Grotz, B., Hauf, M. V., Dankerl, M., Naydenov, B., Pezzagna, S., Meijer, J., et al. (2012). Charge state manipulation of qubits in diamond. Nat. Comm., 3(729), 6.
Abstract: The nitrogen-vacancy (NV) centre in diamond is a promising candidate for a solid-state qubit. However, its charge state is known to be unstable, discharging from the qubit state NV- into the neutral state NV0 under various circumstances. Here we demonstrate that the charge state can be controlled by an electrolytic gate electrode. This way, single centres can be switched from an unknown non-fluorescent state into the neutral charge state NV0, and the population of an ensemble of centres can be shifted from NV0 to NV-. Numerical simulations confirm the manipulation of the charge state to be induced by the gate-controlled shift of the Fermi level at the diamond surface. This result opens the way to a dynamic control of transitions between charge states and to explore hitherto inaccessible states, such as NV+.
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Mariantoni, M., Wang, H., Bialczak, R. C., Lenander, M., Lucero, E., Neeley, M., et al. (2011). Photon shell game in three-resonator circuit quantum electrodynamics. Nat. Phys., 7(4), 287–293.
Abstract: The generation and control of quantum states of light constitute fundamental tasks in cavity quantum electrodynamics (QED). The superconducting realization of cavity QED, circuit QED (refs 11, 12, 13, 14), enables on-chip microwave photonics, where superconducting qubits control and measure individual photon states. A long-standing issue in cavity QED is the coherent transfer of photons between two or more resonators. Here, we use circuit QED to implement a three-resonator architecture on a single chip, where the resonators are interconnected by two superconducting phase qubits. We use this circuit to shuffle one- and two-photon Fock states between the three resonators, and demonstrate qubit-mediated vacuum Rabi swaps between two resonators. By shuffling superposition states we are also able to demonstrate the high-fidelity phase coherence of the transfer. Our results illustrate the potential for using multi-resonator circuits as photon quantum registers and for creating multipartite entanglement between delocalized bosonic modes.
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Nevou, L., Liverini, V., Friedli, P., Castellano, F., Bismuto, A., Sigg, H., et al. (2011). Current quantization in an optically driven electron pump based on self-assembled quantum dots. Nat. Phys., 7, 423–427.
Abstract: The electronic structure of self-assembled semiconductor quantum dots consists of discrete atom-like states that can be populated with a well-defined number of electrons. This property can be used to fabricate a d.c. current standard that enables the unit of ampere to be independently defined. Here we report an optically pumped current source based on self-assembled InAs/GaAs quantum dots. The accuracy obtained so far is 10–1 and is limited by the uncertainty in the number of dots. At 10 K the device generates a current difference of 2.39 nA at a frequency of 1 kHz. The accuracy could be improved by site-selective growth techniques where the number of dots is fixed by pre-patterning. The results are promising for applications in electrical metrology, where a current standard is needed to close the so-called quantum metrological triangle.
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Konstantatos, G., & Sargent, E. H. (2010). Nanostructured materials for photon detection. Nat. Nanotech., 5(6), 391–400.
Abstract: The detection of photons underpins imaging, spectroscopy, fibre-optic communications and time-gated distance measurements. Nanostructured materials are attractive for detection applications because they can be integrated with conventional silicon electronics and flexible, large-area substrates, and can be processed from the solution phase using established techniques such as spin casting, spray coating and layer-by-layer deposition. In addition, their performance has improved rapidly in recent years. Here we review progress in light sensing using nanostructured materials, focusing on solution-processed materials such as colloidal quantum dots and metal nanoparticles. These devices exhibit phenomena such as absorption of ultraviolet light, plasmonic enhancement of absorption, size-based spectral tuning, multiexciton generation, and charge carrier storage in surface and interface traps.
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Santori, C., & Beausoleil, R. G. (2012). Quantum memory: Phonons in diamond crystals. Nat. Photon., 6, 10–12.
Abstract: The demonstration that quantum information can be stored in a bulk-diamond crystal in the form of an optically excited phonon gives researchers a new type of mechanical solid-state quantum memory to explore.
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Schmidt, M. A. (2012). Integration: Fibres embrace optoelectronics. Nat. Photon., 6(3), 143–145.
Abstract: The demonstration of an in-fibre semiconductor photodetector with gigahertz bandwidth bodes well for the future development of hybrid fibre optoelectronics.
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Yao, X. - C., Wang, T. - X., Xu, P., Lu, H., Pan, G. - S., Bao, X. - H., et al. (2012). Observation of eight-photon entanglement. Nat. Photon., 6(4), 225–228.
Abstract: The creation of increasingly large multipartite entangled states is not only a fundamental scientific endeavour in itself, but is also the enabling technology for quantum information. Tremendous experimental effort has been devoted to generating multiparticle entanglement with a growing number of qubits. So far, up to six spatially separated single photons have been entangled based on parametric downconversion. Multiple degrees of freedom of a single photon have been exploited to generate forms of hyper-entangled states. Here, using new ultra-bright sources of entangled photon pairs, an eight-photon interferometer and post-selection detection, we demonstrate for the first time the creation of an eight-photon Schrödinger cat state with genuine multipartite entanglement. The ability to control eight individual photons represents a step towards optical quantum computation, and will enable new experiments on, for example, quantum simulation, topological error correction and testing entanglement dynamics under decoherence.
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Kawano, Y., & Ishibashi, K. (2008). An on-chip near-field terahertz probe and detector. Nature Photon, 2(10), 618–621.
Abstract: The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging.
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Crespi, A., Ramponi, R., Osellame, R., Sansoni, L., Bongioanni, I., Sciarrino, F., et al. (2011). Integrated photonic quantum gates for polarization qubits. Nat. Comm., 2(566), 6.
Abstract: The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography.
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Kono, J. (2011). Coherent terahertz control. Nat. Photon., 5, 5–6.
Abstract: Spin and charge terahertz excitations in solids are promising for implementing future technologies such as spintronics and quantum computation, but coherently controlling them has been a significant challenge. Researchers have now manipulated coherent spin waves in an antiferromagnet using the intense magnetic field of ultrashort terahertz pulses.
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Capmany, J., Gasulla, I., & Sales, S. (2011). Microwave photonics: Harnessing slow light. Nat. Photon., 5(12), 731–733.
Abstract: Slow-light techniques originally conceived for buffering high-speed digital optical signals now look set to play an important role in providing broadband phase and true time delays for microwave signals.
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Williams, B. S. (2007). Terahertz quantum-cascade lasers. Nature Photonics, 1, 517–525.
Abstract: Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or more of continuous-wave coherent radiation throughout the terahertz range — the spectral regime between millimetre and infrared wavelengths, which has long resisted development. This paper reviews the state-of-the-art and future prospects for these lasers, including efforts to increase their operating temperatures, deliver higher output powers and emit longer wavelengths.
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Freer, E. M., Grachev, O., Duan, X., Martin, S., & Stumbo, D. P. (2010). High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat. Nanotech., 5(7), 525–530.
Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
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Kumar, S., Chan, C. W. I., Hu, Q., & Reno, J. L. (2011). A 1.8-THz quantum cascade laser operating significantly above the temperature of hw/k. Nature Physics, 7, 166–171.
Abstract: Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~planckω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9planckω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.
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Kumar, S., Wang I. Chan, C., Hu, Q., & Reno, J. L. (2011). A 1.8-THz quantum cascade laser operating significantly above the temperature of ω/kB. Nat. Phys., 7.
Abstract: Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~ω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9ω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.
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