,3]. Recently we presented a nanotube-based waveguide integrated light emitters with tailored, exceptionally narrow emission-linewidths and short response times [4]. This allows conversion of electrical signals into well-defined optical signals directly within an optical waveguide, as required for future on-chip optical communication. Schematics and realization of this device is shown in Figure 1. The devices were manufactured by etching a photonic crystal waveguide into a dielectric layer following electron beam lithography. Photonic crystals are nanostructures that are also used by butterflies to give the impression of color on their wings. The same principle has been used in this study to select the color of light emitted by the CNT. The precise dimensions of the structure were numerically simulated to tailor the properties of the final device. Metallic contacts in the vicinity to the waveguide were fabricated to provide electrical access to CNT emitters. Finally, CNTs, sorted by structural and electronic properties, were deposited from a solution across the waveguide using dielectrophoresis, which is an electric-field-assisted deposition technique. |
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2372-1782 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1219 | |||
| Permanent link to this record | |||||
| Author | Pyatkov, F.; Khasminskaya, S.; Kovalyuk, V.; Hennrich, F.; Kappes, M. M.; Goltsman, G. N.; Pernice, W. H. P.; Krupke, R. | ||||
| Title | Sub-nanosecond light-pulse generation with waveguide-coupled carbon nanotube transducers | Type | Journal Article | ||
| Year | 2017 | Publication | Beilstein J. Nanotechnol. | Abbreviated Journal | Beilstein J. Nanotechnol. |
| Volume | 8 | Issue | Pages | 38-44 | |
| Keywords | carbon nanotubes; CNT; infrared; integrated optics devices; nanomaterials | ||||
| Abstract |
Carbon nanotubes (CNTs) have recently been integrated into optical waveguides and operated as electrically-driven light emitters under constant electrical bias. Such devices are of interest for the conversion of fast electrical signals into optical ones within a nanophotonic circuit. Here, we demonstrate that waveguide-integrated single-walled CNTs are promising high-speed transducers for light-pulse generation in the gigahertz range. Using a scalable fabrication approach we realize hybrid CNT-based nanophotonic devices, which generate optical pulse trains in the range from 200 kHz to 2 GHz with decay times below 80 ps. Our results illustrate the potential of CNTs for hybrid optoelectronic systems and nanoscale on-chip light sources. | ||||
| Address | Department of Materials and Earth Sciences, Technische Universitat Darmstadt, Darmstadt 64287, Germany | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 2190-4286 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | PMID:28144563; PMCID:PMC5238692 | Approved | no | ||
| Call Number | RPLAB @ kovalyuk @ | Serial | 1109 | ||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Ptitsina, N. G.; Riger, E. R. | ||||
| Title | Effect of electron-electron collisions on the trapping of free carriers by shallow impurity centers in germanium | Type | Journal Article | ||
| Year | 1986 | Publication | Sov. Phys. JETP | Abbreviated Journal | Sov. Phys. JETP |
| Volume | 64 | Issue | 4 | Pages | 889-897 |
| Keywords | Ge, trapping of free carriers | ||||
| Abstract |
Cascade Auger recombination of free carriers on shallow impurities in Ge is investigated under quasi-equilibrium conditions (T= 2-12 K) and in impurity breakdown. The Auger capture cross sections are found to be a,= 5. 10-l9 T-'n cm2 for donors and uip= 7- T-5p cm2 for acceptors. It is shown that in an isotropic semiconductor (p-Ge) ui is well described by the cascade-capture theory that takes into account only electron-electron collisions. In an anisotropic semiconductor ui is considerably larger (n-Ge, strongly uniaxially compressedp-Ge). Under impurity breakdown conditions the electron-electron collisions determine the lifetimes of the free carriers only in samples with appreciable density of the compensating impurity (Nk loi3 cmP3). | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1707 | |||
| Permanent link to this record | |||||
| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Lugovaya, G. Ya.; Serebryakova, N. A.; Chinkova, E. V. | ||||
| Title | Infrared radiation detectors on the base of electron heating in resistive state films from traditional superconducing materials | Type | Journal Article | ||
| Year | 1992 | Publication | Sverkhprovodimost': Fizika, Khimiya, Tekhnika | Abbreviated Journal | Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume | 5 | Issue | 6 | Pages | 1129-1140 |
| Keywords | IR HEB detectors | ||||
| Abstract |
Characteristics of infrared radiation detectors based on electron heating in thin superconducting films transformed at T ≤ Tc to a resistive state by transport current and, if necessary, by magnetic field are investigated. A comparison is made of the characteristics of the detectors fabricated of different materials: aluminium, niobium, Mo0.5Re0.5. Some devices with different topology of the reception area are considered. Electron heating detectors are comparable by their sensitivity with superconducting bolometers, but differ in a high fast-response. | ||||
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| Publisher | Place of Publication | Editor | |||
| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0131-5366 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1673 | |||
| Permanent link to this record | |||||
| Author | Matyushkin, Yakov; Fedorov, Georgy; Moskotin, Maksim; Danilov, Sergey; Ganichev, Sergey; Goltsman, Gregory | ||||
| Title | Gate-mediated helicity sensitive detectors of terahertz radiation with graphene-based field effect transistors | Type | Abstract | ||
| Year | 2020 | Publication | Graphene and 2dm Virt. Conf. | Abbreviated Journal | Graphene and 2DM Virt. Conf. |
