Home | << 1 2 3 4 5 6 7 8 9 10 >> [11–20] |
Records | |||||
---|---|---|---|---|---|
Author | Елманова, А.; Елманов, И.; Комракова, С.; Голиков, А.; Джавадзадэ, Д.; Воробьёв, В.; Большедворский, С.; Сошенко, В.; Акимов, А.; Ковалюк, В.; Гольцман, Г. | ||||
Title | Способ интеграции наноалмазов с нанофотонными устройствами из нитрида кремния | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 309-311 | ||
Keywords | nanodiamonds, NV-centers | ||||
Abstract | В работе были разработаны оптические структуры из нитрида кремния для дальнейшего размещения на них наноалмазов с NV-центрами, опробованы различные методики нанесения раствора наноалмазов и выбрана оптимальная. Работа имеет практическое значение в области нанофотоники и создании квантово-оптических устройств с однофотонными источниками. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Duplicated as 1190 | Approved | no | ||
Call Number | Serial | 1285 | |||
Permanent link to this record | |||||
Author | Елманов, И. А.; Елманова, А. В.; Голиков, А. Д.; Комракова, С. А.; Каурова, Н. С.; Ковалюк, В. В.; Гольцман, Г. Н. | ||||
Title | Способ определения параметров резистов для электронной литографии фотонных интегральных схем на платформе нитрида кремния | Type | Conference Article | ||
Year | 2019 | Publication | Proc. IWQO | Abbreviated Journal | Proc. IWQO |
Volume | Issue | Pages | 306-308 | ||
Keywords | Si3N4, e-beam lithography, EBL | ||||
Abstract | В работе были измерены толщины резистов ZEP 520A и ma-N 2400 для электронно-лучевой литографии, неразрушающим способом, а также подобран рецепт, обеспечивающий высокое отношение скорости травления нитрида кремния по сравнению с резистом. Работа имеет практическое значение для электронной литографии интегрально-оптических устройств и устройств нанофотоники на основе нитрида кремния. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Duplicated as 1189 | Approved | no | ||
Call Number | Serial | 1284 | |||
Permanent link to this record | |||||
Author | Смирнов, Константин Владимирович; Чулкова, Галина Меркурьевна; Вахтомин, Юрий Борисович; Корнеев, Александр Александрович; Окунев, Олег Валерьевич; Дивочий, Александр Валерьевич; Семенов, Александр Владимирович; Гольцман, Григорий Наумович | ||||
Title | Особенности разогрева и релаксации горячих электронов О-754 в тонкопленочных cверхпроводниковых наноструктурах и 2D полупроводниковых гетероструктурах при поглощении излучения инфракрасного и терагерцового диапазонов | Type | Book Whole | ||
Year | 2014 | Publication | Abbreviated Journal | ||
Volume | Issue | Pages | |||
Keywords | 2DEG | ||||
Abstract | В монографии рассмотрены основные особенности эффекта электронного разогрева в тонких сверхпроводниковых пленках и полупроводниковых гетеропереходах, возникающего при поглощении носителями заряда излучений терагерцового и инфракрасного диапазонов. Значительная часть монографии посвящена представлению современных достижений при использовании указанного эффекта для создания приемных устройств с рекордными характеристиками: терагерцовых гетеродинных и болометрических приемников на основе сверхпроводниковых и полупроводниковых структур; сверхпроводниковых приемников одиночных ИК фотонов. В работе также подробно рассмотрены основы современной сверхпроводниковой тонкопленочной технологии. Монография может быть полезна студентам старших курсов, аспирантам и начинающим исследователям, работающим в области физики твердого тела, оптики, радиофизики. |
||||
Address | Москва | ||||
Corporate Author | Thesis | ||||
Publisher | МПГУ | Place of Publication | Editor | ||
Language | Russian | Summary Language | Original Title | ||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | 978-5-4263-0145-0 | Medium | ||
Area | Expedition | Conference | |||
Notes | 240 страниц | Approved | no | ||
Call Number | Serial | 1814 | |||
Permanent link to this record | |||||
Author | Гольцман, Г. Н.; Веревкин, А. А.; Гершензон, Е. М.; Птицина, Н. Г.; Смирнов, К. В.; Чулкова, Г. М. | ||||
Title | Исследования процессов неупругой релаксации и примесная спектроскопия-релаксометрия в двумерном электронном газе в полупроводниковых структурах с квантовыми ямами | Type | Report | ||
Year | 1995 | Publication | Abbreviated Journal | ||
Volume | Issue | Pages | |||
Keywords | |||||
