Schmidt, M. A. (2012). Integration: Fibres embrace optoelectronics. Nat. Photon., 6(3), 143–145.
Abstract: The demonstration of an in-fibre semiconductor photodetector with gigahertz bandwidth bodes well for the future development of hybrid fibre optoelectronics.
|
Yao, X. - C., Wang, T. - X., Xu, P., Lu, H., Pan, G. - S., Bao, X. - H., et al. (2012). Observation of eight-photon entanglement. Nat. Photon., 6(4), 225–228.
Abstract: The creation of increasingly large multipartite entangled states is not only a fundamental scientific endeavour in itself, but is also the enabling technology for quantum information. Tremendous experimental effort has been devoted to generating multiparticle entanglement with a growing number of qubits. So far, up to six spatially separated single photons have been entangled based on parametric downconversion. Multiple degrees of freedom of a single photon have been exploited to generate forms of hyper-entangled states. Here, using new ultra-bright sources of entangled photon pairs, an eight-photon interferometer and post-selection detection, we demonstrate for the first time the creation of an eight-photon Schrödinger cat state with genuine multipartite entanglement. The ability to control eight individual photons represents a step towards optical quantum computation, and will enable new experiments on, for example, quantum simulation, topological error correction and testing entanglement dynamics under decoherence.
|
Kawano, Y., & Ishibashi, K. (2008). An on-chip near-field terahertz probe and detector. Nature Photon, 2(10), 618–621.
Abstract: The advantageous properties of terahertz waves, such as their transmission through objects opaque to visible light, are attracting attention for imaging applications. A promising approach for achieving high spatial resolution is the use of near-field imaging. Although this method has been well established in the visible and microwave regions, it is challenging to perform in the terahertz region. In the terahertz techniques investigated to date, detectors have been located remotely from the probe, which degrades sensitivity, and the influence of far-field waves is unavoidable. Here we present a new integrated detection device for terahertz near-field imaging in which all the necessary detection components — an aperture, a probe and a terahertz detector — are integrated on one semiconductor chip, which is cryogenically cooled. This scheme allows highly sensitive, high-resolution detection of the evanescent field alone and promises new capabilities for high-resolution terahertz imaging.
|
Crespi, A., Ramponi, R., Osellame, R., Sansoni, L., Bongioanni, I., Sciarrino, F., et al. (2011). Integrated photonic quantum gates for polarization qubits. Nat. Comm., 2(566), 6.
Abstract: The ability to manipulate quantum states of light by integrated devices may open new perspectives both for fundamental tests of quantum mechanics and for novel technological applications. However, the technology for handling polarization-encoded qubits, the most commonly adopted approach, is still missing in quantum optical circuits. Here we demonstrate the first integrated photonic controlled-NOT (CNOT) gate for polarization-encoded qubits. This result has been enabled by the integration, based on femtosecond laser waveguide writing, of partially polarizing beam splitters on a glass chip. We characterize the logical truth table of the quantum gate demonstrating its high fidelity to the expected one. In addition, we show the ability of this gate to transform separable states into entangled ones and vice versa. Finally, the full accessibility of our device is exploited to carry out a complete characterization of the CNOT gate through a quantum process tomography.
|
Kono, J. (2011). Coherent terahertz control. Nat. Photon., 5, 5–6.
Abstract: Spin and charge terahertz excitations in solids are promising for implementing future technologies such as spintronics and quantum computation, but coherently controlling them has been a significant challenge. Researchers have now manipulated coherent spin waves in an antiferromagnet using the intense magnetic field of ultrashort terahertz pulses.
|
Capmany, J., Gasulla, I., & Sales, S. (2011). Microwave photonics: Harnessing slow light. Nat. Photon., 5(12), 731–733.
Abstract: Slow-light techniques originally conceived for buffering high-speed digital optical signals now look set to play an important role in providing broadband phase and true time delays for microwave signals.
|
Williams, B. S. (2007). Terahertz quantum-cascade lasers. Nature Photonics, 1, 517–525.
Abstract: Six years after their birth, terahertz quantum-cascade lasers can now deliver milliwatts or more of continuous-wave coherent radiation throughout the terahertz range — the spectral regime between millimetre and infrared wavelengths, which has long resisted development. This paper reviews the state-of-the-art and future prospects for these lasers, including efforts to increase their operating temperatures, deliver higher output powers and emit longer wavelengths.
|
Freer, E. M., Grachev, O., Duan, X., Martin, S., & Stumbo, D. P. (2010). High-yield self-limiting single-nanowire assembly with dielectrophoresis. Nat. Nanotech., 5(7), 525–530.
Abstract: Single-crystal nanowire transistors and other nanowire-based devices could have applications in large-area and flexible electronics if conventional top-down fabrication techniques can be integrated with high-precision bottom-up nanowire assembly. Here, we extend dielectrophoretic nanowire assembly to achieve a 98.5% yield of single nanowires assembled over 16,000 patterned electrode sites with submicrometre alignment precision. The balancing of surface, hydrodynamic and dielectrophoretic forces makes the self-assembly process controllable, and a hydrodynamic force component makes it self-limiting. Our approach represents a methodology to quantify nanowire assembly, and makes single nanowire assembly possible over an area limited only by the ability to reproduce process conditions uniformly.
|
Kumar, S., Chan, C. W. I., Hu, Q., & Reno, J. L. (2011). A 1.8-THz quantum cascade laser operating significantly above the temperature of hw/k. Nature Physics, 7, 166–171.
Abstract: Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~planckω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9planckω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.
|
Kumar, S., Wang I. Chan, C., Hu, Q., & Reno, J. L. (2011). A 1.8-THz quantum cascade laser operating significantly above the temperature of ω/kB. Nat. Phys., 7.
Abstract: Several competing technologies continue to advance the field of terahertz science; of particular importance has been the development of a terahertz semiconductor quantum cascade laser (QCL), which is arguably the only solid-state terahertz source with average optical power levels of much greater than a milliwatt. Terahertz QCLs are required to be cryogenically cooled and improvement of their temperature performance is the single most important research goal in the field. Thus far, their maximum operating temperature has been empirically limited to ~ω/kB, a largely inexplicable trend that has bred speculation that a room-temperature terahertz QCL may not be possible in materials used at present. Here, we argue that this behaviour is an indirect consequence of the resonant-tunnelling injection mechanism employed in all previously reported terahertz QCLs. We demonstrate a new scattering-assisted injection scheme to surpass this limit for a 1.8-THz QCL that operates up to ~1.9ω/kB (163 K). Peak optical power in excess of 2 mW was detected from the laser at 155 K. This development should make QCL technology attractive for applications below 2 THz, and initiate new design strategies for realizing a room-temperature terahertz semiconductor laser.
|