| Volume | Issue | Pages | |||
| Keywords | single layer graphene, SLG, CVD, plasmons, FET | ||||
| Abstract |
Closing of the so-called terahertz gap results in an increased demand for optoelectronic devices operating in the frequency range from 0.1 to 10 THz. Active plasmonic in field effect devices based on high-mobility two-dimensional electron gas (2DEG) opens up opportunities for creation of on-chip spectrum [1] and polarization [2] analysers. Here we show that single layer graphene (SLG) grown using CVD method can be used for an all-electric helicity sensitive polarization broad analyser of THz radiation. Allourresults show plasmonic nature of response. Devices are made in a configuration ofa field-effect transistor (FET) with a graphene channel that has a length of 2 mkm and a width of 5.5 mkm. Response of opposite polarity to clockwise and anticlockwise polarized radiation is due to special antenna design (see Fig.1c) as follow works [2,3]. Our approaches can be extrapolated to other 2D materials and used as a tool to characterize plasmonic excitations in them. [1]Bandurin, D. A., etal.,Nature Communications, 9(1),(2018),1-8.[2]Drexler, C.,etal.,Journal of Applied Physics, 111(12),(2012),124504.[3]Gorbenko, I. V.,et al.,physica status solidi (RRL)–Rapid Research Letters, 13(3),(2019),1800464. | ||||
| Address | Grenoble, France | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | Graphene and 2dm Virtual Conference & Expo | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1743 | |||
| Permanent link to this record | |||||
| Author | Mohan, Nishant; Minaeva, Olga; Goltsman, Gregory N.; Saleh, Mohammed F.; Nasr, Magued B.; Sergienko, Alexander V.; Saleh, Bahaa E.; Teich, Malvin C. | ||||
| Title | Ultrabroadband coherence-domain imaging using parametric downconversion and superconducting single-photon detectors at 1064 nm | Type | Journal Article | ||
| Year | 2009 | Publication | Appl. Opt. | Abbreviated Journal | Appl. Opt. |
| Volume | 48 | Issue | 20 | Pages | 4009–4017 |
| Keywords | SSPD, SNSPD, SPAD | ||||
| Abstract |
Coherence-domain imaging systems can be operated in a single-photon-counting mode, offering low detector noise; this in turn leads to increased sensitivity for weak light sources and weakly reflecting samples. We have demonstrated that excellent axial resolution can be obtained in a photon-counting coherence-domain imaging (CDI) system that uses light generated via spontaneous parametric downconversion (SPDC) in a chirped periodically poled stoichiometric lithium tantalate (chirped-PPSLT) structure, in conjunction with a niobium nitride superconducting single-photon detector (SSPD). The bandwidth of the light generated via SPDC, as well as the bandwidth over which the SSPD is sensitive, can extend over a wavelength region that stretches from 700 to 1500 nm. This ultrabroad wavelength band offers a near-ideal combination of deep penetration and ultrahigh axial resolution for the imaging of biological tissue. The generation of SPDC light of adjustable bandwidth in the vicinity of 1064 nm, via the use of chirped-PPSLT structures, had not been previously achieved. To demonstrate the usefulness of this technique, we construct images for a hierarchy of samples of increasing complexity: a mirror, a nitrocellulose membrane, and a biological sample comprising onion-skin cells. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 652 | ||
| Permanent link to this record | |||||
| Author | Moshkova, M. A.; Divochiy, A. V.; Morozov, P. V.; Antipov, A. V.; Vakhtomin, Yu. B.; Smirnov, K. V. | ||||
| Title | Characterization of topologies of superconducting photon number resolving detectors | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. 8th Int. Conf. Photonics and Information Optics | Abbreviated Journal | Proc. 8th Int. Conf. Photonics and Information Optics |
| Volume | Issue | Pages | 465-466 | ||
| Keywords | PNR SSPD | ||||
| Abstract |
Comparative analysis for different topologies of superconducting single-photon detectors with ability to resolve up to 4 photons in a short pulse of IR radiation has been carry out. It was developed the detector with a system detection efficiency of ~ 85 % at λ = 1550 nm. The possibility of using such detector to restore photon statistics of a pulsed radiation source was demonstrated. | ||||
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| Language | Russian | Summary Language | Original Title | ||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-7262-2536-4 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | http://fioconf.mephi.ru/files/2018/12/FIO2019-Sbornik.pdf | Approved | no | ||
| Call Number | Serial | 1803 | |||
| Permanent link to this record | |||||
| Author | Il'in, K. S.; Karasik, B. S.; Ptitsina, N. G.; Sergeev, A. V.; Gol'tsman, G. N.; Gershenzon, E. M.; Pechen, E. V.; Krasnosvobodtsev, S. I. | ||||
| Title | Electron-phonon-impurity interference in thin NbC films: electron inelastic scattering time and corrections to resistivity | Type | Conference Article | ||
| Year | 1996 | Publication | Czech. J. Phys. | Abbreviated Journal | Czech. J. Phys. |
| Volume | 46 | Issue | S2 | Pages | 857-858 |
| Keywords | NbC films | ||||
| Abstract |
Complex study of transport properties of impure NbC films with the electron mean free pathl=0.6–13 nm show the crucial role of the electron-phonon-impurity interference (EPII). In the temperature range 20–70 K we found the interference correction to resistivity proportional to T2 and to the residual resistivity of the film. Using the comprehensive theory of EPII, we determine the electron coupling with transverse phonons and calculate the electron inelastic scattering time. Direct measurements of the inelastic electron scattering time using a response to a high-frequency amplitude modulated cw radiation agree well with the theory. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0011-4626 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1617 | |||