Abstract | В гетероструктурах GaAs/AlGaAs впервые прямым методом измерена температурная зависимость вpемени энеpгетической pелаксации двумерного электронного газа te(T) в широком диапазоне температур Т=1,5 – 50 К в квазиравновесных условиях. Для измерений использовался высокочувствительный спектрометр миллиметрового диапазона волн с высоким временным разрешением, который позволял измерять релаксационные времена до 150 пс с погрешностью не более 20%. Верхний предел температуры определялся временным разрешением спектрометра. Исследования проводились на высококачественных образцах с поверхностной концентрацией носителей ns = 4,2 1011 см-2 и подвижностью m = 7 105 см2В-1с-1 (при Т = 4,2К). В квазиравновесных условиях из температурной зависимости tе определен предел подвижности при низких температурах (T<4.2 K), связанный с рассеянием на пьезоакустическом потенциале, получено время неупругой релаксации, связанное с рассеянием на деформационном потенциале (15 K25 K), получено характерное время испускания оптического фонона (tLO>4,5пс), которое существенно превышает время сронтанного излучения оптического фонона (примерно в 30 раз), что связано с большой ролью процессов перепоглащения фононов электронами.При низких температурах проведены измерения tе в условиях сильного разогрева. Полученные значения tе и зависимость tе от температуры электронов Те совпадают с tе(Т) в квазиравновесных условиях при Т=Те. Из полученных значений tе(Те) построена зависимость мощности энергетических потерь от Те, которая хорошо согласуется с литературными данными.Начаты измерения в магнитном поле, которые показывают переспективность использованного нами метода измерений как в области слабых магнитных полей при факторе заполнения >10, так и в области сильных магнитных полей при факторе заполнения >1-2. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Отчет о НИР/НИОКР; РФФИ: 95-02-06409-а; | Approved | no | ||
Call Number | Serial | 1831 | |||
Permanent link to this record | |||||
Author | Vasilev, D. D.; Malevannaya, E. I.; Moiseev, K. M.; Zolotov, P. I.; Antipov, A. V.; Vakhtomin, Y. B.; Smirnov, K. V. | ||||
Title | Influence of deposited material energy on superconducting properties of the WSi films | Type | Conference Article | ||
Year | 2020 | Publication | IOP Conf. Ser.: Mater. Sci. Eng. | Abbreviated Journal | IOP Conf. Ser.: Mater. Sci. Eng. |
Volume | 781 | Issue | Pages | 012013 (1 to 6) | |
Keywords | WSi SSPD, SNSPD | ||||
Abstract | WSi thin films have the advantages for creating SNSPDs with a large active area or array of detectors on a single substrate due to the amorphous structure. The superconducting properties of ultrathin WSi films substantially depends on their structure and thickness as the NbN films. Scientific groups investigating WSi films mainly focused only on changes of their thickness and the ratio of the components on the substrate at room temperature. This paper presents experiments to determine the effect of the bias potential on the substrate, the temperature of the substrate, and the peak power of pulsed magnetron sputtering, which is the equivalent of ionization, a tungsten target, on the surface resistance and superconducting properties of the WSi ultrathin films. The negative effect of the substrate temperature and the positive effect of the bias potential and the ionization coefficient (peak current) allow one to choose the best WSi films formation mode for SNSPD: substrate temperature 297 K, bias potential -60 V, and peak current 3.5 A. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | 1757-899X | ISBN | Medium | ||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1798 | |||
Permanent link to this record | |||||
Author | Kovalyuk, V.; Ferrari, S.; Kahl, O.; Semenov, A.; Lobanov, Y.; Shcherbatenko, M.; Korneev, A.; Pernice, W.; Goltsman, G. | ||||
Title | Waveguide integrated superconducting single-photon detector for on-chip quantum and spectral photonic application | Type | Conference Article | ||
Year | 2017 | Publication | J. Phys.: Conf. Ser. | Abbreviated Journal | J. Phys.: Conf. Ser. |
Volume | 917 | Issue | Pages | 062032 | |
Keywords | SSPD, SNSPD, waveguide | ||||
Abstract | With use of the travelling-wave geometry approach, integrated superconductor- nanophotonic devices based on silicon nitride nanophotonic waveguide with a superconducting NbN-nanowire suited on top of the waveguide were fabricated. NbN-nanowire was operated as a single-photon counting detector with up to 92 % on-chip detection efficiency in the coherent mode, serving as a highly sensitive IR heterodyne mixer with spectral resolution (f/df) greater than 106 in C-band at 1550 nm wavelength | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | RPLAB @ kovalyuk @ | Serial | 1140 | ||
Permanent link to this record | |||||
Author | Zolotov, P.; Divochiy, A.; Vakhtomin, Y.; Moshkova, M.; Morozov, P.; Seleznev, V.; Smirnov, K. | ||||
Title | Photon-number-resolving SSPDs with system detection efficiency over 50% at telecom range | Type | Conference Article | ||
Year | 2018 | Publication | Proc. AIP Conf. | Abbreviated Journal | |
Volume | 1936 | Issue | 1 | Pages | 020019 |
Keywords | NbN PNR SSPD, SNSPD | ||||
