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Author | Zinoni, C.; Alloing, B.; Li, L. H.; Marsili, F.; Fiore, A.; Lunghi, L.; Gerardino, A.; Vakhtomin, Y. B.; Smirnov, K. V.; Gol’tsman, G. N. | ||||
Title | Single-photon experiments at telecommunication wavelengths using nanowire superconducting detectors | Type | Journal Article | ||
Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 91 | Issue | 3 | Pages | 031106 (1 to 3) |
Keywords | SSPD, SNSPD, APD | ||||
Abstract | The authors report fiber-coupled superconducting single-photon detectors with specifications that exceed those of avalanche photodiodes, operating at telecommunication wavelength, in sensitivity, temporal resolution, and repetition frequency. The improved performance is demonstrated by measuring the intensity correlation function g(2)(τ) of single-photon states at 1300nm produced by single semiconductor quantum dots. This work was supported by Swiss National Foundation through the “Professeur borsier” and NCCR Quantum Photonics program, FP6 STREP “SINPHONIA” (Contract No. NMP4-CT-2005-16433), IP “QAP” (Contract No. 15848), NOE “ePIXnet,” and the Italian MIUR-FIRB program. |
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ISSN | 0003-6951 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Erratum: 1395 | Approved | no | ||
Call Number | Serial | 1396 | |||
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Author | Delacour, C.; Claudon, J.; Poizat, J.-Ph.; Pannetier, B.; Bouchiat, V.; de Lamaestre, R. Espiau; Villegier, J.-C.; Tarkhov, M.; Korneev, A.; Voronov, B.; Gol'tsman, G. | ||||
Title | Superconducting single photon detectors made by local oxidation with an atomic force microscope | Type | Journal Article | ||
Year | 2007 | Publication | Appl. Phys. Lett. | Abbreviated Journal | Appl. Phys. Lett. |
Volume | 90 | Issue | 19 | Pages | 191116 (1 t0 3) |
Keywords | SSPD | ||||
Abstract | The authors present a fabrication technique of superconducting single photon detectors made by local oxidation of niobium nitride ultrathin films. Narrow superconducting meander lines are obtained by direct writing of insulating niobium oxynitride lines through the films using voltage-biased tip of an atomic force microscope. Due to the 30nm resolution of the lithographic technique, the filling factor of the meander line can be made substantially higher than detector of similar geometry made by electron beam lithography, thus leading to increased quantum efficiency. Single photon detection regime of these devices is demonstrated at 4.2K. The authors thank J.-P. Maneval for stimulating discussions. This work has been partly supported by ACI Nanoscience from French Ministry of Research, D.G.A., by Grant No. 02.445.11.7434 of Russian Ministry of Education and Science, and by the European Commission under project “SINPHONIA,” Contract No. NMP4-CT-2005-16433. |
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ISSN | 0003-6951 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 423 | |||
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Author | Zhang, J.; Boiadjieva, N.; Chulkova, G.; Deslandes, H.; Gol'tsman, G. N.; Korneev, A.; Kouminov, P.; Leibowitz, M.; Lo, W.; Malinsky, R.; Okunev, O.; Pearlman, A.; Slysz, W.; Smirnov, K.; Tsao, C.; Verevkin, A.; Voronov, B.; Wilsher, K.; Sobolewski, R. | ||||
Title | Noninvasive CMOS circuit testing with NbN superconducting single-photon detectors | Type | Journal Article | ||
Year | 2003 | Publication | Electron. Lett. | Abbreviated Journal | Electron. Lett. |
Volume | 39 | Issue | 14 | Pages | 1086-1088 |
Keywords | NbN SSPD, SNSPD, applications | ||||
Abstract | The 3.5 nm thick-film, meander-structured NbN superconducting single-photon detectors have been implemented in the CMOS circuit-testing system based on the detection of near-infrared photon emission from switching transistors and have significantly improved the performance of the system. Photon emissions from both p- and n-MOS transistors have been observed. | ||||
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Series Volume | Series Issue | Edition | |||
ISSN | 0013-5194 | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1512 | |||
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Author | Heeres, R.W.; Dorenbos, S.N.; Koene, B.; Solomon, G.S.; Kouwenhoven, L.P.; Zwiller, V. | ||||
Title | On-Chip Single Plasmon Detection | Type | Journal Article | ||
Year | 2010 | Publication | Nano Letters | Abbreviated Journal | Nano Lett. |
Volume | 10 | Issue | Pages | 661-664 | |
Keywords | optical antennas; SSPD; Single surface plasmons; superconducting detectors; semiconductor quantum dots; nanophotonics | ||||
Abstract | Surface plasmon polaritons (plasmons) have the potential to interface electronic and optical devices. They could prove extremely useful for integrated quantum information processing. Here we demonstrate on-chip electrical detection of single plasmons propagating along gold waveguides. The plasmons are excited using the single-photon emission of an optically emitting quantum dot. After propagating for several micrometers, the plasmons are coupled to a superconducting detector in the near-field. Correlation measurements prove that single plasmons are being detected. | ||||
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Notes | Approved | no | |||
Call Number | RPLAB @ akorneev @ | Serial | 620 | ||
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Author | Korneev, A.; Minaeva, O.; Rubtsova, I.; Milostnaya, I.; Chulkova, G.; Voronov, B.; Smirnov, K.; Seleznev, V.; Gol'tsman, G.; Pearlman, A.; Slysz, W.; Cross, A.; Alvarez, P.; Verevkin, A.; Sobolewski, R. | ||||
Title | Superconducting single-photon ultrathin NbN film detector | Type | Journal Article | ||
Year | 2005 | Publication | Quantum Electronics | Abbreviated Journal | |
Volume | 35 | Issue | 8 | Pages | 698-700 |
Keywords | NbN SSPD, SNSPD | ||||
Abstract | Superconducting single-photon ultrathin NbN film detectors are studied. The development of manufacturing technology of detectors and the reduction of their operating temperature down to 2 K resulted in a considerable increase in their quantum efficiency, which reached in the visible region (at 0.56 μm) 30%—40%, i.e., achieved the limit determined by the absorption coefficient of the film. The quantum efficiency exponentially decreases with increasing wavelength, being equal to ~20% at 1.55 μm and ~0.02% at 5 μm. For the dark count rate of ~10-4s-1, the experimental equivalent noise power was 1.5×10-20 W Hz-1/2; it can be decreased in the future down to the record low value of 5×10-21 W Hz-1/2. The time resolution of the detector is 30 ps. | ||||
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Notes | Сверхпроводящий однофотонный детектор на основе ультратонкой пленки NbN | Approved | no | ||
Call Number | Serial | 383 | |||
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