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| Author | Gayduchenko, I. A.; Fedorov, G. E.; Stepanova, T. S.; Titova, N.; Voronov, B. M.; But, D.; Coquillat, D.; Diakonova, N.; Knap, W.; Goltsman, G. N. | ||||
| Title | Asymmetric devices based on carbon nanotubes as detectors of sub-THz radiation | Type | Conference Article | ||
| Year | 2016 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 741 | Issue | Pages | 012143 (1 to 6) | |
| Keywords | carbon nanotubes, CNT | ||||
| Abstract |
Demand for efficient terahertz (THz) radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. In this work, we systematically investigate the response of asymmetric carbon nanodevices to sub-terahertz radiation using different sensing elements: from dense carbon nanotube (CNT) network to individual CNT. We conclude that the detectors based on individual CNTs both semiconducting and quasi-metallic demonstrate much stronger response in sub-THz region than detectors based on disordered CNT networks at room temperature. We also demonstrate the possibility of using asymmetric detectors based on CNT for imaging in the THz range at room temperature. Further optimization of the device configuration may result in appearance of novel terahertz radiation detectors. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1336 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I.; Kardakova, A.; Fedorov, G.; Voronov, B.; Finkel, M.; Jiménez, D.; Morozov, S.; Presniakov, M.; Goltsman, G. | ||||
| Title | Response of asymmetric carbon nanotube network devices to sub-terahertz and terahertz radiation | Type | Journal Article | ||
| Year | 2015 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 118 | Issue | 19 | Pages | 194303 |
| Keywords | terahertz detectors, asymmetric carbon nanotubes, CNT | ||||
| Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the asymmetric carbon nanostructures as a possible solution for that problem. It was maintained that photothermoelectric effect under certain conditions results in strong response of such devices to terahertz radiation even at room temperature. In this work, we investigate different mechanisms underlying the response of asymmetric carbon nanotube (CNT) based devices to sub-terahertz and terahertz radiation. Our structures are formed with CNT networks instead of individual CNTs so that effects probed are more generic and not caused by peculiarities of an individual nanoscale object. We conclude that the DC voltage response observed in our structures is not only thermal in origin. So called diode-type response caused by asymmetry of the device IV characteristic turns out to be dominant at room temperature. Quantitative analysis provides further routes for the optimization of the device configuration, which may result in appearance of novel terahertz radiation detectors. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1169 | |||
| Permanent link to this record | |||||
| Author | Gayduchenko, I.; Fedorov, G.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Towards to the development of THz detectors based on carbon nanostructures | Type | Conference Article | ||
| Year | 2018 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
| Volume | 1092 | Issue | Pages | 012039 (1 to 4) | |
| Keywords | CVD graphene, carbon nanotubes, CNT, field effect transistors, FET, THz detectors | ||||
| Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of detectors with sensor elements based on CVD graphene as well as its derivatives – carbon nanotubes (CNTs). The devices are made in configuration of field effect transistors (FET) with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes. We show that at 300K semiconducting CNTs show better performance up to 300GHz with responsivity up to 100V/W, while quasi-metallic CNTs are shown to operate up to 2.5THz. At 300 K graphene detector exhibit the room-temperature responsivity from R = 15 V/W at f = 129 GHz to R = 3 V/W at f = 450 GHz. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1742-6588 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1302 | |||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Gayduchenko, I.; Titova, N.; Moskotin, M.; Obraztsova, E.; Rybin, M.; Goltsman, G. | ||||
| Title | Graphene-based lateral Schottky diodes for detecting terahertz radiation | Type | Conference Article | ||
| Year | 2018 | Publication | Proc. Optical Sensing and Detection V | Abbreviated Journal | Proc. Optical Sensing and Detection V |
| Volume | 10680 | Issue | Pages | 30-39 | |
| Keywords | graphene, terahertz radiation, detectors, Schottky diodes, carbon nanotubes, plasma waves | ||||
| Abstract |
Demand for efficient terahertz radiation detectors resulted in intensive study of the carbon nanostructures as possible solution for that problem. In this work we investigate the response to sub-terahertz radiation of graphene field effect transistors of two configurations. The devices of the first type are based on single layer CVD graphene with asymmetric source and drain (vanadium and gold) contacts and operate as lateral Schottky diodes (LSD). The devices of the second type are made in so-called Dyakonov-Shur configuration in which the radiation is coupled through a spiral antenna to source and top electrodes. We show that at 300 K the LSD detector exhibit the room-temperature responsivity from R = 15 V/W at f= 129 GHz to R = 3 V/W at f = 450 GHz. The DS detector responsivity is markedly lower (2 V/W) and practically frequency independent in the investigated range. We find that at low temperatures (77K) the graphene lateral Schottky diodes responsivity rises with the increasing frequency of the incident sub-THz radiation. We interpret this result as a manifestation of a plasmonic effect in the devices with the relatively long plasmonic wavelengths. The obtained data allows for determination of the most promising directions of development of the technology of nanocarbon structures for the detection of THz radiation. | ||||
