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Ovchinnikov, O. V.; Perepelitsa, A. S.; Smirnov, M. S.; Latyshev, A. N.; Grevtseva, I. G.; Vasiliev, R. B.; Goltsman, G. N.; Vitukhnovsky, A. G. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Luminescence of colloidal Ag2S/ZnS core/shell quantum dots capped with thioglycolic acid |
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Journal Article |
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Year |
2020 |
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J. Luminescence |
Abbreviated Journal |
J. Luminescence |
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220 |
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117008 (1 to 7) |
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Ag2S QD, quantum dots |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The features of IR luminescence of colloidal AgS QDs passivated with thioglycolic acid (AgS/TGA) under the formation of AgS/ZnS/TGA core/shell QDs are considered. A 4.5-fold increase in the quantum yield of recombination IR luminescence within the band with a peak at 960 nm (1.29 eV), full width at half maximum of 250 nm (0.34 eV), and the Stokes shift with respect to the exciton absorption of 0.6 eV was found. The increase in the IR luminescence intensity of AgS/ZnS/TGA QDs is accompanied by an increase in the average luminescence lifetime from 2.9 ns to 14.3 ns, which is explained as “healing” of surface trap states during the formation of the ZnS shell. For the first time, the enhancement of the luminescence intensity photodegradation (hereinafter referred to as fatigue) was found during the formation of the AgS/ZnS/TGA core/shell QDs. The luminescence fatigue is irreversible. We conclude that the initial stage of photolysis of the AgS core QDs under laser irradiation plays a key role. Low-atomic photolytic clusters of silver formed on the AgS core QDs act as luminescence quenching centers and do not reveal structural transformations into AgS, provided that the clusters are not in contact with TGA. |
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0022-2313 |
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1267 |
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Cherednichenko, S.; Drakinskiy, V.; Baubert, J.; Krieg, J.-M.; Voronov, B.; Gol'tsman, G.; Desmaris, V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Gain bandwidth of NbN hot-electron bolometer terahertz mixers on 1.5 μm Si3N4 / SiO2 membranes |
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Journal Article |
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2007 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
101 |
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12 |
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124508 (1 to 6) |
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HEB, mixer, membrane |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The gain bandwidth of NbN hot-electron bolometer terahertz mixers on electrically thin Si3N4/SiO2 membranes was experimentally investigated and compared with that of HEB mixers on bulk substrates. A gain bandwidth of 3.5 GHz is achieved on bulk silicon, whereas the gain bandwidth is reduced down to 0.6–0.9 GHz for mixers on 1.5 μm Si3N4/SiO2 membranes. We show that application of a MgO buffer layer on the membrane extends the gain bandwidth to 3 GHz. The experimental data were analyzed using the film-substrate acoustic mismatch approach. |
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0021-8979 |
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560 |
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Gershenzon, E. M.; Gershenson, M. E.; Goltsman, G. N.; Karasik, B. S.; Lyulkin, A. M.; Semenov, A. D. |
![find record details (via OpenURL) openurl](img/xref.gif)
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Title |
Fast-response superconducting electron bolometer |
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Journal Article |
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1989 |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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Pisma v Zhurnal Tekhnicheskoi Fiziki |
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15 |
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3 |
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88-92 |
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Nb HEB |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The general design, operation, and performance characteristics of fast-response electronic bolometers using a thin superconducting Nb film on a leucosapphire substrate are briefly reviewed. The volt-watt sensitivity of the bolometrs is 2,000-200,000 V/W, the operating temperature is 1.6 K, and the time constant is 4-4.5 ns. |
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Russian |
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1694 |
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Author |
Gol’tsman, G. N. |
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Title |
The “Millimetron” project, a future space telescope mission |
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Abstract |
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2007 |
Publication |
Proc. 18th Int. Symp. Space Terahertz Technol. |
Abbreviated Journal |
Proc. 18th Int. Symp. Space Terahertz Technol. |
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255 |
