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Shurakov, A.; Tong, Cheuk-yu E.; Grimes, P.; Blundell, R.; Golt'sman, G. |
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Title |
A microwave reflection readout scheme for hot electron bolometric direct detector |
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Journal Article |
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2015 |
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IEEE Trans. THz Sci. Technol. |
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IEEE Trans. THz Sci. Technol. |
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5 |
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81-84 |
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HEB detectors |
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In this paper, we propose and present data from a fast THz detector based on the repurpose of hot electron bolometer mixers (HEB) fabricated from superconducting NbN thinfilm. This detector is essentially a traditional NbN bolometer element that operates under the influence of a microwave pump. The in-jected microwave power serves the dual purpose of enhancing the detector sensitivity and reading out the impedance changes of the device in response to incidentTHz radiation. We have measured an optical Noise Equivalent Power of 4 pW/ Hz for our detector at a bath temperature of 4.2 K. The measurement frequency was 0.83 THz and the modulation frequency was 1.48 kHz. The readout
scheme is versatile and facilitates both high-speed operation as well as multi-pixel applications. |
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RPLAB @ atomics90 @ |
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950 |
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Dauler, E. A.; Kerman, A. J.; Robinson, B. S.; Yang, J. K. W.; Voronov, B. M.; Gol’tsman, G. N.; Berggren, K. K. |
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Title |
Achieving high counting rates in superconducting nanowire single-photon detectors |
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Conference Article |
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2006 |
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CLEO/QELS |
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CLEO/QELS |
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JTuD3 (1 to 2) |
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Keywords |
SSPD; SNSPD; Detectors; Photodetectors; Quantum optics; Quantum detectors; Photon counting; Photons; Pulse shaping; Quantum communications; Single photon detectors; Superconductors |
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Kinetic inductance is determined to be the primary limitation to the counting rate of superconducting nanowire single-photon counters. Approaches for overcoming this limitation will be discussed. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference and Photonic Applications Systems Technologies |
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1451 |
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Zhang, J.; Pearlman, A.; Slysz, W.; Verevkin, A.; Sobolewski, R.; Okunev, O.; Korneev, A.; Kouminov, P.; Smirnov, K.; Chulkova, G.; Gol’tsman, G. N.; Lo, W.; Wilsher, K. |
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Infrared picosecond superconducting single-photon detectors for CMOS circuit testing |
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2003 |
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CLEO/QELS |
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CLEO/QELS |
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Cmv4 |
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NbN SSPD; SNSPD; Infrared; Quantum detectors; Electron beam lithography; Infrared detectors; Infrared radiation; Quantum efficiency; Single photon detectors; Superconductors |
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Novel, NbN superconducting single-photon detectors have been developed for ultrafast, high quantum efficiency detection of single quanta of infrared radiation. Our devices have been successfully implemented in a commercial VLSI CMOS circuit testing system. |
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Optical Society of America |
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Conference on Lasers and Electro-Optics/Quantum Electronics and Laser Science Conference |
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1518 |
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Danerud, M.; Winkler, D.; Zorin, M.; Trifonov, V.; Karasik, B.; Gershenzon, E. M.; Gol'tsman, G. N.; Lindgren, M. |
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Title |
Picosecond detection of infrared radiation with YBa2Cu3O7-δ thin films |
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1993 |
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Proc. SPIE |
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Proc. SPIE |
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2104 |
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183-184 |
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YBCO HTS HEB detectors |
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Picosecond nonequilibrium and slow bolometric responses from a patterned high-Tc superconducting (HTS) film due toinfrared radiation were investigated using both modulation and pulse techniques. Measurements at A, = 0.85 [tm andA, = 10.6 lim have shown a similar behaviour of the response vs modulation frequency f. The responsivity of the HTS filmbased detector at f ..- 0.6-1 GHz is estimated to be 10-2 – 10-1 V/W. |
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Spie |
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Birch, J.R.; Parker, T.J. |
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18th International Conference on Infrared and Millimeter Waves |
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https://inis.iaea.org/search/searchsinglerecord.aspx?recordsFor=SingleRecord&RN=25034664 |
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10.1117/12.2298489 |
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1653 |
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Mitin, Vladimir; Antipov, Andrei; Sergeev, Andrei; Vagidov, Nizami; Eason, David; Strasser, Gottfried |
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Title |
Quantum Dot Infrared Photodetectors: Photoresponse Enhancement Due to Potential Barriers |
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2011 |
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Nanoscale Research Letters |
Abbreviated Journal |
Nanoscale res lett |
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6 |
Issue |
1 |
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6 |
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Keywords |
Quantum dots; Infrared detectors; Photoresponse; Doping; Potential barriers; Capture processes |
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Potential barriers around quantum dots (QDs) play a key role in kinetics of photoelectrons. These barriers are always created, when electrons from dopants outside QDs fill the dots. Potential barriers suppress the capture processes of photoelectrons and increase the photoresponse. To directly investigate the effect of potential barriers on photoelectron kinetics, we fabricated several QD structures with different positions of dopants and various levels of doping. The potential barriers as a function of doping and dopant positions have been determined using nextnano3 software. We experimentally investigated the photoresponse to IR radiation as a function of the radiation frequency and voltage bias. We also measured the dark current in these QD structures. Our investigations show that the photoresponse increases ~30 times as the height of potential barriers changes from 30 to 130 meV. |
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RPLAB @ gujma @ |
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712 |
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