| Address | |||||
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| Publisher | Spie | Place of Publication | Editor | Berghmans, F.; Mignani, A.G. | |
| Language | Summary Language | Original Title | |||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 10.1117/12.2307020 | Serial | 1306 | ||
| Permanent link to this record | |||||
| Author | Fedorov, G.; Gayduchenko, I.; Titova, N.; Gazaliev, A.; Moskotin, M.; Kaurova, N.; Voronov, B.; Goltsman, G. | ||||
| Title | Carbon nanotube based schottky diodes as uncooled terahertz radiation detectors | Type | Journal Article | ||
| Year | 2018 | Publication | Phys. Status Solidi B | Abbreviated Journal | Phys. Status Solidi B |
| Volume | 255 | Issue | 1 | Pages | 1700227 (1 to 6) |
| Keywords | carbon nanotube schottky diodes, CNT | ||||
| Abstract |
Despite the intensive development of the terahertz technologies in the last decade, there is still a shortage of efficient room‐temperature radiation detectors. Carbon nanotubes (CNTs) are considered as a very promising material possessing many of the features peculiar for graphene (suppression of backscattering, high mobility, etc.) combined with a bandgap in the carrier spectrum. In this paper, we investigate the possibility to incorporate individual CNTs into devices that are similar to Schottky diodes. The latter is currently used to detect radiation with a frequency up to 50 GHz. We report results obtained with semiconducting (bandgap of about 0.5 eV) and quasi‐metallic (bandgap of few meV) single‐walled carbon nanotubes (SWNTs). Semiconducting CNTs show better performance up to 300 GHz with responsivity up to 100 V W−1, while quasi‐metallic CNTs are shown to operate up to 2.5 THz. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0370-1972 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1321 | |||
| Permanent link to this record | |||||
| Author | Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N. | ||||
| Title | A fast infrared detector based on patterned YBCO thin film | Type | Journal Article | ||
| Year | 1994 | Publication | Supercond. Sci. Technol. | Abbreviated Journal | Supercond. Sci. Technol. |
| Volume | 7 | Issue | 5 | Pages | 321-323 |
| Keywords | YBCO HTS detector | ||||
| Abstract |
Detectors for infrared radiation ( lambda =0.85 mu m) were made of 50 nm thick YBa2Cu3O7- delta films on LaAlO3 and MgO or 60 nm thick films on NdGaO3. Parallel strips (1 mu m wide by 20 mu m long) were patterned in the films and formed the active device. These devices were designed to detect short infrared laser pulses by electron heating. The detectors were current biased into the resistive and the normal states. The response was studied in direct pulse measurements as well as by amplitude modulation of a laser. The pulse measurements showed a fast picosecond response followed by a slower decay related to phonon escape through the film-substrate interface and heat diffusion in the substrate. The frequency spectra up to 10 GHz showed two slopes with a knee corresponding to the phonon escape time. | ||||
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| Language | Summary Language | Original Title | |||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0953-2048 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1646 | |||
| Permanent link to this record | |||||
| Author | Kinev, N. V.; Filippenko, L. V.; Ozhegov, R. V.; Gorshkov, K. N.; Gol’tsman, G. N.; Koshelets, V. P. | ||||
| Title | Superconducting integrated receiver with HEB-mixer | Type | Abstract | ||
| Year | 2014 | Publication | Proc. 25th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 25th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 78 | ||
| Keywords | NbN HEB mixer, SIR, superconducting integrated receiver | ||||
| Abstract |
Detectors in THz range with high sensitivity are very essential nowadays in different fields: space technology, atmospheric research, medicine and security. The most sensitive heterodyne detectors below 1 THz are the SIS- mixers due to its extremely high non-linearity and low noise level. Nevertheless, their effective range is strongly limited by superconducting gap Δ (about 1 THz for NbN circuits). Above 1 THz the detectors based on HEB (hot electron bolometers) are more effective [1]; their operation frequency is not limited from above and can be up to 70 THz [2]. HEBs can perform as both direct and heterodyne detectors (mixers). All HEB-mixers are used with external heterodyne, most useful are synthesizer with multipliers, quantum cascade lasers or far infrared lasers and backward-wave oscillators. Superconducting integrated receiver (SIR) is based on implementation of both SIS-miser and flux flow oscillator (FFO) acting as heterodyne at single chip [3]. Such receiver has been successfully applied at TELIS balloon-borne instrument for study of atmospheric constituents [4] and looks as very promising device for other THz missions including space research. Thus, there is a task to expand its operating range to higher frequencies. The frequency range of the SIR the operation is limited by both the SIS-mixer and the FFO maximum frequencies. The idea of present work is implementation of the HEB as a mixer in the SIR instead of the SIS traditionally used. We introduce the first results of integrating the HEB-mixer coupled to planar slot antenna with the FFO on one chip. For properly FFO operation the SIS harmonic mixer is used to phase lock the oscillator. The scheme of the SIR based on the HEB- mixer is presented in fig. 1. We have demonstrated the principal possibility of integration of both the HEB-mixer and the flux-flow oscillator on a single chip and succeed with sufficient power coupling for properly receiver operation. We measured the direct response of the HEB coupled to the antenna at THz frequencies by the FTS setup and noise temperature of the receiver with standard Y- factor measuring technique. The SIR operating range 450-620 GHz was achieved with the best uncorrected noise temperature of about 1000 К. One should note that it is still quite low frequencies for effective operation of the HEB-mixer; therefore we expect to obtain the better results for frequencies above 700 GHz (up to 1.2 THz). Another additional task is to increase the FFO frequencies by using NbTiN electrodes instead of NbN; currently we are working on this issue. This work was supported by the RFBR grant, the Ministry of Education and Science of Russia and Russian Academy of Sciences. References 1. D. Semenov, H.