Abstract | We used technology of making high-efficiency superconducting single-photon detectors as a basis for improvement of photon-number-resolving devices. By adding optical cavity and using an improved NbN superconducting film, we enhanced previously reported system detection efficiency at telecom range for such detectors. Our results show that implementation of optical cavity helps to develop four-section device with quantum efficiency over 50% at 1.55 µm. Performed experimental studies of detecting multi-photon optical pulses showed irregularities over defining multi-photon through single-photon quantum efficiency. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | doi:10.1063/1.5025457 | Serial | 1231 | ||
Permanent link to this record | |||||
Author | Baselmans, J. J. A.; Hajenius, M.; Gao, J. R.; Baryshev, A.; Kooi, J.; Klapwijk, T. M.; de Korte, P. A. J.; Voronov, B.; Gol’tsman, G. | ||||
Title | Hot electron bolometer mixers with improved interfaces: sensitivity, LO power and stability | Type | Conference Article | ||
Year | 2004 | Publication | Proc. 15th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 15th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 17-24 | ||
Keywords | NbN HEB mixers | ||||
Abstract | We study twin slot antenna coupled NbN hot electron bolometer mixers with an improved contact structure and a small volume, ranging from 1 µm × 0.1 µm to 2 × 0.3 µm. We obtain a DSB receiver noise temperature of 900 K at 1.6 THz and 940 K at 1.9 THz. To explore the practical usability of such small HEB mixers we evaluate the LO power requirement, the sensitivity and the stability. We find that the LO power requirement of the smallest mixers is reduced to about 240 nW at the Si lens of the mixer. This value is larger than expected from the isothermal technique and the known losses in the lens by a factor of 3-3.5. The stability of these receivers is characterized using a measurement of the Allan Variance. We find an Allan time of 0.5 sec. in an 80 MHz bandwidth. A small increase in stability can be reached by using a higher bias at the expense of a significant amount of sensitivity. The stability is sufficient for spectroscopic applications in a 1 MHz bandwidth at a 1 Hz chopping frequency. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1491 | |||
Permanent link to this record | |||||
Author | Kuznetsov, K. A.; Kornienko, V. V.; Vakhtomin, Y. B.; Pentin, I. V.; Smirnov, K. V.; Kitaeva, G. K. | ||||
Title | Generation and detection of optical-terahertz biphotons via spontaneous parametric downconversion | Type | Conference Article | ||
Year | 2018 | Publication | Proc. ICLO | Abbreviated Journal | Proc. ICLO |
Volume | Issue | Pages | 303 | ||
Keywords | NbN HEB applications | ||||
Abstract | We study spontaneous parametric downconversion (SPDC) in the strongly non-degenerate regime when the idler wave hits the terahertz range. By using the hot-electron bolometer, for the first time the SPDC-generated idler-wave photons were directly detected in the terahertz frequency range. Spectrum of corresponding signal photons was measured using standard technique by the CCD camera. Possible applications of correlated optical-terahertz biphotons are discussed. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | International Conference Laser Optics | ||
Notes | Approved | no | |||
Call Number | Serial | 1806 | |||
Permanent link to this record | |||||
Author | Hajenius, M.; Baselmans, J. J. A.; Gao, J. R.; Klapwijk, T. M.; de Korte 2, P. A. J.; Voronov, B.; Gol’tsman, G. | ||||
Title | Increased bandwidth of NbN phonon cooled hot electron bolometer mixers | Type | Conference Article | ||
Year | 2004 | Publication | Proc. 15th Int. Symp. Space Terahertz Technol. | Abbreviated Journal | Proc. 15th Int. Symp. Space Terahertz Technol. |
Volume | Issue | Pages | 381-386 | ||
Keywords | NbN HEB mixers, IF bandwidth | ||||
Abstract | We study experimentally the IF gain bandwidth of NbN phonon-cooled hot-electron-bolometer (HEB) mixers for a set of devices with different contact structures but an identical NbN film. We observe that the IF bandwidth depends strongly on the exact contact structure and find an IF gain bandwidth of 6 GHz for a device with an additional superconducting layer (NbTiN) in between the active NbN film and the gold contact to the antenna. These results contradict the common opinion that the IF bandwidth is determined by the phonon-escape time between the NbN film and the substrate. Hence we calculate the IF gain bandwidth of a superconducting film using a two-temperature model. We find that the bandwidth increases strongly with operating temperature and is not limited by the phonon escape time. This is because of strong temperature dependence of the phonon specific heat in the NbN film. | ||||
Address | |||||
Corporate Author | Thesis | ||||
Publisher | Place of Publication | Editor | |||
Language | Summary Language | Original Title | |||
Series Editor | Series Title | Abbreviated Series Title | |||
Series Volume | Series Issue | Edition | |||
ISSN | ISBN | Medium | |||
Area | Expedition | Conference | |||
Notes | Approved | no | |||
Call Number | Serial | 1494 | |||
Permanent link to this record |