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Millimetron space observatory, VLBI |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The goal of the Millimetron project is to develop a space observatory operating in the millimeter, sub-millimeter and infrared wavelength ranges using a 12-m actively cooled telescope in a single-dish mode and as an interferometer with the space-ground and space-space baselines (the later after the launch of the second identical space telescope). The Millimetron’s main reflector and other optics will be cooled down to 4K thus enabling astronomical observations with super high sensitivity in MM and subMM (down to nanoJansky level). Heterodyne observations in an interferometer mode at frequencies 0.1-1 THz will provide super high angular resolution. The main instruments, planned to be installed are wide-range imaging arrays, radiometers with spectrometers and polarimeters, VLBI heterodyne receivers, and Mikelson type interferometer devices. Wide-range MM and subMM imaging arrays and spectrometers will be based on a superconducting hot electron direct detectors with Andreev mirrors operating at 0.1 K. Such detectors are the best candidates to reach the noise equivalent power level of 10 -19 -10 -20 W/√Hz. Heterodyne receivers will be both SIS based superconducting integrated receiver with flux-flow oscillator as LO (0.1-0.9 THz range) and HEB based receivers using multiplied Gunn oscillator as LO for 1-2 THz range and quantum cascade lasers as LO for 2-5 THz range. For observations in middle IR region there will be installed large arrays of superconducting single photon detectors, providing imaging with very high dynamic range and ultimate sensitivity. |
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1422 |
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Kawamura, J.; Blundell, R.; Tong, C.‐yu E.; Gol’tsman, G.; Gershenzon, E.; Voronov, B. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Performance of NbN lattice‐cooled hot‐electron bolometric mixers |
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Journal Article |
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Year |
1996 |
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J. Appl. Phys. |
Abbreviated Journal |
J. Appl. Phys. |
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Volume |
80 |
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7 |
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4232-4234 |
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NbN HEB mixers |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The heterodyne performance of lattice‐cooled hot‐electron bolometric mixers is measured at 200 GHz. Superconducting thin‐film niobium nitride strips with ∼5 nm thickness are used as waveguide mixer elements. A double‐sideband receiver noise temperature of 750 K at 244 GHz is measured at an intermediate frequency centered at 1.5 GHz with 500 MHz bandwidth and with 4.2 K device temperature. The instantaneous bandwidth for this mixer is 1.6 GHz. The local oscillator power required by the mixer is about 0.5 μW. The mixer is linear to within 1 dB up to an input power level 6 dB below the local oscillator power. A receiver incorporating a hot‐electron bolometric mixer was used to detect molecular line emission in a laboratory gascell. This experiment unambiguously confirms that the receiver noise temperature determined from Y‐factor measurements reflects the true heterodyne sensitivity. |
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0021-8979 |
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1607 |
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Anfertev, V.; Vaks, V.; Revin, L.; Pentin, I.; Tretyakov, I.; Goltsman, G.; Vinogradov, E. A.; Naumov, A. V.; Gladush, M. G.; Karimullin, K. R. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
High resolution THz gas spectrometer based on semiconductor and superconductor devices |
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Conference Article |
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2017 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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132 |
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02001 (1 to 2) |
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NbN HEB mixers, detectors, THz spectroscopy |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The high resolution THz gas spectrometer consists of a synthesizer based on Gunn generator with a semiconductor superlattice frequency multiplier as a radiation source, and an NbN hot electron bolometer in a direct detection mode as a THz radiation receiver was presented. The possibility of application of a quantum cascade laser as a local oscillator for a heterodyne receiver which is based on an NbN hot electron bolometer mixer is shown. The ways for further developing of the THz spectroscopy were outlined. |
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2100-014X |
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1328 |
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Aksaev, E. E.; Gershenzon, E.M.; Gol'tsman, G. N.; Mirskij, G. I.; Semenov, A. D. |
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Title |
Submillimetric spectrometer-relaxometer based on backward-wave tubes with picosecond time resolution |
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Journal Article |
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1991 |
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Pribory i Tekhnika Eksperimenta |
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Pribory i Tekhnika Eksperimenta |
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34 |
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2 |
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125-131 |
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BWO, applications |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The high-sensitive automatic spectrometer-relaxometer based on backward-wave tubes in the range of 4÷0.25 mm was described permitting to study the response kinetics of sample under investigation in any point of this range with the resolution time of 10-11 s. The relaxation measurements were conducted using oscillation beats of two adequate tubes, the frequency of one of them was fixed, while that of the other one was changeable. The amplitude-frequency characteristic of the response under the conditions of synchronous reception was recorded at beat frequency variation from 107 to 1010 Hz. The high sensitivity was reached by decreasing the device recording band down to 100 Hz in the whole measuring range. |