-W. Hubers, J. Schubert, G. N. Gol’tsman, A. I. Elantiev, B. M. Voronov, E. M. Gershenzon, Design and performance of the lattice-cooled hot-electron terahertz mixer, J. Appl. Phys. 88, 6758, 2000. 2. Maslennikov S. N., Finkel M. I., Antipov S. V. et al. Spiral antenna coupled and directly coupled NbN HEB mixers in the frequency range from 1 to 70THz. Proc. 17 th international symposium on space terahertz technology. Paris, France: 2006.—may. Pp. 177 – 179. 3. V.P. Koshelets, S.V. Shitov. Integrated Superconducting Receivers. Supercond. Sci. Technol. Vol. 13. P. R53-R59. 2000. 4. Gert de Lange, Dick Boersma, Johannes Dercksen et.al. Development and Characterization of the Superconducting Integrated Receiver Channel of the TELIS Atmospheric Sounder. Supercond. Sci. Technol. vol. 23, No 4, 045016 (8pp). 2010. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1363 | |||
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| Author | Semenov, A. D.; Sergeev, A. V.; Kouminov, P.; Goghidze, I. G.; Heusinger, M. A.; Nebosis, R. S.; Gol'tsman, G. N.; Gershenzon, E. M.; Renk, K. F. | ||||
| Title | Transparency of YBCO film/substrate interfaces for thermal phonons determined by photoresponse measurements | Type | Conference Article | ||
| Year | 1993 | Publication | Proc. 1st European Conf. on Appl. Supercond. | Abbreviated Journal | Proc. 1st European Conf. on Appl. Supercond. |
| Volume | 2 | Issue | Pages | 1443-1446 | |
| Keywords | YBCO HTS detectors | ||||
| Abstract |
Direct measurements of the thermal boundary resistance were performed by means of the stationary method. In this approach the temperature of an electrically heated film is controlled by its dc resistance while an additional film on the same substrate is used as a thermometer monitoring substrate temperature. The temperature field in the substrate is then calculated to deduce the Kapitza temperature step at the interface between the heated strip and the substrate. The main statement of all afore-said papers is that experimental values of the thermal boundary resistance are too large to be explained by the acoustic mismatch model. In this paper we investigate transparency of YBaCuO film/substrate interfaces for thermal phonons by means of photoresponse measurements. We show that our data are in reasonable agreement with the acoustic mismatch theory. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | Freyhardt, H. C. | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 3-88355-197-X | Medium | ||
| Area | Expedition | Conference | 1st European conference on applied superconductivity | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1661 | |||
| Permanent link to this record | |||||
| Author | Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, M.; Krocka, M.; Mair, U.; Smirnov, K.; Gol’tsman, G.; Voronov, B. | ||||
| Title | Terahertz Heterodyn Receiver with a hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2002 | Publication | Far-IR, Sub-mm & MM Detector Technology Workshop | Abbreviated Journal | Far-IR, Sub-mm & MM Detector Technology Workshop |
| Volume | Issue | Pages | 3-24 | ||
| Keywords | NbN HEB mixers | ||||
| Abstract |
During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA) [1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR. | ||||
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| Publisher | NASA | Place of Publication | Editor | Wolf, U.; Farhoomand, J.; McCreight, C.R. | |
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | NASA CP | Abbreviated Series Title | ||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Volume: 211408 | Approved | no | ||
| Call Number | Serial | 1537 | |||
| Permanent link to this record | |||||
| Author | Hübers, H.-W.; Semenov, A.; Richter, H.; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, K.; Gol'tsman, G.; Voronov, B. | ||||
| Title | Terahertz heterodyne receiver with a hot-electron bolometer mixer | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop | Abbreviated Journal | Proc. Far-IR, Sub-mm, and mm Detector Technology Workshop |
| Volume | Issue | Pages | |||
| Keywords | NbN HEB mixers | ||||
| Abstract |
During the past decade major advances have been made regarding low noise mixers for terahertz (THz) heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a µW power from the local oscillator (LO). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, are of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated the performance of the receiver. This yields important information for the development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA)[1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR. | ||||
| Address | Monterey, CA, USA | ||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | Wold, J.; Davidson, J. | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
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| Area | Expedition | Conference | |||
| Notes | 4 pages; Unconfirmed but cited in https://kups.ub.uni-koeln.de/1622/1/bedorf.pdf; There is a Program of the Workshop: https://www.yumpu.com/en/document/view/7411055/far-ir-submm-mm-detector-technology-workshop-sofia-usra (there is no title of this article in the Program); There is also identical publication in Proc. ISSTT (Serial: 332, “A broadband terahertz heterodyne receiver with an NbN HEB mixer”). | Approved | no | ||
