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Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. |
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Title |
Performance of NbN lattice‐cooled hot‐electron bolometric mixers |
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Journal Article |
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Year |
1996 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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80 |
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7 |
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4232-4234 |
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Keywords |
NbN HEB mixers |
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Abstract  |
The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity. |
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0021-8979 |
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1607 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
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High resolution THz gas spectrometer based on semiconductor and superconductor devices |
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Conference Article |
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2017 |
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EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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132 |
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02001 (1 to 2) |
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Keywords |
NbN HEB mixers, detectors, THz spectroscopy |
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The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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1328 |
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Aksaev, E. E.; Gershenzon, E.M.; Gol'tsman, G. N.; Mirskij, G. I.; Semenov, A. D. |
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Title |
Submillimetric spectrometer-relaxometer based on backward-wave tubes with picosecond time resolution |
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Journal Article |
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1991 |
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Pribory i Tekhnika Eksperimenta |
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Pribory i Tekhnika Eksperimenta |
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34 |
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2 |
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125-131 |
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BWO, applications |
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The high-sensitive automatic spectrometer-relaxometer based on backward-wave tubes in the range of 4÷0.25 mm was described permitting to study the response kinetics of sample under investigation in any point of this range with the resolution time of 10-11 s. The relaxation measurements were conducted using oscillation beats of two adequate tubes, the frequency of one of them was fixed, while that of the other one was changeable. The amplitude-frequency characteristic of the response under the conditions of synchronous reception was recorded at beat frequency variation from 107 to 1010 Hz. The high sensitivity was reached by decreasing the device recording band down to 100 Hz in the whole measuring range. |
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0032-8162 |
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1683 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
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Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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2001 |
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Jetp Lett. |
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Jetp Lett. |
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73 |
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1 |
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44-47 |
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Keywords |
uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
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Title |
Technology for NbN HEB based multipixel matrix of THz range |
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Conference Article |
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2018 |
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EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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195 |
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05011 |
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Keywords |
NbN HEB |
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Abstract |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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