| Home | [1–10] << 11 12 13 14 15 16 17 18 19 20 >> [21–22] |
|
| Records | |||||
|---|---|---|---|---|---|
| Author | Lobanov, Y.V.; Tong, C.-Y.E.; Hedden, A.S.; Blundell, R.; Voronov, B.M.; Gol'tsman, G.N. | ||||
| Title | Direct measurement of the gain and noise bandwidths of HEB mixers | Type | Journal Article | ||
| Year | 2011 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 21 | Issue | 3 | Pages | 645-648 |
| Keywords | waveguide NbN HEB mixers | ||||
Abstract  |
The intermediate frequency (IF) bandwidth of a hot electron bolometer (HEB) mixer is an important parameter of the mixer, in that it helps to determine its suitability for a given application. With the availability of wideband low noise amplifiers, it is simple to measure the performance of an HEB mixer over a wide range of IF at a fixed LO frequency using the standard Y-factor method. This in-situ method allows us to measure both the gain and noise bandwidths simultaneously. We have also measured mixer output impedance with a vector network analyser. Intrinsic time constant has been extracted from the impedance data and compared to the mixer's bandwidths determined from receiver Y-factor measurement. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | RPLAB @ gujma @ | Serial | 720 | ||
| Permanent link to this record | |||||
| Author | Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. | ||||
| Title | Performance of NbN lattice‐cooled hot‐electron bolometric mixers | Type | Journal Article | ||
| Year | 1996 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 80 | Issue | 7 | Pages | 4232-4234 |
| Keywords | NbN HEB mixers | ||||
| Abstract |
The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1607 | |||
| Permanent link to this record | |||||
| Author | Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. | ||||
| Title | Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes | Type | Journal Article | ||
| Year | 2007 | Publication | J. Appl. Phys. | Abbreviated Journal | J. Appl. Phys. |
| Volume | 101 | Issue | 12 | Pages | 124508 (1 to 6) |
| Keywords | HEB, mixer, membrane | ||||
| Abstract |
The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0021-8979 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 560 | |||
| Permanent link to this record | |||||
| Author | Schwaab, G.W.; Sirmain, G.; Schubert, J.; Hubers, H.-W.; Gol'tsman, G.; Cherednichenko, S.; Verevkin, A.; Voronov, B.; Gershenzon, E. | ||||
| Title | Investigation of NbN phonon-cooled HEB mixers at 2.5 THz | Type | Journal Article | ||
| Year | 1999 | Publication | IEEE Trans. Appl. Supercond. | Abbreviated Journal | IEEE Trans. Appl. Supercond. |
| Volume | 9 | Issue | 2 | Pages | 4233-4236 |
| Keywords | NbN HEB mixers | ||||
| Abstract |
The development of superconducting hot electron bolometric (HEB) mixers has been a big step forward in the direction of quantum noise limited mixer performance at THz frequencies. Such mixers are crucial for the upcoming generation of airborne and spaceborne THz heterodyne receivers. In this paper we report on new results on a phonon-cooled NbN HEB mixer using e-beam lithography. The superconducting film is 3 nm thick. The mixer is 0.2 μm long and 1.5 μm wide and it is integrated in a spiral antenna on a Si substrate. The device is quasi-optically coupled through a Si lens and a dielectric beam combiner to the radiation of an optically pumped FIR ring gas laser cavity. The performance of the mixer at different THz frequencies from 0.69 to 2.55 THz with an emphasis on 2.52 THz is demonstrated. At 2.52 THz minimum DSB noise temperatures of 4200 K have been achieved at an IF of 1.5 GHz and a bandwidth of 40 MHz with the mixer mounted in a cryostat and a 0.8 m long signal path in air. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1051-8223 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 550 | |||
| Permanent link to this record | |||||
| Author | Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Yu. B.; Svechnikov, S. I.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Yu. P.; Kaurova, N. S.; Voronov, B. M.; Gol'tsman, G. N. | ||||
| Title | Hot electron bolometer mixer for 20 – 40 THz frequency range | Type | Conference Article | ||
| Year | 2005 | Publication | Proc. 16th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 16th Int. Symp. Space Terahertz Technol. |
| Volume | Issue | Pages | 393-397 | ||
| Keywords | IR NbN HEB mixers | ||||
| Abstract |
The developed HEB mixer was based on a 5 nm thick NbN film deposited on a GaAs substrate. The active area of the film was patterned as a 30×20 μm 2 strip and coupled with a 50 Ohm coplanar line deposited in situ. An extended hemispherical germanium lens was used to focus the LO radiation on the mixer. The responsivity of the mixer was measured in a direct detection mode in the 25÷64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 μm wavelength CW CO 2 laser was utilized as a local oscillator. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Göteborg, Sweden | Editor | ||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 369 | |||
| Permanent link to this record | |||||