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0032-8162 |
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1683 |
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Mel’nikov, A. P.; Gurvich, Y. A.; Shestakov, L. N.; Gershenzon, E. M. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Magnetic field effects on the nonohmic impurity conduction of uncompensated crystalline silicon |
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Journal Article |
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Year |
2001 |
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Jetp Lett. |
Abbreviated Journal |
Jetp Lett. |
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Volume |
73 |
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1 |
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44-47 |
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uncompensated crystalline silicon, nonohmic impurity conduction, magnetic field |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The impurity conduction of a series of crystalline silicon samples with the concentration of major impurity N ≈ 3 × 1016 cm−3 and with a varied, but very small, compensation K was measured as a function of the electric field E in various magnetic fields H-σ(H, E). It was found that, at K < 10−3 and in moderate E, where these samples are characterized by a negative nonohmicity (dσ(0, E)/dE < 0), the ratio σ(H, E)/σ(0, E) > 1 (negative magnetoresistance). With increasing E, these inequalities are simultaneously reversed (positive nonohmicity and positive magnetoresistance). It is suggested that both negative and positive nonohmicities are due to electron transitions in electric fields from impurity ground states to states in the Mott-Hubbard gap. |
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0021-3640 |
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1752 |
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Tretyakov, I.; Kaurova, N.; Raybchun, S.; Goltsman, G. N.; Silaev, A. A. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Technology for NbN HEB based multipixel matrix of THz range |
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Conference Article |
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Year |
2018 |
Publication |
EPJ Web Conf. |
Abbreviated Journal |
EPJ Web Conf. |
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Volume |
195 |
Issue |
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Pages |
05011 |
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NbN HEB |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The influence of homogeneity disorder degree of the thin superconducting NbN film across of Si wafer on characteristics of the Hot Electron Bolometers (HEB) has been investigated. Our experiments have been carried out near the superconducting transition and far below it. The high homogeneity disorder degree of the NbN film has been achieved by preparing the Si substrate surface. The fabricated HEBs all have almost identical R (T) characteristics with a dispersion of Tc and the normal resistance R300 of not more than 0.15K and 2 Ω, respectively. The quality of the devises allows us to demonstrate clearly the influence of non-equilibrium processes in the S’SS’ system on the device performance. Our fabrication technology also allows creating multiplex heterodyne and direct detector matrices based the HEB devices. |
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2100-014X |
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1318 |
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Nikogosyan, A. S.; Martirosyan, R. M.; Hakhoumian, A. A.; Makaryan, A. H.; Tadevosyan, V. R.; Goltsman, G. N.; Antipov, S. V. |
![goto web page (via DOI) doi](img/doi.gif)
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Title |
Effect of absorption on the efficiency of terahertz radiation generation in the metal waveguide partially filled with nonlinear crystal LiNbO3, DAST or ZnTe |
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Journal Article |
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2019 |
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J. Contemp. Phys. |
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J. Contemp. Phys. |
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54 |
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1 |
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97-104 |
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nonlinear crystal, THz, waveguide |
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Abstract ![sorted by Abstract field, ascending order (up)](img/sort_asc.gif) |
The influence of terahertz (THz) radiation absorption on the efficiency of generation of coherent THz radiation in the system ‘nonlinear-optical crystal partially filling the cross section of a rectangular metal waveguide’ has been investigated. The efficiency of the nonlinear frequency conversion of optical laser radiation to the THz range depends on the loss in the system and the fulfillment of the phase-matching (FM) condition in a nonlinear crystal. The method of partially filling of a metal waveguide with a nonlinear optical crystal is used to ensure phase matching. The phase matching is achieved by numerical determination of the thickness of the nonlinear crystal, that is the degree of partial filling of the waveguide. The attenuation of THz radiation caused by losses both in the metal walls of the waveguide and in the crystal was studied, taking into account the dimension of the cross section of the waveguide, the degree of partial filling, and the dielectric constant of the crystal. It is shown that the partial filling of the waveguide with a nonlinear crystal results in an increase in the efficiency of generation of THz radiation by an order of magnitude, owing to the decrease in absorption. |
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1068-3372 |
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