| Call Number | Serial | 1829 | |||
| Permanent link to this record | |||||
| Author | Semenov, Alexei; Hübers, Heinz.-Wilhelm; Richter, Heiko; Birk, Manfred; Krocka, Michael; Mair, Ulrich; Smirnov, Konstantin; Gol'tsman, Grigory; Voronov, Boris | ||||
| Title | Performance of terahertz heterodyne receiver with a superconducting hot-electron mixer | Type | Conference Article | ||
| Year | 2002 | Publication | Proc. 13th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 13th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 229-234 | ||
| Keywords | |||||
| Abstract |
During the past decade major advances have been made regarding low noise mixers for terahertz heterodyne receivers. State of the art hot-electron-bolometer (HEB) mixers have noise temperatures close to the quantum limit and require less than a microwatt power from the local oscillator (L0). The technology is now at a point where the performance of a practical receiver employing such mixer, rather than the figures of merit of the mixer itself, is of major concern. We have incorporated a phonon-cooled NbN HEB mixer in a 2.5 THz heterodyne receiver and investigated its performance. This yields important information for future development of heterodyne receivers such as GREAT (German receiver for astronomy at THz frequencies aboard SOFIA) [1] and TELIS (Terahertz limb sounder), a balloon borne heterodyne receiver for atmospheric research [2]. Both are currently under development at DLR. | ||||
| Address | |||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1529 | |||
| Permanent link to this record | |||||
| Author | Jukna, A.; Kitaygorsky, J.; Pan, D.; Cross, A.; Perlman, A.; Komissarov, I.; Sobolewski, R.; Okunev, O.; Smirnov, K.; Korneev, A.; Chulkova, G.; Milostnaya, I.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Dynamics of hotspot formation in nanostructured superconducting stripes excited with single photons | Type | Journal Article | ||
| Year | 2008 | Publication | Acta Physica Polonica A | Abbreviated Journal | Acta Physica Polonica A |
| Volume | 113 | Issue | 3 | Pages | 955-958 |
| Keywords | SSPD, SNSPD | ||||
| Abstract |
Dynamics of a resistive hotspot formation by near-infrared-wavelength single photons in nanowire-type superconducting NbN stripes was investigated. Numerical simulations of ultrafast thermalization of photon-excited nonequilibrium quasiparticles, their multiplication and out-diffusion from a site of the photon absorption demonstrate that 1.55 μm wavelength photons create in an ultrathin, two-dimensional superconducting film a resistive hotspot with the diameter which depends on the photon energy, and the nanowire temperature and biasing conditions. Our hotspot model indicates that under the subcritical current bias of the 2D stripe, the electric field penetrates the superconductor at the hotspot boundary, leading to suppression of the stripe superconducting properties and accelerated development of a voltage transient across the stripe. | ||||
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| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1414 | |||
| Permanent link to this record | |||||
| Author | Maslennikov, S. N.; Morozov, D. V.; Ozhegov, R. V.; Smirnov, K. V.; Okunev, O. V.; Gol’tsman, G. N. | ||||
| Title | Imaging system for submillimeter wave range based on AlGaAs/GaAs hot electron bolometer mixers | Type | Conference Article | ||
| Year | 2004 | Publication | Proc. 5-th MSMW | Abbreviated Journal | Proc. 5-th MSMW |
| Volume | 2 | Issue | Pages | 558-560 | |
| Keywords | AlGaAs/GaAs HEB mixers | ||||
| Abstract |
Electromagnetic radiation of the submillimeter (SMM) range is dispersed and absorbed significantly less than infrared (IR) radiation when passing through different objects. That is the reason for the development of an SMM imaging system. In this paper, we discuss the design of an SMM heterodyne imager, based on a matrix of AlGaAs/GaAs heterostructure hot electron bolometer mixers (HEB) with relatively high (about 77 K) operating temperature. The predicted double side band (DSB) noise temperature is about 1000 K and optimal local oscillator (LO) power is about 1 /spl mu/W for such mixers, which seems to be quite prospective for an SMM heterodyne imager. | ||||
| Address | Kharkov, Ukraine | ||||
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| Area | Expedition | Conference | The Fifth International Kharkov Symposium on Physics and Engineering of Microwaves, Millimeter, and Submillimeter Waves (IEEE Cat. No.04EX828) | ||
| Notes | Approved | no | |||
| Call Number | Serial | 1487 | |||
| Permanent link to this record | |||||
| Author | Gousev, Y. P.; Semenov, A. D.; Gol'tsman, G. N.; Sergeev, A. V.; Gershenzon, E. M. | ||||
| Title | Electron-phonon interaction in disordered NbN films | Type | Journal Article | ||
| Year | 1994 | Publication | Phys. B Condens. Mat. | Abbreviated Journal | Phys. B Condens. Mat. |
| Volume | 194-196 | Issue | Pages | 1355-1356 | |
| Keywords | NbN films | ||||
| Abstract |
Electron-phonon interaction time has been investigated in disordered films of NbN. A temperatures below 5.5 K tau_eph ~ T -1"6 which is attributed to the renormalisation of phonon spectrum in thin films. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0921-4526 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1649 | |||
| Permanent link to this record | |||||
| Author | Sergeev, A.; Mitin, V. | ||||
| Title | Electron-phonon interaction in disordered conductors: Static and vibrating scattering potentials | Type | Journal Article | ||
| Year | 2000 | Publication | Phys. Rev. B. | Abbreviated Journal | Phys. Rev. B. |
| Volume | 61 | Issue | 9 | Pages | 6041-6047 |
| Keywords | disordered conductors, scattering potential, electron-phonon interaction | ||||
