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Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. |
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Title |
Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors |
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Journal Article |
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Year |
2003 |
Publication |
Electron. Lett. |
Abbreviated Journal |
Electron. Lett. |
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Volume |
39 |
Issue |
14 |
Pages |
1086-1088 |
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Keywords |
NbN SSPD, SNSPD, applications |
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Abstract |
The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. |
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0013-5194 |
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1512 |
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