| Author | Svechnikov, S. I.; Finkel, M. I.; Maslennikov, S. N.; Vachtomin, Y. B.; Smirnov, K. V.; Seleznev, V. A.; Korotetskaya, Y. P.; Kaurova, N. S.; Voronov, B. M.; Gol’tsman, G. N. | ||||
| Title | Superconducting hot electron bolometer mixer for middle IR range | Type | Conference Article | ||
| Year | 2006 | Publication | Proc. 16th Int. Crimean Microwave and Telecommunication Technology | Abbreviated Journal | Proc. 16th Int. Crimean Microwave and Telecommunication Technology |
| Volume | 2 | Issue | Pages | 686-687 | |
| Keywords | IR NbN HEB mixer, detector, GaAs substrate | ||||
| Abstract |
The developed directly lens coupled hot electron bolometer (HEB) mixer was based on 5 nm superconducting NbN deposited on GaAs substrate. The layout of the structure, including 30x20 mcm^2 active area coupled with a 50 Ohm coplanar line, was patterned by photolithography. The responsivity of the mixer was measured in a direct detection mode in the 25-64 THz frequency range. The noise performance of the mixer and the directivity of the receiver were investigated in a heterodyne mode. A 10.6 mum wavelength CW CO2 laser was utilized as a local oscillator. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | ISBN | Medium | |||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | 4023440 | Serial | 1297 | ||
| Permanent link to this record | |||||
| Author | Verevkin, A. A.; Ptitsina, N. G.; Smirnov, K. V.; Voronov, B. M.; Gol’tsman, G. N.; Gershenson, E. M.; Yngvesson, K. S. | ||||
| Title | Multiple Andreev reflection in hybrid AlGaAs/GaAs structures with superconducting NbN contacts | Type | Journal Article | ||
| Year | 1999 | Publication | Semicond. | Abbreviated Journal | Semicond. |
| Volume | 33 | Issue | 5 | Pages | 551-554 |
| Keywords | 2DEG, AlGaAs/GaAs heterostructures | ||||
| Abstract |
The conductivity of hybrid microstructures with superconducting contacts made of niobium nitride to a semiconductor with a two-dimensional electron gas in a AlGaAs/GaAs heterostructure has been investigated. Distinctive features of the behavior of the conductivity indicate the presence of multiple Andreev reflection at scattering centers in the normal region near the superconductor-semiconductor boundary. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 1063-7826 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1571 | |||
| Permanent link to this record | |||||
| Author | Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. | ||||
| Title | Superconducting single photon detectors made by local oxidation with an atomic force microscope | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 90 | Issue | 19 | Pages | 191116 (1 t0 3) |
| Keywords | SSPD | ||||
| Abstract |
The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K. The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 423 | |||
| Permanent link to this record | |||||
| Author | Gao, J. R.; Hajenius, M.; Tichelaar, F. D.; Klapwijk, T. M.; Voronov, B.; Grishin, E.; Gol’tsman, G.; Zorman, C. A.; Mehregany, M. | ||||
| Title | Monocrystalline NbN nanofilms on a 3C-SiC∕Si substrate | Type | Journal Article | ||
| Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
| Volume | 91 | Issue | 6 | Pages | 062504 (1 to 3) |
| Keywords | NbN films, nanofilms | ||||
| Abstract |
The authors have realized NbN (100) nanofilms on a 3C-SiC (100)/Si(100) substrate by dc reactive magnetron sputtering at 800°C. High-resolution transmission electron microscopy (HRTEM) is used to characterize the films, showing a monocrystalline structure and confirming epitaxial growth on the 3C-SiC layer. A film ranging in thickness from 3.4to4.1nm shows a superconducting transition temperature of 11.8K, which is the highest reported for NbN films of comparable thickness. The NbN nano-films on 3C-SiC offer a promising alternative to improve terahertz detectors. For comparison, NbN nanofilms grown directly on Si substrates are also studied by HRTEM. The authors acknowledge S. V. Svetchnikov at National Centre for HRTEM at Delft, who prepared the specimens for HRTEM inspections. This work was supported by the EU through RadioNet and INTAS. |
||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0003-6951 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1425 | |||
| Permanent link to this record | |||||
| Author | Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. | ||||
| Title | Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors | Type | Journal Article | ||
| Year | 2003 | Publication | Electron. Lett. | Abbreviated Journal | Electron. Lett. |
| Volume | 39 | Issue | 14 | Pages | 1086-1088 |
| Keywords | NbN SSPD, SNSPD, applications | ||||
| Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. | ||||
| Address | |||||
| Corporate Author | Thesis | ||||
| Publisher | Place of Publication | Editor | |||
| Language | Summary Language | Original Title | |||
| Series Editor | Series Title | Abbreviated Series Title | |||
| Series Volume | Series Issue | Edition | |||
| ISSN | 0013-5194 | ISBN | Medium | ||
| Area | Expedition | Conference | |||
| Notes | Approved | no | |||
| Call Number | Serial | 1512 | |||
| Permanent link to this record | |||||