| Abstract |
Employing the Keldysh diagram technique, we calculate the electron-phonon energy relaxation rate in a conductor with the vibrating and static δ-correlated random electron-scattering potentials. If the scattering potential is completely dragged by phonons, this model yields the Schmid’s result for the inelastic electron-scattering rate τ−1e−ph. At low temperatures the effective interaction decreases due to disorder, and τ−1e−ph∝T4l (l is the electron mean-free path). In the presense of the static potential, quantum interference of numerous scattering processes drastically changes the effective electron-phonon interaction. In particular, at low temperatures the interaction increases, and τ−1e−ph∝T2/l. Along with an enhancement of the interaction, which is observed in disordered metallic films and semiconducting structures at low temperatures, the suggested model allows us to explain the strong sensitivity of the electron relaxation rate to the microscopic quality of a particular film. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0163-1829 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 307 | |||
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| Author | Danerud, M.; Winkler, D.; Lindgren, M.; Zorin, M.; Trifonov, V.; Karasik, B. S.; Gol’tsman, G. N.; Gershenzon, E. M. | ||||
| Title | Nonequilibrium and bolometric photoresponse in patterned YBa2Cu3O7−δ thin films | Type | Journal Article | ||
| Year | 1994 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 76 | Issue | 3 | Pages | 1902-1909 |
| Keywords | YBCO HTS HEB detector, nonequilibrium response | ||||
| Abstract |
Epitaxial laser deposited YBa2Cu3O7−δ films of ∼50 nm thickness were patterned into detectors consisting of ten parallel 1 μm wide strips in order to study nonequilibrium and bolometric effects. Typically, the patterned samples had critical temperatures around 86 K, transition widths around 2 K and critical current densities above 1×106A/cm2 at 77 K. Pulsed laser measurements at 0.8 μm wavelength (17 ps full width at half maximum) showed a ∼30 ps response, attributed to electron heating, followed by a slower bolometric decay. Amplitude modulation in the band fmod=100 kHz–10 GHz of a laser with wavelength λ=0.8 μm showed two different thermal relaxations in the photoresponse. Phonon escape from the film (∼3 ns) is the limiting process, followed by heat diffusion in the substrate. Similar relaxations were also seen for λ=10.6 μm. The photoresponse measurements were made with the film in the resistive state and extended into the normal state. These states were created by supercritical bias currents. Measurements between 75 and 95 K (i.e., from below to above Tc) showed that the photoresponse was proportional to dR/dT for fmod=1 MHz and 4 GHz. The fast response is limited by the electron‐phonon scattering time, estimated to 1.8 ps from experimental data. The responsivity both at 0.8 and 10.6 μm wavelength was ∼1.2 V/W at fmod=1 GHz and the noise equivalent power was calculated to 1.5×10−9 WHz−1/2 for the fast response. | ||||
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| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1637 | |||
| Permanent link to this record | |||||
| Author | Morozov, D. V.; Smirnov, K. V.; Smirnov, A. V.; Lyakhov, V. A.; Goltsman, G. N. | ||||
| Title | A millimeter-submillimeter phonon-cooled hot-electron bolometer mixer based on two-dimensional electron gas in an AlGaAs/GaAs heterostructure | Type | Journal Article | ||
| Year | 2005 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 39 | Issue | 9 | Pages | 1082-1086 |
| Keywords | 2D electron gas, AlGaAs/GaAs heterostructures, mixers | ||||
| Abstract |
Experimental results obtained by studying the main characteristics of a millimeter-submillimeter wave mixer based on the hot-electron effect in a two-dimensional electron gas in a AlGaAs/GaAs heterostructure with a phonon-scattering cooling mechanism for charge carriers are reported. The gain bandwidth of the mixer is 4 GHz, the internal conversion losses are 13 dB, and the optimum local-oscillator power is 0.5 μW (for a mixer area of 1 μm2). It is shown that a millimeter-submillimeter-wave receiver with a noise temperature of 1900 K can be developed on the basis of a AlGaAs/GaAs mixer. This mixer also appears to be promising for use in array receiver elements. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7826 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1463 | |||
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| Author | Gol’tsman, G. N.; Smirnov, K.; Kouminov, P.; Voronov, B.; Kaurova, N.; Drakinsky, V.; Zhang, J.; Verevkin, A.; Sobolewski, R. | ||||
| Title | Fabrication of nanostructured superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2003 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 13 | Issue | 2 | Pages | 192-195 |
| Keywords | NbN SSPD, SNSPD | ||||
| Abstract |
Fabrication of NbN superconducting single-photon detectors, based on the hotspot effect is presented. The hotspot formation arises in an ultrathin and submicrometer-width superconductor stripe and, together with the supercurrent redistribution, leads to the resistive detector response upon absorption of a photon. The detector has a meander structure to maximally increase its active area and reach the highest detection efficiency. Main processing steps, leading to efficient devices, sensitive in 0.4-5 /spl mu/m wavelength range, are presented. The impact of various processing steps on the performance and operational parameters of our detectors is discussed. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 1558-2515 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1515 | |||
| Permanent link to this record | |||||
| Author | Voronov, B. M.; Gershenzon, E. M.; Gol'tsman, G. N.; Gogidze, I. G.; Gusev, Yu. P.; Zorin, M. A.; Sejdman, L. A.; Semenov, A. D. | ||||
| Title | Picosecond range detector base on superconducting niobium nitride film sensitive to radiation in spectral range from millimeter waves up to visible light | Type | Journal Article | ||
| Year | 1992 | Publication | Sverkhprovodimost': Fizika, Khimiya, Tekhnika | Abbreviated Journal | Sverkhprovodimost': Fizika, Khimiya, Tekhnika |
| Volume | 5 | Issue | 5 | Pages | 955-960 |
| Keywords | NbN HEB detectors | ||||
| Abstract |
Fast-operating picosecond detector of electromagnetical radiation is developed on the basis of fine superconducting film of niobium nitride with high sensitivity within spectral range from millimetric waves up to visible light. Detector sensitive element represents structure covering narrow parallel strips with micron sizes included in the rupture of microstrip line. Detecting ability of the detector and time constant measured using amplitude-simulated radiation of reverse wave tubes and pulse radiation of picosecond gas and solid-body lasers, constitute D*≅1010 W-1·cm·Hz-1/2 and τ≤5 ps respectively, at 10 K temperature. The expected value of time constant of the detector at 10 K obtained via extrapolation of directly measured dependence that is, τ ∝ τ-1, constitutes 20 ps. Experimental data demonstrate that detection mechanism is linked with electron heating effect. | ||||
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| Language | Russian | Summary Language | Original Title | ||
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| Series Volume | Series Issue | Edition | |||
| ISSN | 0131-5366 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1670 | |||
| Permanent link to this record | |||||
| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Silicon room temperature IR detectors coated with Ag2S quantum dots | Type | Conference Article | ||
| Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
| Volume | Issue | Pages | 369-371 | ||
| Keywords | silicon detector, quantum dot, IR, surface states | ||||
| Abstract |
For decades silicon has been the chief technological semiconducting material of modern microelectronics. Application of silicon detectors in optoelectronic devices are limited to the visible and near infrared ranges, due to their transparency for radiation with a wavelength higher than 1.1 μm. The expansion Si absorption towards longer wave lengths is a considerable interest to optoelectronic applications. In this work we present an elegant and effective solution to this problem using Ag2S quantum dots, creating impurity states in Si to cause sub-band gap photon absorption. The sensitivity of room temperature zero-bias Si_Ag2S detectors, which we obtained is 1011 cmHzW . Given the variety of QDs parameters such as: material, dimensions, our results open a path towards the future study and development of Si detectors for technological applications. | ||||
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| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | 978-5-89513-451-1 | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1154 | |||
| Permanent link to this record | |||||
| Author | Tretyakov, I.; Shurakov, A.; Perepelitsa, A.; Kaurova, N.; Svyatodukh, S.; Zilberley, T.; Ryabchun, S.; Smirnov, M.; Ovchinnikov, O.; Goltsman, G. | ||||
| Title | Room temperature silicon detector for IR range coated with Ag2S quantum dots | Type | Journal Article | ||
| Year | 2019 | Publication | Phys. Status Solidi RRL | Abbreviated Journal | Phys. Status Solidi RRL |
| Volume | 13 | Issue | 9 | Pages | 1900187-(1-6) |
| Keywords | |||||
| Abstract |
For decades, silicon has been the chief technological semiconducting material of modern microelectronics and has a strong influence on all aspects of the society. Applications of Si-based optoelectronic devices are limited to the visible and near infrared (IR) ranges. For photons with an energy less than 1.12 eV, silicon is almost transparent. The expansion of the Si absorption to shorter wavelengths of the IR range is of considerable interest for optoelectronic applications. By creating impurity states in Si, it is possible to cause sub-bandgap photon absorption. Herein, an elegant and effective technology of extending the photo-response of Si toward the IR range is presented. This approach is based on the use of Ag 2 S quantum dots (QDs) planted on the surface of Si to create impurity states in the Si bandgap. The specific sensitivity of the room temperature zero-bias Si_Ag 2 Sp detector is 10 11 cm Hz W 1 at 1.55 μm. Given the variety of available QDs and the ease of extending the photo-response of Si toward the IR range, these findings open a path toward future studies and development of Si detectors for technological applications. The current research at the interface of physics and chemistry is also of fundamental importance to the development of Si optoelectronics. | ||||
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| ISSN | 1862-6254 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1149 | |||
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| Author | Gershenzon, E. M.; Gol'tsman, G. N.; Karasik, B. S.; Semenov, A. D. | ||||
| Title | Measurement of the energy gap in the compound YBaCu3O9-δ on the basis of the IR absorption spectrum | Type | Journal Article | ||
| Year | 1987 | Publication | JETP Lett. | Abbreviated Journal | JETP Lett. |
| Volume | 46 | Issue | 5 | Pages | 237-238 |
| Keywords | YBCO HTS detectors | ||||
| Abstract |
For the first time the long-wave infrared absorption spectrum has been measured by means of the bolometric effect and energy gap for high-temperature superconducting ceramics YBa/sub 2/Cu/sub 3/O/sub 9-delta/ has been determined from absorption threshold. 2delta/kT/sub c/ value is equal to 0.6. | ||||
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| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1703 | |||
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